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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC / Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Seung Yong Lee, Chang Goo Kang, Hyunsang Hwang, and Byoung Hun Lee / Applied Physics Letters 99 (8), art. no. 082111 (2011.08.22) 


Thermally Assisted Resistive Switching in Pr​0.7Ca​0.3MnO​3/Ti/Ge​2Sb​2Te​5 Stack for Nonvolatile Memory Applications / Manzar Siddik, Seungjae Jung, Jubong Park, Wootae Lee, Seonghyun Kim, Joonmyoung Lee, Jungho Shin, Sangsu Park, Daeseok Lee, Insung Kim, Hyunsang Hwang / Applied Physics Letters 99, 063501 (2011.08.08) 


Forming-free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio / Seonghyun Kim, Minseok Jo, Jubong Park, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 14 (8), pp. H322-H325 (2011.08) 


Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO​2/W devices for cross-point application / Kuyyadi P. Biju, Xinjun Liu, Jungho Shin, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Alex Ignatiev, Hyunsang Hwang / Current Applied Physics 11 (4 SUPPL.), pp. S102-S106 (2011.07) 


Low temperature solution-processed graphene oxide/Pr​0.7Ca​0.3MnO​3 based resistive-memory device / Insung Kim, Manzar Siddik, Jungho Shin, Kuyyadi P Biju, Seungjae Jung, Hyunsang Hwang / Applied Physics Letters 99, 042101 (2011.07.25) 


Estimation of Interfacial Fixed Charge at Al​2O​3/SiO​2 Using Slant-Etched Wafer for Solar Cell Application / Youngkyoung Ahn, Sakeb Hasan Choudhury, Daeseok Lee, Sharif Md. Sadaf, Manzar Siddik, Minseok Jo, Hyunsang Hwang, Sungeun Park, Young Do Kim, Dong Hwan Kim / Japanese Journal of Applied Physics 50 (7 PART 1), art. no. 071503 (2011.07) 


Effect of program/erase speed on switching uniformity in filament-engine RRAM / Jungho Shin, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Wootae Lee, Insung Kim, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters 32 (7), pp. 958-960 (2011.07) 


Noise analysis based model of filamentary switching ReRAM with ZrO​x/HfO​x stacks / Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Manzar Siddik, and Hyunsang Hwang / IEEE Electron Device Letters 32(7), pp. 964-966 (2011.07) 


Resistive switching characteristics of solution-processed TiO​x for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, b, c, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Microelectronic Engineering 88 (7), pp. 1143-1147 (2011.07) 


Resistive Switching Characteristics of Ultra-thin TiO​x / Jubong Park, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp.1136-1139 (2011.07) 


Materials and Process Aspect of Cross-point RRAM / Joonmyoung Lee, Minseok Jo, Dong-jun Seong, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp. 1113-1118 (2011.07) 


Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device / Kyungah Seo, Insung Kim, Seungjae Jung, Minseok Jo, Sangsu Park, Jubong Park, Jungho Shin, Kuyyadi P Biju, Jaemin Kong, Kwanghee Lee, Byounghun Lee, Hyunsang Hwang / Nanotechnology 22 (25), art. no. 254023 (2011.06.24) 


Improved switching uniformity of a Carbon-based conductive-bridge engine ReRAM by controlling the size of conducting filament / Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (6), pp. 935-938 (2011.06) 


Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications / Wootae Lee, Jubong Park, Myungwoo Son, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device Letters 32 (5), pp. 680-682 (2011.05) 


Effect of Scaling WO​x-based RRAMs on their Resistive Switching Characteristics / Seonghyun Kim, Kuyyadi P. Biju, Minseok Jo, Seungjae Jung, Jubong Park, Joonmyoung Lee, Wootae Lee, Jungho Shin, Sangsu Park, Hyunsang Hwang / IEEE Electron Device 32 (5), pp. 671-673 (2011.05) 


Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr​0.52Ti​0.48)O​3/Pr​0.7Ca​0.3MnO​3 Heterostructure Resistive Memory / El Mostafa Bourim, Sangsoo Park, Xinjun Liu, Kuyyadi P. Biju, Hyunsang Hwang, Alex Ignatiev / Electrochemical and Solid-State Letters 14 (5), pp. H225-H228 (2011.05) 


Multi-Bit Operation of TiO​x-based ReRAM by Schottky Barrier Height Engineering / Jubong Park; Biju, K.P.; Seungjae Jung; Wootae Lee; Joonmyoung Lee; Seonghyun Kim; Sangsu Park; Jungho Shin; Hyunsang Hwang / IEEE Electron Device Letters 32 (4), art. no. 5723688, pp. 476-478 (2011.04) 


Improved Resistive Switching Properties of Solution-Processed TiO​x Film by Incorporating Atomic Layer Deposited TiO​2 layer / Insung Kim, Seungjae Jung, Jungho Shin, Kuyyadi P. Biju, Kyungah Seo, Manzar Siddik, Xinjun Liu, Jaemin Kong, Kwanghee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics 50 (2011), 046504 (2011.04) 


Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer  / Doo-In Kim, Jaesik Yoon, Ju-Bong Park, Hyunsang Hwang, Young Moon Kim, Se Hun Kwon, Kwang Ho Kim  / Applied Physics Letters 98 (15), art. no. 152107 (2011.04.11) 


Improved resistive switching properties in Pt/Pr​0.7Ca​0.3MnO​3/Y​2O​3-stabilized ZrO​2/W via-hole structures / Xinjun Liu, Kuyyadi P. Biju, Sangsu Park, Insung Kim, Manzar Siddik, Sharif Sadaf, Hyunsang Hwang / Current Applied Physics Volume 11, Issue 2, Supplement 1, pp. e58-e61 (2011.03)