Semiconductor Integrated Device & Process Lab.

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Journals

208

Resistive switching characteristics of solution-processed TiO​x for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, b, c, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Microelectronic Engineering 88 (7), pp. 1143-1147 (2011.07) 

207

Resistive Switching Characteristics of Ultra-thin TiO​x / Jubong Park, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp.1136-1139 (2011.07) 

206

Materials and Process Aspect of Cross-point RRAM / Joonmyoung Lee, Minseok Jo, Dong-jun Seong, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp. 1113-1118 (2011.07) 

205

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device / Kyungah Seo, Insung Kim, Seungjae Jung, Minseok Jo, Sangsu Park, Jubong Park, Jungho Shin, Kuyyadi P Biju, Jaemin Kong, Kwanghee Lee, Byounghun Lee, Hyunsang Hwang / Nanotechnology 22 (25), art. no. 254023 (2011.06.24) 

204

Improved switching uniformity of a Carbon-based conductive-bridge engine ReRAM by controlling the size of conducting filament / Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (6), pp. 935-938 (2011.06) 

203

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications / Wootae Lee, Jubong Park, Myungwoo Son, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device Letters 32 (5), pp. 680-682 (2011.05) 

202

Effect of Scaling WO​x-based RRAMs on their Resistive Switching Characteristics / Seonghyun Kim, Kuyyadi P. Biju, Minseok Jo, Seungjae Jung, Jubong Park, Joonmyoung Lee, Wootae Lee, Jungho Shin, Sangsu Park, Hyunsang Hwang / IEEE Electron Device 32 (5), pp. 671-673 (2011.05) 

201

Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr​0.52Ti​0.48)O​3/Pr​0.7Ca​0.3MnO​3 Heterostructure Resistive Memory / El Mostafa Bourim, Sangsoo Park, Xinjun Liu, Kuyyadi P. Biju, Hyunsang Hwang, Alex Ignatiev / Electrochemical and Solid-State Letters 14 (5), pp. H225-H228 (2011.05) 

200

Multi-Bit Operation of TiO​x-based ReRAM by Schottky Barrier Height Engineering / Jubong Park; Biju, K.P.; Seungjae Jung; Wootae Lee; Joonmyoung Lee; Seonghyun Kim; Sangsu Park; Jungho Shin; Hyunsang Hwang / IEEE Electron Device Letters 32 (4), art. no. 5723688, pp. 476-478 (2011.04) 

199

Improved Resistive Switching Properties of Solution-Processed TiO​x Film by Incorporating Atomic Layer Deposited TiO​2 layer / Insung Kim, Seungjae Jung, Jungho Shin, Kuyyadi P. Biju, Kyungah Seo, Manzar Siddik, Xinjun Liu, Jaemin Kong, Kwanghee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics 50 (2011), 046504 (2011.04) 

198

Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer  / Doo-In Kim, Jaesik Yoon, Ju-Bong Park, Hyunsang Hwang, Young Moon Kim, Se Hun Kwon, Kwang Ho Kim  / Applied Physics Letters 98 (15), art. no. 152107 (2011.04.11) 

197

Improved resistive switching properties in Pt/Pr​0.7Ca​0.3MnO​3/Y​2O​3-stabilized ZrO​2/W via-hole structures / Xinjun Liu, Kuyyadi P. Biju, Sangsu Park, Insung Kim, Manzar Siddik, Sharif Sadaf, Hyunsang Hwang / Current Applied Physics Volume 11, Issue 2, Supplement 1, pp. e58-e61 (2011.03) 

196

Bipolar resistance switching in the Pt/WO​x/W nonvolatile memory devices / Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Manzar Siddik, Jungho Shin, Joonmyoung Lee and Hyunsang Hwang / Current Applied Physics Volume 11, Issue 2, Supplement 1, March 2011, pp. e62-e65 (2011.03)

195

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors / Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Rino Choi, Un Ki Kim, Cheol Seong Hwang, Daeseok Lee, Hyungsang Hwang,Jae Kyeong Jeong  / Applied Physics Letters 98 (10), art. no. 103509 (2011.03.07) 

194

Coexistence of filamentary and homogeneous resistive switching in graded WO​x thin films / Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Seungjae Jung, Jubong Park, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters 5 (3), pp. 89-91 (2011.03)

193

New set/reset scheme for excellent uniformity in bipolar resistive memory  / Jubong Park, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device 32 (3), art. no. 5680582, pp. 228-230  (2011.03) 

192

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels  / Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, Hyunsang Hwang / Microelectronic Engineering 88 (3), pp. 273-275 (2011.03) 

191

TiO​2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application  / Jungho Shin, Insung Kim, Kuyyadi P. Biju, Minseok Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Hyunsang Hwang / Journal of Applied Physics 109  (3), art. no. 033712 (2011.02.01) 

190

Nonvolatile resistive switching in Pr​0.7Ca​0.3MnO​3 devices using multilayer graphene electrodes / Wootae Lee, Gunho Jo, Sangchul Lee, Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jungho Shin, Sangsu Park, Takhee Lee, Hyunsang Hwang / Applied Physics Letters 98 (3), art. no. 032105 (2011.01.17) 

189

Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons / Jongwon Yoon, Woong-Ki Hong, Minseok Jo, Gunho Jo, Minhyeok Choe, Woojin Park, Jung Inn Sohn, Stanko Nedic, Hyungsang Hwang, Mark E. Welland, and Takhee Lee / ACS nano 5 (1), pp. 558-564  (2011.01)