Understanding of the Abrupt Resistive Transition in Different types of Threshold Switching Devices from Materials Perspective / Sangmin Lee , Jongmyung Yoo , Jaehyuk Park , Hyunsang Hwang / IEEE Transactions on Electron Devices 67(7),9115221, pp. 2878-2883 (202007) 

Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device ​/ Changhyuck Sung, Seokjae Lim, Hyunsang Hwang / IEEE Electron Device Letters 41(5),9027923, pp. 713-716​ (202005)

Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity / Jongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, Myonghoon Kwak, Hyunsang Hwang ​/ Nanotechnology 31(23), pp. 235203 (202003)

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, Krishn Gopal Rajput, Hyunsang Hwang ​/ Advanced Electronic Materials​ 6(2),1901100​ (202002)

Engineering of defects in resistive random access memory devices /  Writam Banerjee,  Qi Liu, and  Hyunsang Hwang / Journal of Applied Physics 127(5),051101 (202002) 

Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices /  Writam Banerjee, Hyunsang Hwang / Applied Physics Letters 116(5),053502 (202002) 

Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions / Jongmyung Yoo, Ilya Karpov, Sangmin Lee, Jaimyun Jung, Hyoung Seop Kim, Hyunsang Hwang / IEEE Electron Device Letters 41(1),8924678, pp. 191-194 (202001)