Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation / Dongmin Kim, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Pendar Azaripour Masouleh, Jisung Lee, Joonhyun Kwon, Chul-Heung Kim, Hyunsang Hwang / Advanced Electronic Materials, 11, 2400881 (202505) 

Vertical-Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas / Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang / Advanced Electronic Materials, 11(7), 2400650 (202505) 

Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure / H Jang, A Kashir, S Oh, H Hwang / Nanotechnology 33 (39), 395205

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device ​/ Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang​ / Nanotechnology 32(31),315712 (202105)​

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing​ / Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),21000142 (202105)​​

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Hyunsang Hwang / Nanotechnology​​ 32(27),275201 (202104)

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices​ / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Donghwa Lee, Hyunsang Hwang​ / Advanced Electronic Materials​​ ​7(4), 2100022 (202104)

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications  / Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters 6(11), pp.454-456 (201211) 

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice  / Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Manzar Siddik, Eujun Cha, and Hyunsang Hwang / IEEE Electron Device Letters  33 (4), pp.600-602 (201204) 

Programmable analogue circuits with multilevel memristive device / S. Park, J. Park, S. Kim, W. Lee, B.H. Lee and H. Hwang / Electronics Letters 48(22), pp.1415-1417 (201210)

Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment / Taehyeon Kwon, Woojin Park , Minhyeok Choe, Jongwon Yoon, Sangsu Park, Sangchul Lee, Hyunsang Hwang, and Takhee Lee / Japanese Joural of Applied Physics 51,035001 (201203) 

High Current Density and Nonlinearity Combination of Selection Device Based on TaO_X/TiO₂/TaO_X Structure for One Selector-One Resistor Arrays / Wootae Lee, Jubong Park, Seonghyun Kim, Jiyong Woo, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Euijun Cha, Byoung Hun Lee, and Hyunsang Hwang / ACS Nano 6(9), pp.8166–8172 (201209) 

Improvement of resistive switching uniformity by introducing a thin NbO_x interface layer / Xinjun Liu, Sharif Md. Sadaf, Seonghyun Kim, Kuyyadi P. Biju, Xun Cao, Myungwoo Son, Sakeb Hasan Choudhury, Gun-Young Jung and Hyunsang Hwang / ECS Solid State Letters 1(5), pp. Q35-Q38 (201208)

Defect engineering: Reduction effect of hydrogen atom impurities in HfO₂-based resistive-switching memory devices  / Seonghyun Kim, Daeseok Lee, Jubong Park, Seungjae Jung, Wootae Lee, Jungho Shin, Jiyong Woo, Godeuni Choi and Hyunsang Hwang / Nanotechnology 23(32) 325702 (201208) 

​A study of the leakage current in TiN/HfO₂/TiN capacitors / S. Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters, B.H. Lee, H. Hwang, and L. Pantisano / Microelectronic Engineering 95, pp.71-73 (201207) 

​In-depth Study on the Effect of Active Area Scale-down of Solution-processed TiO_x / Seungjae Jung, Jaemin Kong, Tae-Wook Kim, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, and Sanghun Jeon / IEEE Electron Device Letters 33(6) 6186770, pp.869-871 (201206) 

Highly Uniform and Reliable Resistance Switching Properties in Bilayer WO_x/NbO_x RRAM Devices  / Sharif Md. Sadaf, Xinjun Liu, Myungwoo Son, Sangsu Park, Sakeb H. Choudhury, Euijun Cha, Manzar Siddik, Jungho Shin, and Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials Science 209(6), pp.1179-1183 (201206)

MIM-type cell selector for high-density and low-power cross-point memory application / Jungho Shin, Godeuni Choi, Jiyong Woo, Jubong Park, Sangsu Park, Wootae Lee, Seonghyun Kim, Myungwoo Son, and Hyunsang Hwang / Microelectronic Engineering 93, pp.81-84 (201205)  

Improved Switching Variability and Stability by Activating a Single Conductive Filament / Jubong Park, Seungjae Jung, Wootae Lee, Seonghyun Kim, Jungho Shin, Daeseok Lee, Jiyong Woo, and Hyunsang Hwang / IEEE Electron Device Letters  33 (5), pp.646-648 (201205) 

Self-selective Characteristics of Nanoscale VO_x Devices for High-density ReRAM Applications / Myungwoo Son, Xinjun Liu, Sharif Md. Sadaf, Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, and Hyunsang Hwang / IEEE Electron Device Letters  33(5), pp.718-719 (201205)