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12
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Highly Reliable Hf₁₋ₓZrₓO₂ with Ultra-Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer / Mostafa Habibi, Alireza Kashir, Tony Schenk, Hojung Jang, Seungyeol Oh, Jaeseon Kim, Geonhui Han, Donghwa Lee, Foroozan Koushan, Hyunsang Hwang / Advanced Materials Technologies, e00507 (202507)
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11
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Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy / Jongseon Seo, Geonhui Han, Laeyong Jung, Ohhyuk Kwon, Hyunsang Hwang / IEEE Electron Device Letters, 46(8), 1349–1352 (202508)
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10
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Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design / Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang / Advanced Electronic Materials, 11, 2400764 (202506)
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9
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Uniform temperature distribution in microwave heating achieved via rotating electric field / Jongseon Seo, Geonhui Han, Hyunsang Hwang / Scientific Reports, 15, 17960 (2025)
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8
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Exploring the Morphotropic Phase Boundary in HfO₂-Based Ferroelectrics for Advanced High-k Dielectrics / Seungyeol Oh, Hojung Jang, Mostafa Habibi, Minchul Sung, Hyejung Choi, Seyeon Kim, Hyunsang Hwang / Advanced Materials Technologies, 10(10), 2401041 (202505)
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7
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Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond / Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang / Advanced Electronic Materials, 11(6), 2400665 (202505)
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6
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Tailoring Ferroelectric Performance and Domain Structure Ordering in HZO Capacitors via 2D-WS₂ Multifunctional Layer / Seungkwon Hwang, Hojung Jang, Kyumin Lee, Laeyong Jung, Jongwon Yoon, Jung-Dae Kwon / IEEE Transactions on Electron Devices, 72(5), 2700–2707 (202505)
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5
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Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory / Jangseop Lee, Taras Ravshcer, Daniele Garbin, Sergiu Clima, Robin Degraeve, Attilio Belmonte / IEEE Journal of the Electron Devices Society, 13, 362–365 (202504)
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4
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Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory / Geonhui Han, Jongseon Seo, Junghoon Park, Minji Hong, Juhyung Kim, Kilho Lee, Wanki Kim, Daewon Ha, Hyunsang Hwang / ACS Applied Materials & Interfaces, 17(13), 19977–19986 (202503)
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3
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Enabling Memory Window in Ovonic Threshold Switch Devices Through Cu-Based Trap for Selector-Only Memory Operation / Sunhyeong Lee, Laeyong Jung, Seongjae Heo, Hyunsang Hwang / IEEE Electron Device Letters, 46(5), 753–756 (202505)
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2
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Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory / Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang / Advanced Electronic Materials, 11(11), 2400920 (202507)
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1
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Improved Memory Performance Through Integration of Ferroelectric and Ovonic Threshold Switching Layer / Laeyong Jung, Jangseop Lee, Seungyeol Oh, Yoori Seo, Ohhyuk Kwon, Hyunsang Hwang / IEEE Electron Device Letters, 46(1), 44–47 (202501)
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