Semiconductor Integrated Device & Process Lab.

Journals

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Journals

364

Ferroelectric materials for neuromorphic computing / S. Oh, H. Hwang, and I. K. Yoo / APL Materials 7(9),091109 (201909) 

363

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions / Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1900744 (201909) 

362

One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices / Seokjae Lim, Myounghoon Kwak, and Hyunsang Hwang / Nanotechnology 30 (2019) 455201 (201908) 

361

Improved Endurance of HfO2-based Metal-Ferroelectric-Insulator-Silicon structure by High-Pressure Hydrogen Annealing / Seungyeol Oh, Jeonghwan Song, In Kyeong Yoo, Hyunsang Hwang / IEEE Electron Device Letters 40(7),8706981, pp. 1092-1095 (201907) 

360

Stuck-at-Fault Tolerant Schemes for Memristor Crossbar Array-Based Neural Networks / Injune Yeo , Myonglae Chu , Sang-Gyun Gi , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices 66(7),8715385, pp. 2937-2945 (201907) 

359

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications / Jongmyung Yoo, Seong Hun Kim, Solomon Amsalu Chekol, Jaehyuk Park, Changhyuck Sung, Jeonghwan Song, Donghwa Lee, Hyunsang Hwang / Advanced Electronic Materials 1900196 (201905)

358

Understanding of Proton Induced Synaptic Behaviors in Three–terminal Synapse Device for Neuromorphic Systems / Jongwon Lee, Seokjae Lim, Myonghoon Kwak, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 30 (25) 255202 (6pp) (201904) 

357

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application / Solomon Amsalu Chekol, Jeonghwan Song, Jongmyung Yoo, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 114(10),102106 (201903) 

356

Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory / Sangmin Lee, Jeonghwan Song, Seokjae Lim, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 8-11 (201903)

355

Hardware implementation of neural network using pre-programmed resistive device for pattern recognition / Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee,Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 79-83 (201903) 

354

Various Threshold Switching device for Integrate and Fire Neuron Applications / Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jaehyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung,  Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1800866, pp.1-7 (201902) 

353

Synaptic and neuromorphic functions: general discussion / Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Koymen, Michael Kozicki, Yang Li,Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters and Yuchao Yang / Faraday discussions  213, 553-578 (201902)

352

RRAM-based synapse devices for neuromorphic systems / K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee and H. Hwang / Faraday discussions 213, pp. 421-451 (201902) 

351

W/WO3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)

350

NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)

349

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812) 

348
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201812)
347
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy / Niloufar Raeis‐Hosseini, Seokjae Lim, Hyunsang Hwang, Junsuk Rho / Advanced Electronic Materials 4(11),1800360 (201811)
346

Perspective: A review on memristive hardware for neuromorphic computation / Changhyuck Sung,  Hyunsang Hwang, and  In Kyeong Yoo / Journal of Applied Physics  124(15),151903 (201810)

345

Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image Processing  / Myonghoon Kwak , Jaesung Park , JiyongWoo , and Hyunsang Hwang / IEEE Transactions on Electron Devices  65(10), 8435959, pp. 4716-4718  (201810)