Highly Reliable Hf₁₋ₓZrₓO₂ with Ultra-Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer / Mostafa Habibi, Alireza Kashir, Tony Schenk, Hojung Jang, Seungyeol Oh, Jaeseon Kim, Geonhui Han, Donghwa Lee, Foroozan Koushan, Hyunsang Hwang / Advanced Materials Technologies, e00507 (202507)​

Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy / Jongseon Seo, Geonhui Han, Laeyong Jung, Ohhyuk Kwon, Hyunsang Hwang / IEEE Electron Device Letters, 46(8), 1349–1352 (202508)​

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation / Dongmin Kim, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Pendar Azaripour Masouleh, Jisung Lee, Joonhyun Kwon, Chul-Heung Kim, Hyunsang Hwang / Advanced Electronic Materials, 11, 2400881 (202505) 

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design / Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang / Advanced Electronic Materials, 11, 2400764 (202506)

Uniform temperature distribution in microwave heating achieved via rotating electric field / Jongseon Seo, Geonhui Han, Hyunsang Hwang / Scientific Reports, 15, 17960 (2025) 

Exploring the Morphotropic Phase Boundary in HfO₂-Based Ferroelectrics for Advanced High-k Dielectrics / Seungyeol Oh, Hojung Jang, Mostafa Habibi, Minchul Sung, Hyejung Choi, Seyeon Kim, Hyunsang Hwang / Advanced Materials Technologies, 10(10), 2401041 (202505)  

Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond / Sanghyun Ban, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, Hyunsang Hwang / Advanced Electronic Materials, 11(6), 2400665 (202505)  

Vertical-Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas / Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang / Advanced Electronic Materials, 11(7), 2400650 (202505) 

Tailoring Ferroelectric Performance and Domain Structure Ordering in HZO Capacitors via 2D-WS₂ Multifunctional Layer / Seungkwon Hwang, Hojung Jang, Kyumin Lee, Laeyong Jung, Jongwon Yoon, Jung-Dae Kwon / IEEE Transactions on Electron Devices, 72(5), 2700–2707 (202505) 

Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory / Jangseop Lee, Taras Ravshcer, Daniele Garbin, Sergiu Clima, Robin Degraeve, Attilio Belmonte / IEEE Journal of the Electron Devices Society, 13, 362–365 (202504)​

Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory / Geonhui Han, Jongseon Seo, Junghoon Park, Minji Hong, Juhyung Kim, Kilho Lee, Wanki Kim, Daewon Ha, Hyunsang Hwang / ACS Applied Materials & Interfaces, 17(13), 19977–19986 (202503) 

Enabling Memory Window in Ovonic Threshold Switch Devices Through Cu-Based Trap for Selector-Only Memory Operation / Sunhyeong Lee, Laeyong Jung, Seongjae Heo, Hyunsang Hwang / IEEE Electron Device Letters, 46(5), 753–756 (202505) 

Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory / Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang / Advanced Electronic Materials, 11(11), 2400920 (202507)​

Improved Memory Performance Through Integration of Ferroelectric and Ovonic Threshold Switching Layer / Laeyong Jung, Jangseop Lee, Seungyeol Oh, Yoori Seo, Ohhyuk Kwon, Hyunsang Hwang / IEEE Electron Device Letters, 46(1), 44–47 (202501) ​

Quantitative Analysis and Characterization of Sidewall Defects in InGaN-Based Blue Micro-LEDs / Jeonghyeon Park, Won Seok Cho, Hojung Jang, Jawon Kim, Chuljong Yoo, Buem Joon Kim, Junseok Jeong, Jong Won Lee, Hyunsang Hwang, Jong Kyu Kim / ACS Applied Electronic Materials, 6(11), 8377–8383 (202411) 

Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source / Sunhyeong Lee, Chuljun Lee, Ohhyuk Kwon, Seongjae Heo, Hyunsang Hwang / Applied Physics Letters, 125(18), 182105 (202410) 

Enhancing Selector-Only Memory Reliability Through Multi-Step Write Pulse / Yoori Seo, Sanghyun Ban, Jangseop Lee, Dongmin Kim, Laeyong Jung, Hyunsang Hwang / IEEE Electron Device Letters, 45(12), 2383–2386 (202412) 

Mg-Ion-Based Electrochemical Synapse With Superior Retention / Heebum Kang, Kyumin Lee, Seungkwon Hwang, Hyunsang Hwang / IEEE Electron Device Letters, 45(12), 2557–2560 (202412) 

Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf₁₋ₓZrₓO₂ in a Nanolaminate Structure / Hojung Jang, Alireza Kashir, Tony Schenk, Mostafa Habibi, Martin Schuster, Seungyeol Oh, Stefan Müller, Hyunsang Hwang / ACS Applied Materials & Interfaces, 16(41), 55627–55636 (202410)​

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher-Temperature Forming Technique / Jangseop Lee, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / physica status solidi (RRL) – Rapid Research Letters, 18(10), 2300412 (202410)