Asymmetric bipolar resistive switching in solution-processed Pt/TiO₂/W devices / Kuyyadi P Biju, XinJun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Hyunsang Hwang / Journal of Physics D: Applied Physics 43 (49), art. no. 495104 (2010.12.15)

Improved resistive switching properties of solution processed TiO₂ thin films / Kuyyadi P. Biju, Xinjun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Jubong Park,  Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (12), pp. H443-H446 (2010.12)

Three-Dimensional Integration of Organic Resistive Memory Devices / Sunghoon Song , Byungjin Cho , Tae-Wook Kim , Yongsung Ji , Minseok Jo ,Gunuk Wang , Minhyeok Choe , Yung Ho Kahng , Hyunsang Hwang , Takhee Lee / Advanced Materials 22 (44), pp. 5048-5052 (2010.11.24)

Effect of ZrO_x/HfO_x bilayer structure on switching uniformity and reliability in nonvolatile memory applications / Joonmyoung Lee, El Mostafa Bourim, Wootae Lee, Jubong Park, Minseok Jo, Seungjae Jung, Jungho Shin, Hyunsang Hwang / Applied Physics Letters 97 (17), art. no. 172105

Low programming voltage resistive switching in reactive metal/polycrystalline Pr_0.7Ca_0.3MnO₃ devices / Xinjun Liu, Kuyyadi P. Biju, El Mostafa Bourim, Sangsu Park, Wootae Lee, Jungho Shin, Hyunsang Hwang / Solid State Communications 150 (45-46), pp. 2231-2235

Resistive switching characteristics of solution-processed transparent TiO_x for nonvolatile memory application / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Journal of the Electrochemical Society 157 (11), pp. H1042-H1045

Reverse resistance switching in polycrystalline Nb₂O₅ films / Younghun Jo, Hyunjun Sim, Hyunsang Hwang, Ken Ahn, Myung-Hwa Jung / Thin Solid Films 518 (20), pp. 5676-5678 (2010.08.02)

Investigation of State Stability of Low Resistance State in Resistive Memory / Jubong Park, Minseok Jo, El Mostafa Bourim, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, and Hyunsang Hwang / IEEE Electron Device Letters 31(5), art. no. 5433005, pp. 485-487 (2010.05)

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant / Minseok Jo, Seonghyun Kim, Joonmyoung Lee, Seungjae Jung, Ju-Bong Park, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / Applied Physics Letters 96 (14), art. no. 142110 (2010.04.05)

Effect of Fast Components in Threshold Voltage Shift on Bias Temperature Instability in High-k MOSFETs / Minseok Jo, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / IEEE Electron Device Letters 31 (4), art. no. 13, pp. 287-289 (2010.04)

Rewritable switching of one diode-one resistor nonvolatile organic memory devices / Byungjin Cho, Tae-Wook Kim, Sunghoon Song, Yongsung Ji, Minseok Jo, Hyunsang Hwang, Gun-Young Jung, Takhee Lee / Advanced Materials 22 (11), pp. 1228-1232 (2010.03.19)

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application / Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong-Hyun Ahn, Min-Seok Jo, and Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (3), pp. H80-H82 (2010.03)

Electrical properties of ZnO nanowire field effect transistors with varying high-k Al₂O₃ dielectric thickness / Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong-Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, and Takhee Lee / Journal of Applied Physics 107 (3), art. no. 034504 (2010.02.01)

Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices / M. Chang, H. Hwang, and S. Jeon  / Applied Physics Letters 96 (5), art. no. 052106 (2010.02.01)

Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices / Tae-Wook Kim, Seung-Hwan Oh, Joonmyoung Lee, Hyejung Choi, Gunuk Wang, Jubong Park, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Organic Electronics: physics, materials, applications 11 (1), pp. 109-114 (2010.01)

Analysis of interface switching for Nb doped SrTiO₃ single crystal device using complex impedance spectroscopy / Joonmyoung Lee, El Mostafa Bourima, Dongku Shin, Jong-Sook Lee, Dong-jun Seong, Jubong Park, Wootae Lee, Man Chang, Seungjae Jung, Jungho Shin and Hyunsang Hwang, / Current Applied Physics 10 (1 SUPPL. 1), pp. e68-e70 (2010.01)