RRAM-based synapse and I&F neuron device for neuromorphic pattern recognition system / Hyunsang Hwang / NTU Singapore Colleage of Science (School of Physical and Mathematical Sciences), online, 2022.07.21​​​

RRAM based synapse and threshold switching based neuron device for neuromorphic system  / Hyunsang Hwang / European Materials Research Society(E-MRS) 2019 Fall Meeting Warsaw University of Technology, Poland 2019.09.16 

Resistive switching based Synapse and Threshold switching based Neuron Devices for neuromorphic system / Hyunsang Hwang / Design, Automation and Test in Europe (DATE 2019) FLORENCE, ITALY 2019.03.29  

RRAM-based synapse and I&F neuron device for neuromorphic pattern recognition system / Hyunsang Hwang / 2018 International workshop on future computing (IWOFC) Shenzhen, China 2018.12.18 

RRAM-based synapse devices for neuromorphic systems / Hyunsang Hwang, K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo and J. Lee / New memory paradigms: memristive phenomena and neuromorphic applications Faraday Discussion Aachen, Germany 2018.10.17 

Various selector devices with threshold switching characteristics / Hyunsang Hwang / 8th imec-Stanford International Workshop on Resistive Memories Stanford, CA, USA 2018.10.04 

ReRAM-based synapse and IMT oscillator neuron devices for neuromorphic system / Hyunsang Hwang / International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2018) China National Convention Center, Beijing, China 2018.07.05 

ReRAM-Based Analog Synapse Devices for Neuromorphic System / Hyunsang Hwang / 2018 International Conference on IC Design and Technology(ICICDT) Otranto, Italy 2018.06.04 (Tutorial 1)

ReRAM-Based Synapse Devices and IMT Oscillator Neuron for Neuromorphic System  / Hyunsang Hwang / 2018 MRS SPRING MEETING & EXHIBIT Phoenix, Arizona 2018.04.03 (invited) 

Analog Synapse Devices based on Interface Resistive Switching for Neuromorphic Systems / Hyunsang Hwang / 47th European Solid-State Device Research Conference(ESSDERC) LEUVEN, Belgium 2017.09.11 (tutorial)​

ReRAM-Based Analog Synapse Devices for Neuromorphic System / Hyunsang Hwang / CHINA RRAM 2017 / the ChinaRRAM International Workshop Soochow University, Suzhou, China  2017.06.12 

Nano-Scale Analog Synaptic Devices for Neuromorphic(Short Course) / Hyunsang Hwang / 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Toyama, JAPAN 2017.02.28

ReRAM-based Analog Synapse and IMT Neuron Device for Neuromorphic System / Kibong Moon, Euijun Cha, Daeseok Lee, Junwoo Jang, Jaesung Park, Hyunsang Hwang* /  2016 International Symposium on VLSI Technology, Systems and Application, 2016 VLSI-TSA  Ambassador Hotel Hsinchu,Taiwan 2016.04.25 ​(Invited Talk) ​

ReRAM-based Analog Synapse and IMT Neuron Device for Neuromorphic System /  / FRONTIERS IN NEUROMORPHICS WORKSHOP University of California, Los Angeles (UCLA) 2016.04.14 

Materials and Process Aspect of Cross-Point RRAM /  J. Lee, M. Jo, D.-J. Seong, J. Shin, Hyunsang Hwang / 17th Conference on "Insulating Films on Semiconductors"(INFOS 2011), Grenoble, France,
2011.06.22(Invited)

Macroscopic Vacancy Mechanism / Hyunsang Hwang / ITRS workshop on Memory Materials for STT RAM and Redox RAM, Tsukuba, Japan, 2010.11.30

Electrical and Reliability Characteristics of RRAM for Cross-point Memory Applications / Hyunsang Hwang / New Non-Volatile Memory Workshop 2010, Hsinchu, Taiwan, 2010.11.12 (Invited)

Panelist of Non-volatile Memory Panel at the International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), Shanghai, China, 2010.11.03

Perovskite RRAM / Hyunsang Hwang / International Symposium on Advanced Gate Stack Technology, Albany,2010.09.30(Invited)

A Study on switching mechanism of various RRAM devices and its effects on electrical and reliability characteristics / Hyunsang Hwang / International Workshop on Conductive Bridge Memory (CBRAM), Stanford, 2010.04.23(Invited)