Semiconductor Integrated Device & Process Lab.

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Journals

284

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM / Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash and Hyunsang Hwang / ECS Solid State Letters 4 (7), pp. Q25-Q28 (201505) 

283

Optimization of Conductance Change in Pr1−xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems / Jun-Woo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, and Yoon-Ha Jeong / IEEE Electron Device Letters 36 (5), 7078840, pp. 457-459 (201505)

282

Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron / Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee / IEEE Transactions on Industrial Electronics 62 (4), 6894575, pp. 2410-2419 (201504) 

281

Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array / Saiful Haque Misha, Nusrat Tamanna, Amit Prakash, Jeonghwan Song, Daeseok Lee, Euijun Cha and Hyunsang Hwang / Japanese Journal of Applied Physics 54 (4), 04DD09 (201504) 

280

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device / Daeseok Lee, Kibong Moon, Jaesung Park, Sangsu Park, and Hyunsang Hwang / Applied Physics Letters 106 (11), 113701 (201503) 

279

Accelerated Retention Test Method by Controlling Ion Migration Barrier of ReRAM / Yunmo Koo, Stefano Ambrogio, Jiyong Woo, Jeonghwan Song, Daniele Ielmini, and Hyunsang Hwang / IEEE Electron Device Letters 36 (3), 7015563, pp. 238-240 (201503) 

278

Effect of AC pulse overshoot on non-linearity and reliability of selector-less resistive random access memory in AC pulse operation / Sangheon Lee, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang / Solid-State Electronics 104, 70-4 (201502) 

277

Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications / Saiful Haque Misha, Nusrat Tamanna, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, and Hyunsang Hwang / ECS Solid State Letters  4(3) P25-P28 (201501) 

276

Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory / Daeseok Lee, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo andHyunsang Hwang / Advanced Materials 27(1), p59-64 (201501) 

275

Demonstration of low power 3-bit multi-level cell characteristics in a TaOx-based RRAM by stack engineering / Amit Prakash, Jaesung Park, Jeonghwan Song, Jiyong Woo, Eui-Jun Cha, and Hyunsang Hwang / IEEE Electron Device Letters 36(1), pp.32-34 (201501) 

274
Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs  / Sangheon Lee, Jiyong Woo , Daeseok Lee , Euijun Cha , Hyunsang Hwang / Solid-State Electronics 102, pp. 42-45 (201412)
273

Internal Resistor of Multi-Functional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access Memory  / Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, and Hyunsang Hwang / Nanoscale Research Letters 9:364 (201412)  

272

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device / Kibong Moon, Sangsu Park, Junwoo Jang, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Jaesung Park, Jeonghwan Song, Yunmo Koo and Hyunsang Hwang / Nanotechnology 25 (49) , art. no. 495204  (201411) 

271
Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, and Hyunsang Hwang / IEEE Electron Device Letters 35 (10), 6891220, pp. 1022-1024 (201410)
270

A nitrogen-treated memristive device for tunable electronic synapses / Sangsu Park, Manzar Siddik, Jinwoo Noh, Daeseuk Lee, Kibong moon, Jiyong Woo, Byoung Hun Lee, and Hyunsang Hwang / Semiconductor Science and Technology 29(10), pp. 104006-104010(5) (201409) 

269
Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Jaesung Park and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201409)
268
Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory  / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Hyunsang Hwang /  Journal of Electronic Materials 43 (9), pp. 3635-3639 (201409)
267
Non-linear I-V characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM  / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Behnoush Attarimashalkoubeh, Jeonghwan Song, Sangheon Lee, Kibong Moon, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201407)
266
Effects of Ti buffer layer on retention and electrical characteristics of Cu-based conductive-bridge random access memory (CBRAM)  / Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jeonghwan Song, Jiyong Woo, Saiful Haque Misha, Nusrat Tamanna, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P120-P122 (201407)
265
Access devices for 3D crosspoint memory / Geoffrey W. Burr, Rohit S. Shenoy, Kumar Virwani, Pritish Narayanan, Alvaro Padilla, and Bulent Kurdi, Hyunsang Hwang, / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  32(4), 040802-1~23 (201407)