Semiconductor Integrated Device & Process Lab.

Journals

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Journals

299
Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)

 

298
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)

 

297
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)
296

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602) 

295
Communication—Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)

 

294

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)

293

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)

292

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)

291

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)

290

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application / Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Jaesung Park, Hyunsang Hwang / Microelectronic Engineering 147, pp. 318-320 (201511)

289

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element  / Geoffrey W. Burr, Robert M. Shelby, Severin Sidler, Carmelo di Nolfo, Junwoo Jang, Irem Boybat, Rohit S. Shenoy, Pritish Narayanan, Kumar Virwani, Emanuele U. Giacometti, Bülent N. Kurdi, and Hyunsang Hwang, /  IEEE Transactions on Electron Devices 62(11), 3498-3507 (201511)

288

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application / Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Applied Physics Letters 107 (11), 113504 (201509)

287

Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array / Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  36 (7) , 681-683 (201507) 

286

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application / A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, and H. Hwang / Applied Physics Letters 106(23), 233104 (201506) 

285

Electronic system with memristive synapses for pattern recognition / Sangsu Park, Myonglae Chu, Jongin Kim, Jinwoo Noh, Moongu Jeon, Byoung Hun Lee, Hyunsang Hwang, Boreom Lee, Byung-geun Lee / Scientific Reports 5, 10123 (201505) 

284

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM / Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash and Hyunsang Hwang / ECS Solid State Letters 4 (7), pp. Q25-Q28 (201505) 

283

Optimization of Conductance Change in Pr1−xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems / Jun-Woo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, and Yoon-Ha Jeong / IEEE Electron Device Letters 36 (5), 7078840, pp. 457-459 (201505)

282

Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron / Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee / IEEE Transactions on Industrial Electronics 62 (4), 6894575, pp. 2410-2419 (201504) 

281

Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array / Saiful Haque Misha, Nusrat Tamanna, Amit Prakash, Jeonghwan Song, Daeseok Lee, Euijun Cha and Hyunsang Hwang / Japanese Journal of Applied Physics 54 (4), 04DD09 (201504) 

280

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device / Daeseok Lee, Kibong Moon, Jaesung Park, Sangsu Park, and Hyunsang Hwang / Applied Physics Letters 106 (11), 113701 (201503)