Semiconductor Integrated Device & Process Lab.

Journals

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Journals

310

Analog Synapse Device with 5-bit MLC and Improved Data Retention for Neuromorphic System / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sang Ho Oh, and Hyunsang Hwang,/ IEEE Electron Device Letters 37 (8), 7497521, pp. 1067-1070 (201608) 

309

Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (8), 7496808, pp. 994-997 (201608)

308

Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device / Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (7), pp. 932-934 (201607) 

307

Communication-hourglass-shaped metal-filament switching device with multi-layer (AlOx/TiO2) oxide electrolytes / Seokjae Lim, Jiyong Woo, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, / ECS Journal of Solid State Science and Technology 5 (9), pp. Q219-Q221 (201607) 

306

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory / Amit Prakash, Hyunsang Hwang / Physical Sciences Reviews 1(6) (201606) 

305

Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions / Jun-Woo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, Hyunsang Hwang, and Yoon-Ha Jeong, / IEEE Transactions on Electron Devices 63 (6), 7450157, pp. 2610-2613 (201606) 

304
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption / Wentao Xu, Sung-Yong Min, Hyunsang Hwang, and Tae-Woo Lee, / Science advances 2(6), 150132, pp.1-7 (201606) 
303

Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector / Jaehyuk Park, Euijun Cha, Ilya Karpov, and Hyunsang Hwang / Applied Physics Letters 108 (23), 232101 (201606) 

302
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier / Jaesung Park, Jiyong Woo, Amit Prakash, Sangheon Lee, Seokjae Lim and Hyunsang Hwang / AIP Advances 6(5), 055114 (201605)
301
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM  / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Journal of Nanoscience and Nanotechnology 16(5), 4758-4761  (201605)
300
Introduction of WO3 Layer in a Cu-based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Journal of the Electron Devices Society  4 (3), 7400894, pp. 163-166 (201605)

 

299
Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)

 

298
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)

 

297
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)
296

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602) 

295
Communication—Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)

 

294

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)

293

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)

292

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)

291

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)