Semiconductor Integrated Device & Process Lab.

Journals

Home Publications Journals

Journals

304
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption / Wentao Xu, Sung-Yong Min, Hyunsang Hwang, and Tae-Woo Lee, / Science advances 2(6), 150132, pp.1-7 (201606) 
303

Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector / Jaehyuk Park, Euijun Cha, Ilya Karpov, and Hyunsang Hwang / Applied Physics Letters 108 (23), 232101 (201606) 

302
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier / Jaesung Park, Jiyong Woo, Amit Prakash, Sangheon Lee, Seokjae Lim and Hyunsang Hwang / AIP Advances 6(5), 055114 (201605)
301
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM  / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Journal of Nanoscience and Nanotechnology 16(5), 4758-4761  (201605)
300
Introduction of WO3 Layer in a Cu-based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Journal of the Electron Devices Society  4 (3), 7400894, pp. 163-166 (201605)

 

299
Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)

 

298
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)

 

297
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)
296

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602) 

295
Communication—Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)

 

294

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)

293

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)

292

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)

291

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)

290

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application / Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Jaesung Park, Hyunsang Hwang / Microelectronic Engineering 147, pp. 318-320 (201511)

289

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element  / Geoffrey W. Burr, Robert M. Shelby, Severin Sidler, Carmelo di Nolfo, Junwoo Jang, Irem Boybat, Rohit S. Shenoy, Pritish Narayanan, Kumar Virwani, Emanuele U. Giacometti, Bülent N. Kurdi, and Hyunsang Hwang, /  IEEE Transactions on Electron Devices 62(11), 3498-3507 (201511)

288

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application / Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Applied Physics Letters 107 (11), 113504 (201509)

287

Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array / Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  36 (7) , 681-683 (201507) 

286

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application / A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, and H. Hwang / Applied Physics Letters 106(23), 233104 (201506) 

285

Electronic system with memristive synapses for pattern recognition / Sangsu Park, Myonglae Chu, Jongin Kim, Jinwoo Noh, Moongu Jeon, Byoung Hun Lee, Hyunsang Hwang, Boreom Lee, Byung-geun Lee / Scientific Reports 5, 10123 (201505)