Semiconductor Integrated Device & Process Lab.

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Journals

344

Improved Synaptic Behavior of CBRAM using Internal Voltage Divider for Neuromorphic Systems / Seokjae Lim , Myounghoon Kwak , and Hyunsang Hwang / IEEE Transactions on Electron Devices 65(9),8424473, pp. 3976-3981  (201809) 

343

Modeling and System-Level Simulation for Non-Ideal Conductance Response of Synaptic Devices / Sang-Gyun Gi , Injune Yeo, Myonglae Chu, Kibong Moon , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices  65(9),8424206, pp. 3996-4003   (201809​)

342

Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters / Yunmo Koo, Hyunsang Hwang / Scientific Reports  8(1),11822 (201808) 

341

Hybrid Selector with Excellent Selectivity and Fast Switching Speed for X-point memory array / Jaehyuk Park , Jongmyung Yoo , Jeonghwan Song , Changhyuck Sung , and Hyunsang Hwang /  IEEE Electron Device Letters  39(8), pp. 1171-1174   (201808) 

340
C-Te Based Binary OTS Device Exhibiting Excellent Performance and High Thermal Stability for Selector Application / Solomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Changhyuck Sung and Hyunsang Hwang  / Nanotechnology 29(34),345202  (201808)
339

Steep Slope Field-Effect Transistors with B-Te based Ovonic Threshold Switch Device / Jongmyung Yoo, Donguk Lee, Jaehyuk Park, Jeonghwan Song, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  6(1),8412090, pp. 821-824 (201807) 

338

Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis  / Myoung-Jae Lee , Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung , Chun-Yeol You , Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park  / ACS Applied Materials and Interfaces  10(35), pp. 29757-29765  (201807) 

337

Improved Synapse Device with MLC and Conductance Linearity using Quantized Conduction for Neuromorphic Systems / Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang /  IEEE Electron Device Letters 39(2),8246549, pp. 312-315  (201802)

336

CMOS Compatible Low-Power Volatile Atomic Switch for Steep-Slope FET Devices / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang / Applied Physics Letters  113(3),033501 (201807) 

335

Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices / Jongmyung Yoo, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 29(36),365707 (201807) 

334
Ultrasensitive artificial synapse based on conjugated polyelectrolyte  / Wentao Xu, Thanh Luan Nguyen, Young-Tae Kim, Christoph Wolf, Raphael Pfattner, Jeffrey Lopez, Byeong-Gyu Chae, Sung-Il Kim, Moo Yeol Lee, Eul-Yong Shin, Yong-Young Noh, Joon Hak Oh, Hyunsang Hwang, Chan-Gyung Park, Han Young Woo, Tae-Woo Lee /  Nano Energy   48, pp. 575-581 (201806)
333

Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications / Andrea Padovani, Jiyong Woo, Hyunsang Hwang, Luca Larcher  /  IEEE Electron Device Letters   39(5), pp. 672-675  (201805)

332
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system / Changhyuck Sung, Seokjae Lim, Hyungjun Kim, Taesu Kim, Kibong Moon, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang / Nanotechnology 29(11),115203 (201803) 
331
Additional hardening in harmonic structured materials by strain partitioning and back stress / Hyung Keun Park, Kei Ameyama, Jongmyung Yoo, Hyunsang Hwang, Hyoung Seop Kim /   Materials Research Letters   6(5), pp. 261-267  (201802)
330

Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications / Jeonghwan Song, Jiyong Woo, Seokjae Lim, Solomon Amsalu Chekol, and Hyunsang Hwang / IEEE Electron Device Letters 38(11), pp. 1532-1535 (201711)

329

Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices / Jeonghwan Song, Jiyong Woo, Jongmyung Yoo, Solomon Amsalu Chekol, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / IEEE Transactions on Electron Devices 64(11), pp.4763-4767 (201711)

328

Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices / Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 111(6),063109 (201710)

327

Excellent Threshold Selector Characteri​stics of Cu2S-based Atomic Switch Device / Seokjae Lim, Jiyong Woo, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(9), pp. 586-588 (201710)

326

Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements / Jiyong Woo, Dongwook Lee, Yunmo Koo, Hyunsang Hwang / Microelectronic Engineering 182(5) pp. 42-45 (201710)

325

Reduced off-current of NbO2 by thermal oxidation of polycrystalline Nb wire / Solomon Amsalu Chekol, Jeonghwan Song, Jaehyuk Park, Euijun Cha, Seokjae Lim, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(9), pp. 641-643 (201709)