Semiconductor Integrated Device & Process Lab.

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Journals

356

Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory / Sangmin Lee, Jeonghwan Song, Seokjae Lim, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 8-11 (201903)

355

Hardware implementation of neural network using pre-programmed resistive device for pattern recognition / Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee,Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 79-83 (201903) 

354

Various Threshold Switching device for Integrate and Fire Neuron Applications / Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jaehyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung,  Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1800866, pp.1-7 (201902) 

353

Synaptic and neuromorphic functions: general discussion / Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Koymen, Michael Kozicki, Yang Li,Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters and Yuchao Yang / Faraday discussions  213, 553-578 (201902)

352

RRAM-based synapse devices for neuromorphic systems / K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee and H. Hwang / Faraday discussions 213, pp. 421-451 (201902) 

351

W/WO3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)

350

NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)

349

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812) 

348
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201812)
347
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy / Niloufar Raeis‐Hosseini, Seokjae Lim, Hyunsang Hwang, Junsuk Rho / Advanced Electronic Materials 4(11),1800360 (201811)
346

Perspective: A review on memristive hardware for neuromorphic computation / Changhyuck Sung,  Hyunsang Hwang, and  In Kyeong Yoo / Journal of Applied Physics  124(15),151903 (201810)

345

Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image Processing  / Myonghoon Kwak , Jaesung Park , JiyongWoo , and Hyunsang Hwang / IEEE Transactions on Electron Devices  65(10), 8435959, pp. 4716-4718  (201810) 

344

Improved Synaptic Behavior of CBRAM using Internal Voltage Divider for Neuromorphic Systems / Seokjae Lim , Myounghoon Kwak , and Hyunsang Hwang / IEEE Transactions on Electron Devices 65(9),8424473, pp. 3976-3981  (201809) 

343

Modeling and System-Level Simulation for Non-Ideal Conductance Response of Synaptic Devices / Sang-Gyun Gi , Injune Yeo, Myonglae Chu, Kibong Moon , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices  65(9),8424206, pp. 3996-4003   (201809​)

342

Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters / Yunmo Koo, Hyunsang Hwang / Scientific Reports  8(1),11822 (201808) 

341

Hybrid Selector with Excellent Selectivity and Fast Switching Speed for X-point memory array / Jaehyuk Park , Jongmyung Yoo , Jeonghwan Song , Changhyuck Sung , and Hyunsang Hwang /  IEEE Electron Device Letters  39(8), pp. 1171-1174   (201808) 

340
C-Te Based Binary OTS Device Exhibiting Excellent Performance and High Thermal Stability for Selector Application / Solomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Changhyuck Sung and Hyunsang Hwang  / Nanotechnology 29(34),345202  (201808)
339

Steep Slope Field-Effect Transistors with B-Te based Ovonic Threshold Switch Device / Jongmyung Yoo, Donguk Lee, Jaehyuk Park, Jeonghwan Song, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  6(1),8412090, pp. 821-824 (201807) 

338

Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis  / Myoung-Jae Lee , Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung , Chun-Yeol You , Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park  / ACS Applied Materials and Interfaces  10(35), pp. 29757-29765  (201807) 

337

Improved Synapse Device with MLC and Conductance Linearity using Quantized Conduction for Neuromorphic Systems / Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang /  IEEE Electron Device Letters 39(2),8246549, pp. 312-315  (201802)