Semiconductor Integrated Device & Process Lab.

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Conferences

131

Te-Based Binary OTS Selectors with Excellent Selectivity (>105), Endurance (>108) and Thermal Stability (>450 °C) / J. Yoo, Y. Koo, S. A. Chekol, J. Park, J. Song, H. Hwang / 2018 Symposia on VLSI Technology and Circuits.

130

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time /  J. Park, D. Lee, J.M. Yoo and H. Hwang / 2017 IEEE International Electron Devices Meeting (IEDM) 

129

Study on Insulator - metal transition characteristics of NbO2 for selector device / Jaehyuk Park, Euijun Cha and Hyunsang Hwang / Non-Volatile Memory Technology Symposium 2017(NVMTS 2017) 

128

Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors / Jeonghwan Song, Jaehyuk Park, Kibong Moon, Jiyong Woo, Seokjae Lim, Jongmyung Yoo, Dongwook Lee, and Hyunsang Hwang / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 

127
Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang, / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 
126

Full Chip Integration of 3-D Cross-Point ReRAM with Leakage-Compensating Write Driver and Disturbance-Aware Sense Amplifier / Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-moon Choi, Soon-chan Kwon, Ho-joon Kim, Hyun-suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-won Kwon, Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits 

125
Te-Based Amorphous Binary OTS Device with Excellent Selector Characteristics for X-point Memory  / Yunmo Koo, Kyungjoon Baek, and Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits
124

High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sangho Oh,  Hyunsang Hwang,  / 2015 IEEE International Electron Devices Meeting (2015 IEDM) 

123

Oxide based nanoscale analog synapse device for neural signal recognition system / Daeseok Lee, Jaesung Park, Kibong Moon, Junwoo Jang, Sangsu Park, and Hyunsang Hwang, / 2015 IEEE International Electron Devices Meeting (2015 IEDM) 

122

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element / Burr, G.W. ,  Shelby, R.M.,  Di Nolfo, C.,  Jang, J.W.,  Shenoy, R.S.,  Narayanan, P.,  Virwani, K.,  Giacometti, E.U.,  Kurdi, B.,  Hwang, H. / 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 

121

Electrical and Reliability Characteristics of a Scaled (~30nm) Tunnel Barrier Selector (W/Ta2O5/TaOx/TiO2/TiN) with Excellent Performance (JMAX > 107A/cm2) / Jiyong Woo, Jeonghwan Song, Kibong Moon, Ji hyun Lee, Euijun Cha, Amit Prakash, Daeseok Lee, Sangheon Lee, Jaesung Park, Yunmo Koo, Chan gyung Park, Hyunsang Hwang / 2014 Symposia on VLSI Technology and Circuits 

120
Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode / E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. Park, M. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H. Hwang, / 2013 IEEE International Electron Devices Meeting
119
Selector-less ReRAM with an Excellent Non-Linearity and Reliability by the Band-Gap Engineered Multi-Layer Titanium Oxide and Triangular Shaped AC Pulse / S. Lee, D. Lee, J. Woo, E. Cha, J. Song, J. Park, H. Hwang, / 2013 IEEE International Electron Devices Meeting
118

BEOL Compatible (300oC) TiN/TiOx/Ta/TiN 3D nanoscale (~10nm) IMT Selector / D. Lee, J. Park, S. Park, J. Woo, K. Moon, E. Cha, S. Lee, J. Song, Y. Koo, H. Hwang, / 2013 IEEE International Electron Devices Meeting 

117
Neuromorphic Speech Systems Using Advanced ReRAM-Based Synapse / S. Park, A.M. Sheri, J. Kim, J. Noh, J.-W. Jang*, M. Jeon, B.-G. Lee, B.H. Lee, B.H. Lee, H. Hwang, / 2013 IEEE International Electron Devices Meeting
116

Multi-layer tunnel barrier (Ta2O5/TaO x/TiO2) engineering for bipolar RRAM selector applications  / Jiyong Woo, Wootae Lee, Sangsu Park, Seonghyun Kim, Daeseok Lee, Godeuni Choi, Euijun Cha, Ji hyun Lee, Woo young Jung, Chan gyung Park, and Hyunsang Hwang, / 2013 Symposia on VLSI Technology and Circuits 

115
RRAM-based Synapse for Neuromorphic System with Pattern Recognition Function /  S. Park, H. Kim, M. Choo, J. Noh, A. Sheri, S. Jung, K. Seo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee*, G. Choi*, J. Woo*, E. Cha*, J. Jang*, C. Park, M.Jeon, B. Lee, B.H. Lee, H. Hwang* / 2012 IEEE International Electron Devices Meeting
114
Ultrathin (<10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications / S. Kim, X. Liu, J. Park, S. Jung, W. Lee, J. Woo, J. Shin, G. Choi, C. Cho, S. Park, D. Lee, E.-j. Cha, B.-H. Lee, H.D. Lee, S.G. Kim, S. Jung, H. Hwang / 2012 IEEE Symposium on VLSI Technology and Circuits
113

Varistor-type Bidirectional Switch (JMAX>107A/cm2, Selectivity~104) for 3D Bipolar Resistive Memory Arrays / W. Lee, J. Park, J. Shin, J. Woo, S. Kim, G. Choi, S. Jung, S. Park, D. Lee, E. Cha, H.D. Lee*, S.G. Kim*, S. Chung*, H. Hwang / 2012 IEEE Symposium on VLSI Technology and Circuits

112
Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility / S. Jung, J. Kong, S. Song, K. Lee, T. Lee, H. Hwang, and S. Jeon / 17th Conference on "Insulating Films on Semiconductors"
(INFOS 2011) (2011.06)