Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (>1011) and Low Drift Characteristics / J. Lee; S. H. Kim; S. Lee; S. Ban; S. Heo; D. Lee; O. Mosendz*; H. Hwang / 2022 IEEE Symposium on VLSI Technology & Circuits

 

High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET / S. Heo, J. Lee, S. Lee, S. Lee, C. Lee, R. Baek, H. Hwang / 2021 IEEE International Electron Devices Meeting(67th Annual IEEE International Electron Devices Meeting)

 

Hardware Neural Network using Hybrid Synapses via Transfer Learning: WOx Nano-Resistors and TiOx RRAM Synapse for Energy-Efficient Edge-AI Sensor / W. Choi, M. Kwak, S. Heo, K. Lee, S. Lee and H. Hwang / 2021 IEEE International Electron Devices Meeting(67th Annual IEEE International Electron Devices Meeting) 

Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of Pr0.7Ca0.3MnO3-x ECRAM Synapse Device for Hardware Neural Network / C. Lee, M. Kwak, W. Choi, S. Kim, H. Hwang / 2021 IEEE International Electron Devices Meeting(67th Annual IEEE International Electron Devices Meeting)

OTS-Based Analog-to-Stochastic Converter for Fully-Parallel Weight Update in Cross-Point Array Neural Networks / M. Kwak, S. Lee, W. Choi, C. Lee, S. Kim and H. Hwang / 2021 Symposia on VLSI Technology and Circuits 

Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx Channel for High Density Neuromorphic System /  C. Lee, W. Choi, M. Kwak, S. Kim and H. Hwang / 2021 Symposia on VLSI Technology and Circuits 

Mg-Te OTS Selector with Low Ioff ( < 100 pA), Fast Switching Speed (τd = 7 ns), and High Thermal Stability (400 °C / 30min) for X-Point Memory Applications / S. Lee, J. Lee, S. Kim, D. Lee, D. Lee and H. Hwang / 2021 Symposia on VLSI Technology and Circuits 

Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 10⁹ and High Endurance of 10⁹ Cycles / Writam Banerjee, Ilya V. Karpov*, Ashish Agrawal*, Seonghun Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, Hyunsang Hwang / 2020 IEEE International Electron Devices Meeting 

Ultra-thin <10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff <1nA) and Ireset <1nA) for 3D Storage Class Memory / Sung, C., Song, J., Lee, D., Lim, S., Kwak, M., Hwang, H. / 2019 Symposia on VLSI Technology and Circuits.  

Te-Based Binary OTS Selectors with Excellent Selectivity (>10⁵), Endurance (>10⁸) and Thermal Stability (>450 °C) / J. Yoo, Y. Koo, S. A. Chekol, J. Park, J. Song, H. Hwang / 2018 Symposia on VLSI Technology and Circuits.

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time /  J. Park, D. Lee, J.M. Yoo and H. Hwang / 2017 IEEE International Electron Devices Meeting (IEDM) 

Study on Insulator - metal transition characteristics of NbO2 for selector device / Jaehyuk Park, Euijun Cha and Hyunsang Hwang / Non-Volatile Memory Technology Symposium 2017(NVMTS 2017) 

Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors / Jeonghwan Song, Jaehyuk Park, Kibong Moon, Jiyong Woo, Seokjae Lim, Jongmyung Yoo, Dongwook Lee, and Hyunsang Hwang / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 

Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang, / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 

Full Chip Integration of 3-D Cross-Point ReRAM with Leakage-Compensating Write Driver and Disturbance-Aware Sense Amplifier / Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-moon Choi, Soon-chan Kwon, Ho-joon Kim, Hyun-suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-won Kwon, Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits 

Te-Based Amorphous Binary OTS Device with Excellent Selector Characteristics for X-point Memory  / Yunmo Koo, Kyungjoon Baek, and Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits

High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sangho Oh,  Hyunsang Hwang,  / 2015 IEEE International Electron Devices Meeting (2015 IEDM) 

Oxide based nanoscale analog synapse device for neural signal recognition system / Daeseok Lee, Jaesung Park, Kibong Moon, Junwoo Jang, Sangsu Park, and Hyunsang Hwang, / 2015 IEEE International Electron Devices Meeting (2015 IEDM) 

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element / Burr, G.W. ,  Shelby, R.M.,  Di Nolfo, C.,  Jang, J.W.,  Shenoy, R.S.,  Narayanan, P.,  Virwani, K.,  Giacometti, E.U.,  Kurdi, B.,  Hwang, H. / 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 

Electrical and Reliability Characteristics of a Scaled (~30nm) Tunnel Barrier Selector (W/Ta₂O₅/TaO_x/TiO₂/TiN) with Excellent Performance (J_MAX > 10⁷A/cm²) / Jiyong Woo, Jeonghwan Song, Kibong Moon, Ji hyun Lee, Euijun Cha, Amit Prakash, Daeseok Lee, Sangheon Lee, Jaesung Park, Yunmo Koo, Chan gyung Park, Hyunsang Hwang / 2014 Symposia on VLSI Technology and Circuits