Quantitative Analysis and Characterization of Sidewall Defects in InGaN-Based Blue Micro-LEDs / Jeonghyeon Park, Won Seok Cho, Hojung Jang, Jawon Kim, Chuljong Yoo, Buem Joon Kim, Junseok Jeong, Jong Won Lee, Hyunsang Hwang, Jong Kyu Kim / ACS Applied Electronic Materials, 6(11), 8377–8383 (202411) 

Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source / Sunhyeong Lee, Chuljun Lee, Ohhyuk Kwon, Seongjae Heo, Hyunsang Hwang / Applied Physics Letters, 125(18), 182105 (202410) 

Enhancing Selector-Only Memory Reliability Through Multi-Step Write Pulse / Yoori Seo, Sanghyun Ban, Jangseop Lee, Dongmin Kim, Laeyong Jung, Hyunsang Hwang / IEEE Electron Device Letters, 45(12), 2383–2386 (202412) 

Mg-Ion-Based Electrochemical Synapse With Superior Retention / Heebum Kang, Kyumin Lee, Seungkwon Hwang, Hyunsang Hwang / IEEE Electron Device Letters, 45(12), 2557–2560 (202412) 

Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf₁₋ₓZrₓO₂ in a Nanolaminate Structure / Hojung Jang, Alireza Kashir, Tony Schenk, Mostafa Habibi, Martin Schuster, Seungyeol Oh, Stefan Müller, Hyunsang Hwang / ACS Applied Materials & Interfaces, 16(41), 55627–55636 (202410)​

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher-Temperature Forming Technique / Jangseop Lee, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / physica status solidi (RRL) – Rapid Research Letters, 18(10), 2300412 (202410) 

Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-NAND Memory Applications / Geonhui Han, Jongseon Seo, Kyumin Lee, Dongmin Kim, Yoori Seo, Jinwoo Lee / IEEE Transactions on Electron Devices, 71(12), 7970–7977 (202412) 

Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode / Kyumin Lee, Sang-Ho Oh, Hojung Jang, Sunhyeong Lee, Byeong-Joo Lee, Hyunsang Hwang / IEEE Electron Device Letters, 45(11), 2078–2081 (202411) 

Excellent Endurance (>10¹³) of Charge Trap Memory Based on HₓWO₃ Charge Trap Layer With Shallow Trap Level Using Hydrogen Spillover / Geonhui Han, Jaeseon Kim, Youngdong Kim, Jongseon Seo, Donghwa Lee, Hyunsang Hwang / IEEE Electron Device Letters, 45(10), 1804–1807 (202410) 

Enhanced Memory Window and Excellent Endurance in FeFET With Ultrathin 2DEG Oxide Channel / Jongseon Seo, Jiho Kim, Geonhui Han, Laeyong Jung, Hojung Jang, Ohhyuk Kwon / IEEE Electron Device Letters, 45(10), 1792–1795 (202410) 

3D Stackable Vertical-Sensing Electrochemical Random-Access Memory Using Ion-Permeable WS₂ Electrode for High-Density Neuromorphic Systems / Kyumin Lee, Seungkwon Hwang, Dongmin Kim, Jongwon Yoon, Jung-Dae Kwon, Yonghun Kim, Hyunsang Hwang / Advanced Functional Materials, 34(27), 2313802 (202403)​​

Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source / Wooseok Choi, Ohhyuk Kwon, Jangseop Lee, Seungyeol Oh, Seongjae Heo, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / Applied Physics Reviews, 11(2), 021323 (202406) 

Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device / Jangseop Lee, Yoori Seo, Sanghyun Ban, Dong Gwan Kim, Yu Bin Park, Tae Hoon Lee, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(5), pp. 3351–3357 (202405) 

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation / Ohhyuk Kwon, Seongjae Heo, Dongmin Kim, Jiho Kim, Hyunsang Hwang / Nanotechnology, 35(10), 105203 (202404) 

3D Stackable Vertical-Sensing Electrochemical Random-Access Memory Using Ion-Permeable WS₂ Electrode for High-Density Neuromorphic Systems / Kyumin Lee, Seungkwon Hwang, Dongmin Kim, Jongwon Yoon, Jung-Dae Kwon, Yonghun Kim, Hyunsang Hwang / Advanced Functional Materials, 2313802 (202403) 

Variability and Reliability Study of Nano-Scale Hf_0.5Zr_0.5O₂ Ferroelectric Devices Using O₃ Treatment / Hojung Jang, Alireza Kashir, Seungyeol Oh, Kyumin Lee, Laeyong Jung, Mostafa Habibi, Tony Schenk, Hyunsang Hwang / IEEE Electron Device Letters, 45(3), pp. 344–347 (202403) 

Enhanced ON/OFF Ratio (4 × 10⁵) and Robust Endurance (> 10¹⁰) in an InGaZnO/Hf_xZr₁-_xO₂Ferroelectric Diode via Defect Engineering / Laeyong Jung, Seungyeol Oh, Hojung Jang, Kyumin Lee, Wooseok Choi, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(3), pp. 2238–2242 (202403) 

Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications / Geonhui Han, Kyumin Lee, Dongmin Kim, Yoori Seo , Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang / IEEE Electron Device Letters, 45(2), pp. 192–195 (202402) 

High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis / Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Geonhui Han, Hyunsang Hwang / Nanotechnology, 35(2), 025205 (202401)

Accurate Evaluation of High-k HZO/ZrO₂Films by Morphotropic Phase Boundary / Seungyeol Oh, Hojung Jang, Hyunsang Hwang / IEEE Electron Device Letters, 45(1), pp. 28–31 (202401)