Semiconductor Integrated Device & Process Lab.


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CMOS Compatible Low-Power Volatile Atomic Switch for Steep-Slope FET Devices / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang / Applied Physics Letters  113(3),033501 (201807) 


Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices / Jongmyung Yoo, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 29(36),365707 (201807) 

Ultrasensitive artificial synapse based on conjugated polyelectrolyte  / Wentao Xu, Thanh Luan Nguyen, Young-Tae Kim, Christoph Wolf, Raphael Pfattner, Jeffrey Lopez, Byeong-Gyu Chae, Sung-Il Kim, Moo Yeol Lee, Eul-Yong Shin, Yong-Young Noh, Joon Hak Oh, Hyunsang Hwang, Chan-Gyung Park, Han Young Woo, Tae-Woo Lee /  Nano Energy   48, pp. 575-581 (201806)

Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications / Andrea Padovani, Jiyong Woo, Hyunsang Hwang, Luca Larcher  /  IEEE Electron Device Letters   39(5), pp. 672-675  (201805)

Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system / Changhyuck Sung, Seokjae Lim, Hyungjun Kim, Taesu Kim, Kibong Moon, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang / Nanotechnology 29(11),115203 (201803) 
Additional hardening in harmonic structured materials by strain partitioning and back stress / Hyung Keun Park, Kei Ameyama, Jongmyung Yoo, Hyunsang Hwang, Hyoung Seop Kim /   Materials Research Letters   6(5), pp. 261-267  (201802)

Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications / Jeonghwan Song, Jiyong Woo, Seokjae Lim, Solomon Amsalu Chekol, and Hyunsang Hwang / IEEE Electron Device Letters 38(11), pp. 1532-1535 (201711)


Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices / Jeonghwan Song, Jiyong Woo, Jongmyung Yoo, Solomon Amsalu Chekol, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / IEEE Transactions on Electron Devices 64(11), pp.4763-4767 (201711)


Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices / Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 111(6),063109 (201710)


Excellent Threshold Selector Characteri​stics of Cu2S-based Atomic Switch Device / Seokjae Lim, Jiyong Woo, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(9), pp. 586-588 (201710)


Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements / Jiyong Woo, Dongwook Lee, Yunmo Koo, Hyunsang Hwang / Microelectronic Engineering 182(5) pp. 42-45 (201710)


Reduced off-current of NbO2 by thermal oxidation of polycrystalline Nb wire / Solomon Amsalu Chekol, Jeonghwan Song, Jaehyuk Park, Euijun Cha, Seokjae Lim, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(9), pp. 641-643 (201709)


Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications / Jiyong Woo, Andrea Padovani, Kibong Moon, Myounghun Kwak, Luca Larcher, and Hyunsang Hwang / IEEE Electron Device Letters 38(9), pp. 1220-1223 (201709)


Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism / Byeong-Gyu Chae, Jae-Bok Seol,* Jeong-Hwan Song, Kyungjoon Baek, Sang-Ho Oh, Hyunsang Hwang, and Chan-Gyung Park / Advanced Materials 29(30),1701752 (201708)


Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems / Kibong Moon, Myounghoon Kwak, Jaesung Park, Dongwook Lee, and Hyunsang Hwang / IEEE Electron Device Letters 38(8), pp. 1023-1026 (201708)


Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation / Jaehyun Seo, Sangheon Lee, Kwangmin Kim, Sooeun Lee, Hyunsang Hwang, and Byungsub Kim / IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25(6),7840076, pp. 1821-1830 (201706) 


Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application / Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov & Hyunsang Hwang / Scientific Reports 7(1), 4068 (201706)​


Effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM / Changhyuck Sung, Jeonghwan Song, Jiyong Woo, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(7), pp. 440-442 (201706)


HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications / Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo and Hyunsang Hwang / IEEE Electron Device Letters 38(6), pp. 732-735 (201706)


Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application / Yunmo Koo, Sangmin Lee, Seonggeon Park, Minkyu Yang, and Hyunsang Hwang / IEEE Electron Device Letters 38(5),7883863, pp. 568-571 (201705)