Semiconductor Integrated Device & Process Lab.

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Journals

270

A nitrogen-treated memristive device for tunable electronic synapses / Sangsu Park, Manzar Siddik, Jinwoo Noh, Daeseuk Lee, Kibong moon, Jiyong Woo, Byoung Hun Lee, and Hyunsang Hwang / Semiconductor Science and Technology 29(10), pp. 104006-104010(5) (201409) 

269
Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Jaesung Park and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201409)
268
Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory  / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Hyunsang Hwang /  Journal of Electronic Materials 43 (9), pp. 3635-3639 (201409)
267
Non-linear I-V characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM  / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Behnoush Attarimashalkoubeh, Jeonghwan Song, Sangheon Lee, Kibong Moon, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201407)
266
Effects of Ti buffer layer on retention and electrical characteristics of Cu-based conductive-bridge random access memory (CBRAM)  / Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jeonghwan Song, Jiyong Woo, Saiful Haque Misha, Nusrat Tamanna, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P120-P122 (201407)
265
Access devices for 3D crosspoint memory / Geoffrey W. Burr, Rohit S. Shenoy, Kumar Virwani, Pritish Narayanan, Alvaro Padilla, and Bulent Kurdi, Hyunsang Hwang, / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  32(4), 040802-1~23 (201407)
264

Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse / Ahmad Muqeem Sheri, Hyunsang Hwang, Moongu Jeon, Byung-geun Lee / IEEE Transactions on Industrial Electronics 61(6), pp.2933-2941 (201406) 

263
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Saiful Haque Misha, Amit Prakash, and Hyunsang Hwan / IEEE Electron Device Letters 35 (6), 6800048, pp. 636-638 (201406)
262

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures  / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Japanese Journal of Applied Physics  53 (6), 068007 (201405) 

261

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, / Applied Physics Letters 104(8), 083507 (201402) 

260

Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory / Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang / Applied Physics Letters 104(5), 052108 (201402) 

259

Optimized Lightning-rod Effect to Overcome Trade-off between Switching Uniformity and On/off Ratio in ReRAM / Daeseok Lee, Jeonghwan Song, Jiyong Woo, Jaesung Park, Sangsu Park, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters VOL. 35, NO. 2, pp.214-216 (201402) 

258

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-point Access Device Application / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 35(1), pp. 60-62 (201401) 

257

Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 34 (12), pp. 1512-1514 (2013.12) 

256

Highly reliable resistive switching without an initial forming operation by defect engineering / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Jeonghwan Song, Kibong Moon, Yunmo Koo, Behnoush Attari, Nusrat Tamanna, Misha Saiful Haque, and Hyunsang Hwang / IEEE Electron Device Letters 34 (12), pp. 1515-1517 (2013.12) 

255

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / Applied Physics Letters  103 (20) , art. no. 202113  (2013.11) 

254
Defect engineering using bi-layer structure in filament type ReRAM / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangsu Park, Sangheon Lee, Jaesung Park, and Hyunsang Hwang / IEEE Electron Device Letters 34 (10) , art. no. 6594832 , pp. 1250-1252 (2013.10)
253
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device / Sangsu Park, Jinwoo Noh, Myung-lae Choo, Sheri Ahmad Muqeem, Man Chang, Young-Bae Kim, Kim Chang Jung, Moongu Jeon, Byung-Geun Lee, Hyunsang Hwang, Lee Byoung Hun, / Nanotechnology 24 (38) , art. no. 384009 (2013.09)
252
Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM  / Daeseok Lee, Jiyong Woo, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 385-388 (2013.09)
251
Selector-less RRAM with non-linearity of device for cross-point array applications  / Jiyong Woo, Daeseok Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 360-363 (2013.09)