Semiconductor Integrated Device & Process Lab.

Journals

Home Publications Journals

Journals

264

Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse / Ahmad Muqeem Sheri, Hyunsang Hwang, Moongu Jeon, Byung-geun Lee / IEEE Transactions on Industrial Electronics 61(6), pp.2933-2941 (201406) 

263
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Saiful Haque Misha, Amit Prakash, and Hyunsang Hwan / IEEE Electron Device Letters 35 (6), 6800048, pp. 636-638 (201406)
262

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures  / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Japanese Journal of Applied Physics  53 (6), 068007 (201405) 

261

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, / Applied Physics Letters 104(8), 083507 (201402) 

260

Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory / Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang / Applied Physics Letters 104(5), 052108 (201402) 

259

Optimized Lightning-rod Effect to Overcome Trade-off between Switching Uniformity and On/off Ratio in ReRAM / Daeseok Lee, Jeonghwan Song, Jiyong Woo, Jaesung Park, Sangsu Park, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters VOL. 35, NO. 2, pp.214-216 (201402) 

258

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-point Access Device Application / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 35(1), pp. 60-62 (201401) 

257

Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 34 (12), pp. 1512-1514 (2013.12) 

256

Highly reliable resistive switching without an initial forming operation by defect engineering / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Jeonghwan Song, Kibong Moon, Yunmo Koo, Behnoush Attari, Nusrat Tamanna, Misha Saiful Haque, and Hyunsang Hwang / IEEE Electron Device Letters 34 (12), pp. 1515-1517 (2013.12) 

255

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / Applied Physics Letters  103 (20) , art. no. 202113  (2013.11) 

254
Defect engineering using bi-layer structure in filament type ReRAM / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangsu Park, Sangheon Lee, Jaesung Park, and Hyunsang Hwang / IEEE Electron Device Letters 34 (10) , art. no. 6594832 , pp. 1250-1252 (2013.10)
253
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device / Sangsu Park, Jinwoo Noh, Myung-lae Choo, Sheri Ahmad Muqeem, Man Chang, Young-Bae Kim, Kim Chang Jung, Moongu Jeon, Byung-Geun Lee, Hyunsang Hwang, Lee Byoung Hun, / Nanotechnology 24 (38) , art. no. 384009 (2013.09)
252
Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM  / Daeseok Lee, Jiyong Woo, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 385-388 (2013.09)
251
Selector-less RRAM with non-linearity of device for cross-point array applications  / Jiyong Woo, Daeseok Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 360-363 (2013.09)
250
Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing  / Se-I Oh, Godeuni Choi, Hyunsang Hwang, Wu Lu, Jae-Hyung Jang, / IEEE Transactions on Electron Devices  60 (8) , art. no. 6547707 , pp. 2537-2541 (2013.08)
249

Threshold-Switching Characteristics of a Nanothin-NbO2-layer-based Pt/NbO2/Pt stack for Use in Cross-point-type Resistive Memories / Seonghyun Kim, Jubong Park, Jiyong Woo, Chunhum Cho, Wootae Lee, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Byoung Hun Lee, Hyunsang Hwang, / Microelectronic Engineering 107 , pp. 33-36 (2013.07) 

248

Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications / Jiyong Woo, Seonghyun Kim, Wootae Lee, Daeseok Lee, Sangsu Park, Godeuni Choi, Euijun Cha, Hyunsang Hwang,  / Applied Physics Letters  102 (12) , art. no. 122115 (2013.03) 

247

Effects of high-pressure annealing on random telegraph signal noise characteristic of source follower block in CMOS image sensor / Hyuk-Min Kwon, In-Shik Han, Sung-Kyu Kwon, Jae-Hyung Jang, Ho-Young Kwak, Woon-Il Choi, Man-Lyun Ha, Ju-Il Lee, Hyun-sang Hwang, and Hi-Deok Lee / IEEE Electron Device Letters 34 (2) , art. no. 6407727 , pp. 190-192 (2013.02) 

246

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices / Xinjun Liu, Sharif Md. Sadaf, Sangsu Park, Seonghyun Kim, Euijun Cha, Daeseok Lee, Gun-Young Jung, and Hyunsang Hwang / IEEE Electron Device Letters 34 (2) , art. no. 6410339 , pp. 235-237 (2013.02) 

245

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications  / Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters 6(11), pp.454-456 (201211)