Characteristics of heavily doped p⁺ / n ultrashallow junction prepared by plasma doping and laser annealing / Sungkweon Baek, Sungho Heo, Haejung Choi, and Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (1), pp. 257-261 (2005.01.21)

Investigation of the initial stage of growth of HfO₂ films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon / Applied Physics Letters 86 (3), art. no. 031906, pp. 1-3 (2005.01.17)

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Applied Physics Letters 86 (3), art. no. 032104, pp. 1-3 (2005.01.17)

Low-temperature-activated bismuth ion-implanted silicon n+/p junction / Shahram Ghanad Tavakoli, Sungkweon Baek and Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (1 A), pp. 141-142 (2005.01.11)

Effect of capacitance-voltage sweep on the flat-band voltage of metal-oxide-semiconductor device with high-k gate dielectric / Hyundoek Yang, Yunik Son, Hyejung Choi, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7), pp. L235-L237 (2005.01)

The HfSi_xO_y interfacial layer effect on improving electrical characteristics of ultrathin high-k TiO₂ gate dielectric / Hyunjun Sim, Chandan B. Samantaray, Hyunsang Hwang / Electrochemical and Solid-State Letters 8 (1), pp. F5-F7 (2005.01)​

Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO₂ as Charge-Trapping Layer and Al₂O₃ as Blocking Layer / Sangmoo Choi, Myungjun Cho, Chandan B. Samantaray, Sanghun Jeon, Chungwoo Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 43 (7 A), pp. L882-L884 (2004.07.01)

Effect of Low Temperature Annealing Prior to Laser Annealing of an Ultrashallow n⁺/p Junction / Taesung Jang, Sungkweon Baek, Hyunsang Hwang / Journal of the Electrochemical Society 149 (12), pp. G661-G663 (2002.12)

Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance–Voltage Analysis / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5974-5975 (2002.10.15)

Electrical and Reliability Characteristics of an Ultrathin TaOxNy Gate Dielectric Prepared by O3 Annealing / Hyungsuk Jung, Hyunjun Sim, Kiju Im, Dooyoung Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 A), pp. 2221-2222 (2001.04)

Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes / Chul Huh, Sang-Woo Kim, Hyun-Soo Kim, Hyun-Min Kim, Hyunsang Hwang, Seong-Ju Park / Applied Physics Letters 78 (12), pp. 1766-1768 (2001.03.19)

Thermally oxidized GaN film for use as gate insulators / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19 (2), pp. 579-581 (2001.03)

Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes  / Hyunsoo Kim, Dong-Joon Kim, Seong-Ju Park, Hyunsang Hwang / Journal of Applied Physics 89 (2), pp. 1506-1508 (2001.01.15)