Semiconductor Integrated Device & Process Lab.

Invited talk

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Invited Talk

9
Overview of Materials and Process Aspect of Cross-point RRAM / Hyunsang Hwang / SEMICON Korea 2011, 2011.01.26(Invited)
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Resistive switching characteristics of metal oxide for nonvolatile memory applications /  R. Dong, M. Hasan, H. J. Choi, D. S. Lee, M. B. Pyun, D. J. Seong,Hyunsang Hwang / The 9th International Conference on Solid-State and Integrated-Circuit  Technology(ICSICT 2008) , 2008.10.20-23 (Invited)
7
Resistance switching characteristics of doped metal oxide for nonvolatile memory applications / D.S. Lee, W. Xiang, R. Dong, D.J. Seong and H. Hwang / 38th IEEE Semiconductor Interface Specialists Conference, 4.1, 2007.12.6-8 (Invited)
6
Resistance switching characteristics of metal oxides for nonvolatile memory application / Rui Dong, Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Seokjun Oh, Hyejung Choi and Hyunsang Hwang / 2007 211th Meeting of The Electrochemical Society, 2007.05.06-11 (Invited)
5
Effect of high-pressure deuterium annealing on electrical and reliability characteristics of high-K MOSFET / Hokyung Prak, Musarrat Hasan, Man Chang, Minseok Jo and Hyunsang Hwang / The 12th Workshop on Gate Stack Technology and Physics, 2007.02.02-03 (Invited)
4
Effect of Surface Treatment on Resistance Switching Characteristics of Schottky Junction for Nonvolatile Memory Application / Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Rui Dong, Sekojoon Oh and Hyunsang Hwang / 2006 AIST International Workshop on Functional Oxides, 2006. 09. 20-21 (Invited)
3
Ultra-shallow Junction Formed by Plasma Doping and Laser Annealing/ Sungho Heo and Hyunsang Hwang/ 2006 IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2006. 10. 10-12 (Invited)
2
Resistance Switching Characteristics of Metal Oxide and Schottky Junction for Nonvolatile Memory Applications/ Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Rui Dong, Sekojoon Oh, Hyejung Choi and Hyunsang Hwang/ IEEE 2006 Non-Volatile Memory Technology Symposium, 2006. 11. 6-8 (Invited)
1
Effect of high pressure hydrogen annealing on electrical characteristics of MOSFETs with high-k gate dielectric / H.Park, M. chang, H. Yang, M.S.Rahman, M.Cho, B.H.Lee, R. Choi and Hyunsang Hwang / 2005 International Workshop on Advanced Gate Stack Technology 2005.09.26-28 (Invited)
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