Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET / Minseok Jo, Hokyung Park, Joon-myoung Lee, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, and Hyunsang Hwang / IEEE Electron Device Letters 29 (4), pp. 399-401 (2008.04) 

A Materials Approach to Resistive Switching Memory Oxides / M. Hasan, R. Dong, D. S. Lee, D. J. Seong, H. J. Choi, M.B. Pyun, and H. Hwang / Journal of Semiconductor Technology and Science 8 (1) pp. 66-79 (2008.03.30)

Dual-Metal-Gate Work Function by Controlling Metal Gate Thickness and Composition / Musarrat Hasan, Hokyong Park, Joon-Myoung Lee, and Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (5), pp. H124-H126 (2008.03.03)

High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices / Sung-Man Cho, Jeong-Hyun Lee, Man Chang, Min-Seok Jo, Hyun-Sang Hwang, Jong-kon Lee, Sung-Bo Hwang, and Jong-Ho Lee/ IEEE Transactions on Device and Materials Reliability 8 (1), art. no. 4399958, pp. 153-158 (2008.03)

Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO₂/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor / Hokyung Park, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, and Hyunsang Hwang / Japanese Journal of Applied Physics 47 (1), pp. 136-138  (2008.01.18)

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO₂ MOSFET Devices / Hokyung Park, Minseok Jo, Hyejung Choi, Musarrat Hasan, Rino Choi, Paul D. Kirsch, Chang Young Kang, Byoung Hun Lee, Tae-Wook Kim, Takhee Lee, and Hyunsang Hwang / IEEE Electron Device Letters 29 (1), pp. 54-56 (2008.01)

Ultrashallow (<10 nm)p⁺/n junction formed by B₁₈H₂₂ cluster ion implantation and excimer laser annealing / Sungho Heo, Hyunsang Hwang, H. T. Cho, and W. A. Krull / Applied Physics Letters 89 (24), art. no. 243516 (2006.12.11)

Electrical characteristics of LaAlO₃ gate dielectrics prepared by high-pressure hydrogen post-deposition annealing / Musarrat Hasan, Min Seok Jo, Md. Shahriar Rahman, Hyejong Choi, Sungho Heo, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (11), pp. F77-F79 (2006.11) 

Electrical properties of atomic layer deposited HfO₂ gate dielectric film using D₂O as oxidant for improved reliability / Taeho Lee, Han-Kyoung Ko, Jinho Ahn, In-Sung Park, Hyunjun Sim, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (9 A), pp. 6993-6995 (2006.09.07) 

Nano-scale memory characteristics of silicon nitride charge trapping layer with silicon nanocrystals / Hyejung Choi, Sangmoo Choi1, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (29-32), pp. L807-L809 (2006.08.11) 

Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO₂ gated nMOSFETs / Hokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, Chadwin D. Young, Gennadi Bersuker, Jack C. Lee, Hyunsang Hwang / IEEE Electron Device Letters 27 (8), pp. 662-664 (2006.08) 

Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO₂ film / Chel-Jong Choi, Moon-Gyu Jang, Yark-Yeon Kim, Myung-Sim Jeon, Byoung-Chul Park, Seong-Jae Lee, Ran-Ju Jung, Hyun-doek Yang, Man Chang, Hyun-sang Hwang / Electrochemical and Solid-State Letters 9 (7), pp. G228-G230 (2006.07) 

Impact of metal work function on memory properties of charge-trap Flash memory devices using Fowler-Nordheim P/E mode / Sanghun Jeon, Jeong Hee Han, Junghoon Lee, Sangmoo Choi, Hyunsang Hwang, Chungwoo Kim / IEEE Electron Device Letters 27 (6), pp. 486-488 (2006.06) 

ScN_x gate on atomic layer deposited HfO₂ and effect of high-pressure wet post deposition annealing / Hyundoek Yang, Dongsoo Lee, M. S. Rahman, M. Hasan, Hyung-Seok Jung, Hyunsang Hwang / IEEE Electron Device Letters 27 (6), pp. 435-438 (2006.06) 

Formation of a self-aligned hard mask using hydrogen silsesquioxane / Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Hyunsang Hwang, Won-ju Cho / Applied Physics Letters 88 (15), art. no. 153502 (2006.04.10) 

Sub-15 nm n⁺/p -Germanium shallow junction formed by PH₃ plasma doping and excimer laser annealing / Sungho Heo, Sungkweon Baek, Dongkyu Lee, Musarrat Hasan, Hyungsuk Jung, Jongho Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. 136-137 (2006.04) 

Enhanced reliability and performance of high-k MOSFET by two-step annealing / M. Shahriar Rahman, Hokyung Park, Man Chang, Dongsoo Lee, Byoung Hun Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G127-G129 (2006.04)

Electrical characteristics of ultrashallow p⁺/n junction formed by BF₃ plasma doping and two-step annealing process / Dongkyu Lee, Sungho Heo, Changhee Cho, G. H. Buh, Tai-su Park, Jongryeol Yoo, Yugyun Shin, and Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G121-G123 (2006.04) 

Reversible resistive switching of SrTiO_x thin films for nonvolatile memory applications / Dooho Choi, Dongsoo Lee, Hyunjun Sim, Man Chang, Hyunsang Hwang / Applied Physics Letters 88 (8) art. no. 082904 (2006.02.20) 

Effective work function of scandium nitride gate electrodes on SiO₂ and HfO₂ / Hyundoek Yang, Sungho Heo, Dongkyu Lee, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (1-3), pp. L83-L85 (2006.01.31)