Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics / Hyunjun Sim, Hyosik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (4 A), pp. 1596-1597 (2003.04.15)

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride / Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, Hyunsang Hwang, Seong-Ju Park, Suk-Ho Choi / Applied Physics Letters 83 (5), pp. 1014-1016 (2003.08.04)

Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 (5), pp. L5-L9 (2003.09)

Improved metal–oxide–nitride–oxide–silicon-engine flash device with high-k dielectrics for blocking layer / Sangmoo Choi, Myungjun Cho, Hyunsang Hwang, Jung Woo Kim / Journal of Applied Physics 94 (8), pp. 5408-5410 (2003.10.15)

Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications / Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 81 (25), pp. 4856-4858 (2002.12.16)

Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001) / Hyo Sik Chang, Hyunsang Hwang, Mann-ho Cho, Hyun Kyung Kim, Dae Won Moon / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1), pp. 165-169 (2004.01)

Thermal stability and decomposition of the HfO2–Al2O3 laminate system / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon, Seok Joo Doh, Jong Ho Lee, Nae-In Lee / Applied Physics Letters 84 (1), pp. 28-30 (2004.01.05)

Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing / Kiju Im, Won-Ju Cho, Chang-Geun Ahn, Jong-Heon Yang, Jihun Oh, Seongjae Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (5 A), pp. 2438-2441 (2004.05.15)

Electrical and Physical Properties of HfO2 Deposited via ALD Using Hf(OtBu)4 and Ozone atop Al2O3 / H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, M.-H. Cho / Electrochemical and Solid-State Letters 7 (6), pp. F42-F44 (2004.06)

Electronic structures of high-k transition metal silicates: first-principles calculations / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Microelectronics Journal 35 (8), pp. 655-658 (2004.08)

Electronic structure and optical properties of barium strontium titanate (BaxSr1−xTiO3) using first-principles method / C.B. Samantaray, H. Sim, H. Hwang / Physica B: Condensed Matter 351 (1-2), pp. 158-162 (2004.08.15)

Ultrashallow p+/n Junction Formation by 0.5–1 keV Ion Implantation / Jihwan Park, Jeong-Youb Lee, Kilho Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 37 (11 SUPPL. B), pp. L1376-L1378 (1998.11.15)

Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide / Jihwan Park, Yun Jun Huh, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 37 (11 SUPPL. B), pp. L1347-L1349 (1998.11.15)

High-quality ultrathin gate oxide prepared by oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Applied Physics Letters 74 (5), pp. 709-710 (1999.02.01)

Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 38 (2 A), pp. L99-L101 (1999.02.01)

Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation / Jihwan Park, Yun-Jun Huh, Hyunsang Hwang / Applied Physics Letters 74 (9), pp. 1248-1250 (1999.03.01)

Effect of statistical process variation of MOSFET on hot carrier lifetime / Hyojune Kim, Hyunsang Hwang / Solid-State Electronics 43 (5), pp. 989-991 (1999.05)

Hot carrier reliability characteristics of a bend-gate MOSFET  / Woosung Lee, Hyunsang Hwang / Solid-State Electronics 44 (6), pp. 1117-1119 (2000.06.01)

Electromigration-induced failure of GaN multi-quantum well light emitting diode / Hyunsoo Kim, Hyundoek Yang, Chul Huh, Sang-Woo Kim, Seong-Ju Park, Hyunsang Hwang / Electronics Letters 36 (10), pp. 908-910 (2000.05.11)

Hot carrier degradation for narrow width MOSFET with shallow trench isolation / Woosung Lee, Hyunsang Hwang / Microelectronics Reliability 40 (1), pp. 49-56 (2000.01.14)