Analysis of interface switching for Nb doped SrTiO₃ single crystal device using complex impedance spectroscopy / Joonmyoung Lee, El Mostafa Bourima, Dongku Shin, Jong-Sook Lee, Dong-jun Seong, Jubong Park, Wootae Lee, Man Chang, Seungjae Jung, Jungho Shin and Hyunsang Hwang, / Current Applied Physics 10 (1 SUPPL. 1), pp. e68-e70 (2010.01)

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO₃: Evidence for the origins of enhanced memory performance / Seungjae Jung, Hyejung Choi, Yongkyu Ju, Man Chang, Minseok Jo, Joonmyoung Lee, Jaesik Yoon, Choongman Lee, Hyunsang Hwang / Applied Physics Letters 95 (24), art. no. 242112 (200912) 

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET / Minseok Jo, Man Chang, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Dong-Jun Seong, Hyunsang Hwang / IEEE Electron Device Letters 30 (11), pp. 1194-1196 (200911) 

Device Performance and Reliability Characteristics of Tantalum-Silicon-Nitride Electrode/Hafnium Oxide n-engine Metal-Oxide-Semiconductor Field-Effect Transistor Depending on Electrode Composition / Hokyung Park , Man Chang, Minseok Jo, Rino Choi, Byoung Hun Lee, Hyunsang Hwang / Japanese Journal of Applied Physics 48 (11), 116506 (200911)

Resistive-Switching Characteristics of Al/Pr_0.7Ca_0.3MnO₃ for Nonvolatile Memory Applications / Dong-Jun Seong, Musarrat Hassan, Hyejung Choi, Joonmyoung Lee, Jaesik Yoon, Ju-Bong Park, Wootae Lee, Min-Suk Oh,  Hyunsang Hwang / IEEE Electron Device Letters 30 (9), pp. 919-921 (200909) 

An electrically modifiable synapse array of resistive switching memory / Hyejung Choi, Heesoo Jung, Joonmyoung Lee, Jaesik Yoon, Jubong Park, Dong-jun Seong, Wootae Lee, Musarrat Hasan, Gun-Young Jung, Hyunsang Hwang / Nanotechnology 20 (34), 345201 (200908) 

A Study of Strain Engineering using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress / Kyong Taek Lee, Chang Yong Kang, Min-Sang Park, Byoung Hun Lee, Ho Kyung Park, Hyun Sang Hwang, Hsing-Huang Tseng, Jammy, R., Yoon-Ha Jeong / IEEE Electron Device Letters 30 (7), pp. 760-762 (200907) 

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications / Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1929-1932 (200907) 

Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO₂ impurity host layer for nonvolatile memory application / Seungjae Jung, Man Chang , Seonghyun Kim, Joonmyung Lee, Chunhum Cho, Choongman Lee, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1812-1814 (200907) 

The impact of Al interfacial layer on resistive switching of La_0.7Sr_0.3MnO₃ for reliable ReRAM applications / Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1933-1935 (200907) 

Data retention characteristics of MANOS-engine flash memory device with different metal gates at various levels of charge injection / Man Chang, Tae-Wook Kim, Joonmyoung Lee, Minseok Jo, Seonghyun Kim, Seungjae Jung, Hyejung Choi, Takhee Lee, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1804-1806 (200907)

Hybrid complementary logic circuits of one-dimensional nanomaterials with adjustment of operation voltage / Gunho Jo, Woong-Ki Hong, Jung Inn Sohn, Minseok Jo, Jiyong Shin, Mark E. Welland, Hyunsang Hwang, Kurt E. Geckeler, Takhee Lee / Advanced Materials 21 (21), pp. 2156-2160 (200906)

One transistor-one resistor devices for polymer non-volatile memory applications / Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Gunuk Wang,Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Advanced Materials 21 (24), pp. 2497-2500 (200906) 

Transient charge trapping and detrapping properties of a thick SiO₂/Al₂O₃ stack studied by short single pulse I_d-V_g / Man Chang, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Sanghun Jeon,  Hyunsang Hwang / Applied Physics Letters 94 (26), 262107 (200906) 

Excellent Switching Uniformity of Cu-Doped MoO_x/GdO_x Bilayer for Nonvolatile Memory Applications / Jaesik Yoon, Hyejung Choi, Dongsoo Lee, Ju-Bong Park, Joonmyoung Lee, Dong-Jun Seong, Yongkyu Ju, Man Chang, Seungjae Jung,  Hyunsang Hwang / IEEE Electron Device Letters 30 (5), pp. 457-459 (200905)

Dependence of the Metal Electrode and Improved Pulse Switching Speed of La_0.7Ca_0.3MnO₃ as a Resistance Change Memory Device / Musarrat Hasan, Rui Dong, Hyejung Choi, Jaesik Yoon, Ju-bong Park, Dong-joon Seong, Hyunsang Hwang / Journal of the Electrochemical Society 156 (4), pp. H239-H242 (200904) 

Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon-engine Flash Memory Devices / Yongkyu Ju, Man Chang, Seungjae Jung, Minseok Jo, JoonMyoung Lee, Jaesik Yoon, Hyunsang Hwang / Japanese Journal of Applied Physics 48 (4 PART 2), 04C065 (200904) 

Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High-k pMOSFETs / Minseok Jo, Man Chang, Seonghyun Kim, Hyung-Suk Jung, Rino Choi,  Hyunsang Hwang  / IEEE Electron Device Letters 30 (3), pp. 291-293 (200903) 

Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications / Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Musarrat Hasan, Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang / IEEE Electron Device Letters 30 (3), pp. 302-304  (200903)

The effect of excimer laser annealing on ZnO nanowires and their field effect transistors / Jongsun Maeng, Sungho Heo, Gunho Jo, Minhyeok Choe, Seonghyun Kim, Hyunsang Hwang, Takhee Lee / Nanotechnology 20 (9), 095203 (200903)