Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ND3 / Hyungshin Kwon, Hyunsang Hwang  / Applied Physics Letters 76 (6), pp. 772-773 (2000.02.07)

Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric / Hyungsuk Jung, Kiju Im, Hyunsang Hwang, Dooyoung Yang / Applied Physics Letters 76 (24), pp. 3630-3631 (2000.06.12)

Characterization of sub-30 nm p+/n junction formed by plasma ion implantation / S. K. Baek, C. J. Choi, T.-Y. Seong, H. Hwang, H. K. Kim, D. W. Moon / Journal of the Electrochemical Society 147 (8), pp. 3091-3093 (2000.08)

Modeling of a GaN-based light-emitting diode for uniform current spreading / Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, Hyunsang Hwang / Applied Physics Letters, 77 (12), pp. 1903-1904 (2000.09.18)

Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5 / Hyungsuk Jung, Kiju Im, Dooyoung Yang, Hyunsang Hwang / IEEE Electron Device Letters, 21 (12), pp. 563-565 (2000.12)

Electrical characteristics of ultra-thin oxynitride gate dielectric prepared by reoxidation of thermal nitride in D2O / Hyungshin Kwon, Inseok Yeo, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters, 39 (4 A), pp. L273-L274 (2000.04.01)

Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Applied Surface Science 239 (1), pp. 101-108 (2004.12.15)

High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices / Sangmoo Choi, Man Jang, Hokyung Park, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim / Applied Physics Letters 85 (26), pp. 6415-6417 (2004.12.27)

Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyunsang Hwang / Materials Science and Engineering B: Solid-State Materials for Advanced Technology 114-115 (SPEC. ISS.), pp. 376-380 (2004.12)

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-engine flash memory devices / Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Hyunsang Hwang / Applied Physics Letters 91 (19), art. no. 192111 (2007.11.05)

Improved Electrical Characteristics of Fully Depleted Ultrathin SOI MOSFETs Annealed in High-Pressure Hydrogen Ambient / Yunik Son, Man Chang, Hokyung Park, Md. Shahriar Rahman, Sungkwon Baek, Hyunsang Hwang / Electrochemical and Solid-State Letters 10 (11), pp. 324-326 (2007.11)

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing / Hokyung Park, Rino Choi, Byoung Hun Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 46 (33-35), pp. L786-L788 (2007.09.07)

Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications / Hyejung Choi, Seung-Jae Jung, Hokyung Park, Joon-Myung Lee, Moonjae Kwon, Man Chang, Musarrat Hasan, Sangmoo Choi, Hyunsang Hwang / Applied Physics Letters 91 (5), art. no. 052905 (2007.07.30)

Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric / Musarrat Hasan, Hokyung Park, Joon-myong Lee, Hyunsang Hwang / Applied Physics Letters 91 (3), art. no. 033512 (2007.07.16)

Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing / Minseok Jo, Man Chang, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 46 (20-24), pp. L531-L533 (2007.06.15)

Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET / Minseok Jo, Hokyung Park, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, Hyunsang Hwang / Microelectronic Engineering 84 (9-10), pp. 1934-1937  (2007.09)

Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology / Musarrat Hasan, Hokyung Park, Joon-myong Lee, Minseak Jo, Hyunsang Hwang / Microelectronic Engineering 84 (9-10), pp. 2205-2208 (2007.09)

Improvement of memory properties for MANOS-engine nonvolatile memory devices with high-pressure wet vapor annealing / Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Sangmoo Choi / Microelectronic Engineering 84 (9-10), pp. 2002-2005 (2007.09)

Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory / Moonjae Kwon, Hyejung Choi, Man Chang, Minseok Jo, Seung-Jae Jung, Hyunsang Hwang / Applied Physics Letters 90 (19), art. no. 193512 (2007.05.07)

Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing / R. Dong, W. F. Xiang, D. S. Lee, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, M. Chang, M. Jo, M. Hasan, Hyunsang Hwang / Applied Physics Letters 90 (18), art. no. 182118 (2007.04.30)