Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111) / Hyunjun Sim, Chandan B. Samantaray, Taeho Lee, Hanwoong Yeom, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (12), pp. 7926-7928 (2004.12.15)

Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications / Hyungsuk Jung, Hyundoek Yang, Kiju Im, Hyunsang Hwang /
Applied Physics Letters 79 (26), pp. 4408-4410 (2001.12.24)

Electrical Characteristics of TiO2/ZrSixOy Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications / Hyunjun Sim, Sanghun Jeon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12), pp. 6803-6804 (2001.12)

Effects of N2O Plasma Surface Treatment on the Electrical and Ohmic Contact Properties of n-engine GaN / Hyunsoo Kim, Nae-Man Park, Ja-Soon Jang, Seong-Ju Park, Hyunsang Hwang / Electrochemical and Solid-State Letters 4 (11), pp. G104-G106 (2001.11)

Electrical characteristics of a Dy-doped HfO2 gate dielectric / Hyelan Lee, Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 79 (16), pp. 2615-2617 (2001.10.15)

Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors / Woohyung Lee, Jeshik Shin, Hyundoek Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A), pp. 5308-5309 (2001.09)

Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature / Wootae Lee, Minseok Jo, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Seungjae Jung, Jungho Shin, Daeseok Lee, Manzar Siddik, Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials 208 (1), pp. 202-205 (2011.01) 

Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 / Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, Hyunsang Hwang / Applied Physics Letters 79 (2), pp. 245-247 (2001.07.09)

Effects of current spreading on the performance of GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 48 (6), pp. 1065-1069 (2001.06)

Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications / Lee, B.H.; Hwang, H.J.; Cho, C.H.; Lim, S.K.; Lee, S.Y.; Hwang, H. / Journal of Nanoscience and Nanotechnology 11(1), pp. 256-261 (2011.01) 

Improved Switching Uniformity and Speed in Filament-engine RRAM Using Lightning Rod Effect  / Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Wootae Lee, Jungho Shin, Hyunsang Hwang / IEEE Electron Device Letters 32 (1), pp. 63-65 (2011.01) 

Filament-engine Resistive Switching in Homogeneous Bi-Layer Pr​_​0.7Ca​_​0.3MnO​_​3 Thin Film Memory Devices  / Xinjun Liu, Kuyyadi P. Biju, El Mostafa Bourim, Sangsu Park, Wootae Lee, Daeseok Lee, Kyungah Seo, Hyunsang Hwang / Electrochemical and Solid-State Letters 14 (1), pp. H9-H12 (2011.01) 

Asymmetric bipolar resistive switching in solution-processed Pt/TiO₂/W devices / Kuyyadi P Biju, XinJun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Hyunsang Hwang / Journal of Physics D: Applied Physics 43 (49), art. no. 495104 (2010.12.15)

Improved resistive switching properties of solution processed TiO₂ thin films / Kuyyadi P. Biju, Xinjun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Jubong Park,  Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (12), pp. H443-H446 (2010.12)

Three-Dimensional Integration of Organic Resistive Memory Devices / Sunghoon Song , Byungjin Cho , Tae-Wook Kim , Yongsung Ji , Minseok Jo ,Gunuk Wang , Minhyeok Choe , Yung Ho Kahng , Hyunsang Hwang , Takhee Lee / Advanced Materials 22 (44), pp. 5048-5052 (2010.11.24)

Effect of ZrO_x/HfO_x bilayer structure on switching uniformity and reliability in nonvolatile memory applications / Joonmyoung Lee, El Mostafa Bourim, Wootae Lee, Jubong Park, Minseok Jo, Seungjae Jung, Jungho Shin, Hyunsang Hwang / Applied Physics Letters 97 (17), art. no. 172105

Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications / Sanghun Jeon, Hyundoek Yang, Dae-Gyu Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (4 B), pp. 2390-2393 (2002.04)

Improved Reliability Characteristics of Ultrathin SiO2 Grown by Low Temperature Ozone Oxidation / Hyo Sik Chang, Sangmoo Choi, Dae Won Moon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5971-5973  (2002.10.15)

Design and fabrication of highly efficient GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 49 (10), pp. 1715-1722 (2002.10)

Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics / Hyunjun Sim, Hyunsang Hwang / Applied Physics Letters 81 (21), pp. 4038-4039 (2002.11.18)