New set/reset scheme for excellent uniformity in bipolar resistive memory  / Jubong Park, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device 32 (3), art. no. 5680582, pp. 228-230  (2011.03) 

Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels  / Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, Hyunsang Hwang / Microelectronic Engineering 88 (3), pp. 273-275 (2011.03) 

TiO_​2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application  / Jungho Shin, Insung Kim, Kuyyadi P. Biju, Minseok Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Hyunsang Hwang / Journal of Applied Physics 109  (3), art. no. 033712 (2011.02.01) 

Nonvolatile resistive switching in Pr_​0.7Ca_​0.3MnO_​3 devices using multilayer graphene electrodes / Wootae Lee, Gunho Jo, Sangchul Lee, Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jungho Shin, Sangsu Park, Takhee Lee, Hyunsang Hwang / Applied Physics Letters 98 (3), art. no. 032105 (2011.01.17) 

Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons / Jongwon Yoon, Woong-Ki Hong, Minseok Jo, Gunho Jo, Minhyeok Choe, Woojin Park, Jung Inn Sohn, Stanko Nedic, Hyungsang Hwang, Mark E. Welland, and Takhee Lee / ACS nano 5 (1), pp. 558-564  (2011.01) 

Electrical characteristics of ultrathin ZrO2 prepared by wet oxidation of an ultrathin Zr-metal layer / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1), pp. 400-405 (2002.01)

Electrical Characteristics of High-k Metal Oxide/SiO2 Stack Gate Dielectric Prepared by Reaction of Metal with SiO2 / Jeshik Shin, Sanghun Jeon, Hyunsang Hwang / Journal of the Electrochemical Society 149 (1), pp. F1-F3 (2002.01)

Effect of Si lattice strain on the reliability characteristics of ultrathin SiO2 on a 4° tilted wafer / Hyo Sik Chang, Sangmu Choi, Hyundoek Yang, Kyung-youl Min, Dae Won Moon, Hyung-Ik Lee, Hyunsang Hwang / Applied Physics Letters 80 (3), pp. 386 (2002.01.21)

Interfacial properties of a hetero-structure YSZ/p-(1 0 0)Si prepared by magnetron sputtering / Sanghun Jeon, Matsuda Takanori, Akira Unno, Kiyotaka Wasa, Yoko Ichikawa, Hyunsang Hwang / Vacuum 65 (1), pp. 19-25 (2002.02.26)

Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions / Sungkweon Baek, Taesung Jang, Hyunsang Hwang / Applied Physics Letters 80 (13), pp. 2272 (2002.04.01)

Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal–oxide–semiconductor gate dielectric applications / Sanghun Jeon, Hyundoek Yang, Hyo Sik Chang, Dae-Gyu Park, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (3), pp. 1143-1145 (2002.05)

Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application / Hyo Sik Chang, Sanghun Jeon, Hyunsang Hwang, Dae Won Moon / Applied Physics Letters 80 (18), pp. 3385-3387 (2002.05.06)

Improved Extrapolation Method of Ultrathin Oxide Thickness Using C–V Characteristics of Metal-Oxide-Semiconductor Device / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 41 (5 B), pp. L549-L551 (2002.05.15)

Electrical Characteristics of ZrO2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications / Sangmoo Choi, Sanghun Jeon, Hyunsang Hwang, Young J. Song, Jung-Wook Lim, Kyu-Hwan Shim, Kyung Wan Park / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (8), pp. 5129-5130 (2002.08)

Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, Nae-Man Park / Applied Physics Letters 81 (7), pp. 1326 (2002.08.12)

Measurement of the physical and electrical thickness of ultrathin gate oxides / H. S. Chang, H. D. Yang, H. Hwang, H. M. Cho, H. J. Lee, D. W. Moon / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5), pp. 1836-1842 (2002.09)

High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon / Sangmoo Choi, Sanghun Jeon, Myungjun Cho, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 42 (2 A), pp. L102-L104 (2003.02.01)

Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications / Sanghun Jeon, Frederick J. Walker, Curtis A. Billman, Rodney A. McKee, Hyunsang Hwang / IEEE Electron Device Letters 24 (4), pp. 218-220 (2003.04)

Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) / Sanghun Jeon, Hyunsang Hwang / Journal of Applied Physics 93 (10 1), pp. 6393-6395 (2003.05.15)

Antimony as a Proper Candidate for Low-Temperature Solid Phase Epitaxially Activated n+/p Junctions / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Electrochemical and Solid-State Letters 7 (10), pp. G216-G218 (2004.10)