Various Threshold Switching device for Integrate and Fire Neuron Applications / Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jaehyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung,  Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1800866, pp.1-7 (201902) 

Synaptic and neuromorphic functions: general discussion / Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Koymen, Michael Kozicki, Yang Li,Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters and Yuchao Yang / Faraday discussions  213, 553-578 (201902)

RRAM-based synapse devices for neuromorphic systems / K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee and H. Hwang / Faraday discussions 213, pp. 421-451 (201902) 

W/WO_3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)

NbO₂-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr_0.7Ca_0.3MnO₃ Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812) 

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr_0.7Ca_0.3MnO₃ Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201812)

Reliable Ge₂Sb₂Te₅‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy / Niloufar Raeis‐Hosseini, Seokjae Lim, Hyunsang Hwang, Junsuk Rho / Advanced Electronic Materials 4(11),1800360 (201811)

Perspective: A review on memristive hardware for neuromorphic computation / Changhyuck Sung,  Hyunsang Hwang, and  In Kyeong Yoo / Journal of Applied Physics  124(15),151903 (201810)

Implementation of Convolutional Kernel Function Using 3-D TiO_x Resistive Switching Devices for Image Processing  / Myonghoon Kwak , Jaesung Park , JiyongWoo , and Hyunsang Hwang / IEEE Transactions on Electron Devices  65(10), 8435959, pp. 4716-4718  (201810) 

Improved Synaptic Behavior of CBRAM using Internal Voltage Divider for Neuromorphic Systems / Seokjae Lim , Myounghoon Kwak , and Hyunsang Hwang / IEEE Transactions on Electron Devices 65(9),8424473, pp. 3976-3981  (201809) 

Modeling and System-Level Simulation for Non-Ideal Conductance Response of Synaptic Devices / Sang-Gyun Gi , Injune Yeo, Myonglae Chu, Kibong Moon , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices  65(9),8424206, pp. 3996-4003   (201809​)

Zn_1−xTe_x Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters / Yunmo Koo, Hyunsang Hwang / Scientific Reports  8(1),11822 (201808) 

Hybrid Selector with Excellent Selectivity and Fast Switching Speed for X-point memory array / Jaehyuk Park , Jongmyung Yoo , Jeonghwan Song , Changhyuck Sung , and Hyunsang Hwang /  IEEE Electron Device Letters  39(8), pp. 1171-1174   (201808) 

C-Te Based Binary OTS Device Exhibiting Excellent Performance and High Thermal Stability for Selector Application / Solomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Changhyuck Sung and Hyunsang Hwang  / Nanotechnology 29(34),345202  (201808)

Steep Slope Field-Effect Transistors with B-Te based Ovonic Threshold Switch Device / Jongmyung Yoo, Donguk Lee, Jaehyuk Park, Jeonghwan Song, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  6(1),8412090, pp. 821-824 (201807) 

Reliable Multivalued Conductance States in TaO_x Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis  / Myoung-Jae Lee , Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung , Chun-Yeol You , Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park  / ACS Applied Materials and Interfaces  10(35), pp. 29757-29765  (201807) 

Improved Synapse Device with MLC and Conductance Linearity using Quantized Conduction for Neuromorphic Systems / Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang /  IEEE Electron Device Letters 39(2),8246549, pp. 312-315  (201802)

CMOS Compatible Low-Power Volatile Atomic Switch for Steep-Slope FET Devices / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang / Applied Physics Letters  113(3),033501 (201807) 

Effect of cation amount in the electrolyte on characteristics of Ag/TiO₂ based threshold switching devices / Jongmyung Yoo, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 29(36),365707 (201807)