Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer / Jangseop Lee, Sangmin Lee, Myonghoon Kwak, Wooseok Choi, Oleksandr Mosendz, Hyunsang Hwang​ / IEEE Electron Device Letters​  43(2), pp. 220-223 (​​202202) 

Hf₁–_xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Stanislav Kamba, Manoj Yadav, Hyunsang Hwang​ / ACS Applied Electronic Materials​ 3(12),5632-5640​ (202112) 

Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang​ / Small​ 17(44),2103543​ ​(202111) 

A CMOS-compatible morphotropic phase boundary / Alireza Kashir, Hyunsang Hwang​ / Nanotechnology​ 32(44),445706​ (202110) 

​Deep Insight into Steep-Slope Threshold Switching with Record Selectivity (>4 × 10¹⁰) Controlled by Metal-Ion Movement through Vacancy-Induced-Percolation Path: Quantum-Level Control of Hybrid-Filament / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, Hyunsang Hwang / Advanced Functional Materials​ 31(37),2104054​ (202109) 

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor / Chuljun Lee, Wooseok Choi, Myunghoon Kwak, Seyoung Kim, Hyunsang Hwang​ / Applied Physics Letters​ 119(10),103503​ (202109) 

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films ​/ Anupam Giri, Manish Kumar, Jaeseon Kim, Monalisa Pal, Writam Banerjee, Revannath Dnyandeo Nikam, Junghyeok Kwak, Minsik Kong, Seong Hun Kim, Kaliannan Thiyagarajan, Geonwoo Kim, Hyunsang Hwang, Hyun Hwi Lee, Donghwa Lee, Unyong Jeong​ / Advanced Materials​ 33(35),2102252​ (202109) 

Improved turn-off speed and uniformity of atomic threshold switch device by agse electrode and bipolar pulse forming / Seungyeol Oh; Seungwoo Lee; Hyunsang Hwang / IEEE Journal of the Electron Devices Society 9, pp. 864-867 (202109)​

Hybrid memory characteristics of NbOx threshold switching devices / Sangmin Lee, Hyunsang Hwang, Jiyong Woo​ / Applied Physics Letters​ 119(9),092102​ (202108) 

Towards an ideal high-κ HfO2-ZrO2-based dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang / Nanoscale 13(32), pp. 13631–13640 (202108)

Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels​ / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunjeong Kwak, Seyoung Kim, Hyunsang Hwang / Advanced Electronic Materials​ ​7(8),2100219 (202108) 

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2ferroelectric device / Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang and Hyunsang Hwang / Nanotechnology 32(31),315712 (202107)​

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee and Hyunsang Hwang / Nanotechnology 32(27),275201 (202107) 

Neural Network Training Acceleration With RRAM-Based Hybrid Synapses / Wooseok Choi, Myonghoon Kwak, Seyoung Kim and Hyunsang Hwang / Frontiers in Neuroscience 2021(15), 690418 (202106) 

Multinary data processing based on nonlinear synaptic devices / Myungjun Kim, Jae-Eun Lee, Chuljun Lee, Yubin Song, Geonhui Han, Jongseon Seo, Dong-Wook Kim, Young-Ho Seo, Hyunsang Hwang, Daeseok Lee​ / Journal of Electronic Materials 50(6),3471-3477​​​ (202106) 

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device ​​/ Sangmin Lee, Jangseop Lee, Myonghoon Kwak, Oleksandr Mosendz, Hyunsang Hwang / Applied Physics Letters ​118(21),212103 (202105) 

Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive Array-based Hardware Neural Networks / Wooseok Choi, Chuljun Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Seyoung Kim, Hyunsang Hwang / IEEE Electron Device Letters 42(5), pp. 763-766 (202105) 

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),2100142 (202105) 

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary / Alireza Kashir,  Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials Science 218(8),2000819 (202104) 

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices / Writam Banerjee,  Seong Hun Kim,  Seungwoo Lee,  Donghwa Lee,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(4),2100022 (202104)