Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering / Revannath Dnyandeo Nikam, Jongwon Lee, Kyumin Lee, Hyunsang Hwang  / Small, 19(40), 2302593 (202310) 

Defect Engineering of BTe Ovonic Threshold Switch (OTS) with Nitrogen Doping for Improved Electrical and Reliability Performance / Jangseop Lee; Sanghyun Ban; Tae Hoon Lee; Hyunsang Hwang / IEEE Electron Device Letters, 44(9), pp. 1468–1471 (202309) 

Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of Edge-AI Hardware / Dongmin Kim, Wooseok Choi, Jangseop Lee, Hyunsang Hwang / IEEE Electron Device Letters, 44(8), pp. 1372–1375 (202308) 

Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using Ion-Permeable Graphene Electrodes / Jongwon Lee; Revannath Dnyandeo Nikam; Dongmin Kim; Hyunsang Hwang / IEEE Transactions on Electron Devices, 70(7), pp. 3951–3957 (202307)

Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure / H Jang, A Kashir, S Oh, H Hwang / Nanotechnology 33 (39), 395205

Composition optimization of Hf_xZr_1-xO₂thin films to achieve the morphotrophic phase boundary for high- k dielectrics / Seungyeol Oh ; Hojung Jang; Hyunsang Hwang / Journal of Applied Physics, 133(15), 154102 (202304)

NbO₂selector device with Ge₂Sb₂Te₅thermal barrier for low off current (300 nA) and low power operation / Ohhyuk Kwon ; Jangseop Lee ; Kyumin Lee ; Wooseok Choi ; Hyunsang Hwang / Applied Physics Letters, 122(11), 113502 (202303)

Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array / Sanghyun Ban; Jangseop Lee; Taehoon Kim; Hyunsang Hwang / IEEE Transactions on Electron Devices, 70(3), pp. 1034-1041 (202303)

Novel High-Speed Ternary Logic Using Step-Shaped Threshold Switch / Junjong Lee, Seongjae Heo, Hyunsang Hwang, Rock-Hyun Baek / IEEE Electron Device Letters, 44(3), pp. 368-371 (202303) 

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy / Sunhyeong Lee, Seungwoo Lee, and Hyunsang Hwang / AIP Advances, 13(2), 025053 (202302)

Atomic Threshold Switch Based on All-2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility / Revannath Dnyandeo Nikam and Hyunsang Hwang / Advanced Functional Materials 32(29) 2201749 (202207) 

Nonvolatile Frequency-Programmable Oscillator with NbO2 and Li-based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System / Donguk Lee, Jongwon Lee, Sangmin Lee,. Chuljun Lee, Sungjae Heo, Hyunsang Hwang / IEEE Electron Device Letters 43(7), pp. 1041-1044 (202207) 

Linear Frequency Modulation of NbO2-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network / Donguk Lee, Myonghoon Kwak, Jongwon Lee, Jiyong Woo and Hyunsang Hwang / Frontiers in Neuroscience 2022(16), 939687 (202206)

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications / Seungwoo Lee, Seong Hun Kim,Seungyeol Oh,Donghwa Lee,Hyunsang Hwang / Advanced Electronic Materials 8(5), 2101257 (202205)​

A grease for domain walls motion in HfO2-based ferroelectrics​ / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, Hyunsang Hwang, Stanislav Kamba​ / Nanotechnology​ 33(15),155703​ (202204) 

Improved Synaptic Characteristics of Oxide-Based Electrochemical Random Access Memory at Elevated Temperatures Using Integrated Micro-Heater / Jongwon Le,; Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / IEEE Transactions on Electron Devices 69(4), pp. 2218-2221 (202204)​

Effect of Silicon Doping in B–Te (B4Te6) Binary Ovonic Threshold Switch System / Sanghyun Ban, Sangmin Lee, Jangseop Lee, and Hyunsang Hwang / IEEE Electron Device Letters 43(4), pp. 643-646 (202204) 

Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters Optimization / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, and Hyunsang Hwang / ACS Applied Materials and Interfaces 14(11), pp. 13450-13457 (202203)​

Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf_0.5Zr_0.5O₂/TiN device / Hyungwoo Kim, Alireza Kashir, Hojung Jang, Seungyeol Oh, Manoj Yadav, Seungwoo Lee and Hyunsang Hwang / Nano Express 3(1),015004 (202203) 

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device ​/ Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang​ / Nanotechnology 32(31),315712 (202105)​