Semiconductor Integrated Device & Process Lab.


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Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride / Revannath Dnyandeo Nikam,  Krishn Gopal Rajput,  Hyunsang Hwang / Small 2021, 17(7) 2006760 (202102) 


Li memristor-based MOSFET synapse for linear I-V characteristic and processing analog input neuromorphic system / Chuljun Lee, Jae-Eun Lee, Myungjun Kim, Yubin Song, Geonhui Han, Jongseon Seo, Dong-Wook Kim, Young-Ho Seo, Hyunsang Hwang and Daeseok Lee / Japanese Journal of Applied Physics 2021, 60(2), 024003 (202102) 


Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic-Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer / Seungwoo Lee,  Writam Banerjee,  Sangmin Lee,  Changhyuck Sung,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(2), 2000869 (202102) 


A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices / Hyungwoo Kim, Alireza Kashir, Seungyeol Oh and Hyunsang Hwang / Nanotechnology 2021, 32(5), 055703 (202101) 


Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer /  Jangseop Lee,  Sangmin Lee, and  Hyunsang Hwang / Applied Physics Letters 2021, 118(2), 022103 (202101) 


Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks / Soeun Jin, Donguk Lee, Myonghoon Kwak, Ah Ra Kim, Hyunsang Hwang, Hyuknyeong Cheon, Jung-Dae Kwon, Yonghun Kim / Physica Status Solidi (A) Applications and Materials Science 218(2),2000534 (202101) 


Defect Engineering to Achieve Wake-up Free HfO2-Based Ferroelectrics / Alireza Kashir, Seungyeol Oh, and Hyunsang Hwang / Advanced Engineering Materials 2021, 23(1), 2000791 (202101) 


Effect of dead layers on the ferroelectric property of ultrathin HfZrOxfilm /  Seungyeol Oh,  Hyungwoo Kim,  Alireza Kashir, and  Hyunsang Hwang / Applied Physics Letters 2020, 117(25), 252906 (202012) 


Sodium-based nano-ionic synaptic transistor with improved retention characteristics / Kyumin Lee, Jongwon Lee, Revannath Dnyandeo Nikam, Seongjae Heo and Hyunsang Hwang /  Nanotechnology 31(45), pp. 455204 (202011)​


Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer / Hokyeong Jeong, Jiye Kim, Dong Yeong Kim, Jaewon Kim, Seokho Moon, Odongo Francis Ngome Okello, Sangmin Lee, Hyunsang Hwang, Si-Young Choi, and Jong Kyu Kim / ACS APPLIED MATERIALS & INTERFACES 2020, 12(41), pp. 46288-46295 (202010) 


Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing / Chuljun Lee , Krishn Gopal Rajput, Wooseok Choi , Myonghoon Kwak , Revannath Dnyandeo Nikam, Seyoung Kim , Hyunsang Hwang / IEEE Electron Device Letters 2020, 41(10), pp. 1500-1503, 9178786 (202010) 


Analysis of bending behavior of TiN particle-reinforced martensitic steel using micro-digital image correlation / Dong Hyuk Kim, Yujin Seong, Jung Gi Kim, Jongwon Lee, Min Hong Seo, Hyunsang Hwang, Hyoung Seop Kim / Materials Science and Engineering A 2020, 794, 139965 (202009) 


Understanding of Selector-Less 1S1R Type Cu-Based CBRAM Devices by Controlling Sub-Quantum Filament / Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 6(9),2000488 (202009) 


Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-based Fuse Device / Myonghoon Kwak, Sangmin Lee, Seyoung Kim, Hyunsang Hwang / IEEE Electron Device Letters 41(9),9139301, pp. 1436-1439 (202009) 


WOx-Based Synapse Device with Excellent Conductance Uniformity for Hardware Neural Networks / Wooseok Choi , Sang-Gyun Gi , Donguk Lee, Seokjae Lim , Chuljun Lee, Byung-Geun Lee , Hyunsang Hwang / IEEE Transactions on Nanotechnology 19,9143509, pp. 594-600 (202007) 


Understanding of the Abrupt Resistive Transition in Different types of Threshold Switching Devices from Materials Perspective / Sangmin Lee , Jongmyung Yoo , Jaehyuk Park , Hyunsang Hwang / IEEE Transactions on Electron Devices 67(7),9115221, pp. 2878-2883 (202007) 


Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device ​/ Changhyuck Sung, Seokjae Lim, Hyunsang Hwang / IEEE Electron Device Letters 41(5),9027923, pp. 713-716​ (202005)


Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity / Jongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, Myonghoon Kwak, Hyunsang Hwang ​/ Nanotechnology 31(23), pp. 235203 (202003)


Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, Krishn Gopal Rajput, Hyunsang Hwang ​/ Advanced Electronic Materials6(2),1901100​ (202002)


Engineering of defects in resistive random access memory devices /  Writam Banerjee,  Qi Liu, and  Hyunsang Hwang / Journal of Applied Physics 127(5),051101 (202002)