Introduction of WO₃ Layer in a Cu-based Al₂O₃ Conductive Bridge RAM System for Robust Cycling and Large Memory Window / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Journal of the Electron Devices Society  4 (3), 7400894, pp. 163-166 (201605)

 

Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO₂ Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)

 

Comprehensive scaling study of NbO₂ insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)

 

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602) 

Communication—Impact of Filament Instability in an Ag₂S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)

 

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)

A study of threshold switching of NbO₂ using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)

B12-O-07Self-relaxed conductive filament in ReRAM analyzed by in-situ TEM and Atom Probe Tomography / BG Chae, KJ Baek, JH Song, HS Hwang, SH Oh, JB Seol, CG Park / Microscopy 64(suppl 1), i22-i22 https://doi.org/10.1093/jmicro/dfv094 (2015.11) 

Switching mechanism of Al/La_1−xSr_xMnO₃ resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO₂-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)

Improved threshold switching characteristics of multi-layer NbO_x for 3-D selector application / Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Jaesung Park, Hyunsang Hwang / Microelectronic Engineering 147, pp. 318-320 (201511)

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element  / Geoffrey W. Burr, Robert M. Shelby, Severin Sidler, Carmelo di Nolfo, Junwoo Jang, Irem Boybat, Rohit S. Shenoy, Pritish Narayanan, Kumar Virwani, Emanuele U. Giacometti, Bülent N. Kurdi, and Hyunsang Hwang, /  IEEE Transactions on Electron Devices 62(11), 3498-3507 (201511)

Bidirectional threshold switching in engineered multilayer (Cu₂O/Ag:Cu₂O/Cu₂O) stack for cross-point selector application / Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Applied Physics Letters 107 (11), 113504 (201509)

Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array / Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  36 (7) , 681-683 (201507) 

Resistance controllability and variability improvement in a TaO_x-based resistive memory for multilevel storage application / A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, and H. Hwang / Applied Physics Letters 106(23), 233104 (201506) 

Electronic system with memristive synapses for pattern recognition / Sangsu Park, Myonglae Chu, Jongin Kim, Jinwoo Noh, Moongu Jeon, Byoung Hun Lee, Hyunsang Hwang, Boreom Lee, Byung-geun Lee / Scientific Reports 5, 10123 (201505) 

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al₂O₃-Based CBRAM / Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash and Hyunsang Hwang / ECS Solid State Letters 4 (7), pp. Q25-Q28 (201505) 

​Optimization of Conductance Change in Pr_1−xCa_xMnO₃-Based Synaptic Devices for Neuromorphic Systems / Jun-Woo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, and Yoon-Ha Jeong / IEEE Electron Device Letters 36 (5), 7078840, pp. 457-459 (201505)

Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron / Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee / IEEE Transactions on Industrial Electronics 62 (4), 6894575, pp. 2410-2419 (201504)