Semiconductor Integrated Device & Process Lab.

Journals

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Journals

63
Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric / Musarrat Hasan, Hokyung Park, Joon-myong Lee, Hyunsang Hwang / Applied Physics Letters 91 (3), art. no. 033512 (2007.07.16)
62
Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing / Minseok Jo, Man Chang, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 46 (20-24), pp. L531-L533 (2007.06.15)
61
Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET / Minseok Jo, Hokyung Park, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, Hyunsang Hwang / Microelectronic Engineering 84 (9-10), pp. 1934-1937  (2007.09)
60
Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology / Musarrat Hasan, Hokyung Park, Joon-myong Lee, Minseak Jo, Hyunsang Hwang / Microelectronic Engineering 84 (9-10), pp. 2205-2208 (2007.09)
59
Improvement of memory properties for MANOS-engine nonvolatile memory devices with high-pressure wet vapor annealing / Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Sangmoo Choi / Microelectronic Engineering 84 (9-10), pp. 2002-2005 (2007.09)
58
Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory / Moonjae Kwon, Hyejung Choi, Man Chang, Minseok Jo, Seung-Jae Jung, Hyunsang Hwang / Applied Physics Letters 90 (19), art. no. 193512 (2007.05.07)
57
Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing / R. Dong, W. F. Xiang, D. S. Lee, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, M. Chang, M. Jo, M. Hasan, Hyunsang Hwang / Applied Physics Letters 90 (18), art. no. 182118 (2007.04.30)
56
Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy / Gunho Jo, Jongsun Maeng, Tae-Wook Kim, Woong-Ki Hong, Minseok Jo, Hyunsang Hwang, Takhee Lee / Applied Physics Letters 90 (17), art. no. 173106 (2007.04.23)
55
HPHA Effect on Reversible Resistive Switching of Pt/Nb-Doped SrTiO3 Schottky Junction for Nonvolatile Memory Application / Dong-jun Seong, Minseok Jo, Dongsoo Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 10 (6), pp. 168-170 (2007.06)
54
Structural and Electrical Properties of Epitaxial Nb-Doped SrTiO3 Film Deposited on Si  (100) Substrate / Wenfeng Xiang, Seokjoon Oh, Hyejung Choi, Rui Dong, Dongsoo Lee, Dongjun Seong, and Hyunsang Hwang / Journal of the Electrochemical Society 154 (6), pp. H517-H520 (2007.06)
53
Resistance switching of copper doped MoOx films for nonvolatile memory applications / Dongsoo Lee, Dong-jun Seong, Inhwa Jo, F. Xiang, R. Dong, Seokjoon Oh, Hyunsang Hwang / Applied Physics Letters 90 (12), art. no. 122104 (2007.03.19)
52
Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application / Musarrat Hasan, Hokyung Park, Hyundoek Yang, Hyunsang Hwang, Hyung-Suk Jung, Jong-Ho Lee / Applied Physics Letters 90 (10), art. no. 103510 (2007.03.05)
51
Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications / Wenfeng Xiang, Rui Dong, Dongsoo Lee, Seokjoon Oh, Dongjun Seong, Hyunsang Hwang / Applied Physics Letters 90 (5), art. no. 052110 (2007.01.29)
50
Reproducible hysteresis and resistive switching in metal- Cux O -metal heterostructures / R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, Hyunsang Hwang / Applied Physics Letters 90 (4), art. no. 042107 (2007.01.22)
49
Effect of F2 postmetallization annealing on the electrical and reliability characteristics of HfSiO gate dielectric / Man Chang, Minseok Jo, Hokyung Park, Hyunsang Hwang, Byoung Hun Lee, Rino Choi / IEEE Electron Device Letters 28 (1), pp. 21-23 (2007.01)
48
Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO2 film / Cheljong Choi, Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Taeyoub Kim, Byoungchul Park, Seongjae Lee, Hyundoek Yang, Ranju Jung, Man Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (1), pp. 125-127 (2007.01.15)
47

Ultrashallow (<10 nm)p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing / Sungho Heo, Hyunsang Hwang, H. T. Cho, and W. A. Krull / Applied Physics Letters 89 (24), art. no. 243516 (2006.12.11)

46

Electrical characteristics of LaAlO3 gate dielectrics prepared by high-pressure hydrogen post-deposition annealing / Musarrat Hasan, Min Seok Jo, Md. Shahriar Rahman, Hyejong Choi, Sungho Heo, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (11), pp. F77-F79 (2006.11) 

45

Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliability / Taeho Lee, Han-Kyoung Ko, Jinho Ahn, In-Sung Park, Hyunjun Sim, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (9 A), pp. 6993-6995 (2006.09.07) 

44

Nano-scale memory characteristics of silicon nitride charge trapping layer with silicon nanocrystals / Hyejung Choi, Sangmoo Choi1, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (29-32), pp. L807-L809 (2006.08.11)