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Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary / Alireza Kashir,  Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials Science 218(8),2000819 (202104) 


An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices / Writam Banerjee,  Seong Hun Kim,  Seungwoo Lee,  Donghwa Lee,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(4),2100022 (202104) 


Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training / Myonghoon Kwak , Wooseok Choi , Seongjae Heo, Chuljun Lee , Revannath Nikam, Seyoung Kim , and Hyunsang Hwang / IEEE Electron Device Letters 2021, 42(4), pp. 609–612, 9350640 (202104) 


Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR-Based Neural Network Applications / Changhyuck Sung,  Seong Hun Kim,  Myounghoon Kwak,  Donghwa Lee,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(3), 2000881 (202103) 


Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering / Alireza Kashir, Hyungwoo Kim, Seungyeol Oh, and Hyunsang Hwang / ACS Applied Electronic Materials 3(2), pp. 629-638 (202102) 


Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride / Revannath Dnyandeo Nikam,  Krishn Gopal Rajput,  Hyunsang Hwang / Small 2021, 17(7) 2006760 (202102) 


Li memristor-based MOSFET synapse for linear I-V characteristic and processing analog input neuromorphic system / Chuljun Lee, Jae-Eun Lee, Myungjun Kim, Yubin Song, Geonhui Han, Jongseon Seo, Dong-Wook Kim, Young-Ho Seo, Hyunsang Hwang and Daeseok Lee / Japanese Journal of Applied Physics 2021, 60(2), 024003 (202102) 


Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic-Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer / Seungwoo Lee,  Writam Banerjee,  Sangmin Lee,  Changhyuck Sung,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(2), 2000869 (202102) 


A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices / Hyungwoo Kim, Alireza Kashir, Seungyeol Oh and Hyunsang Hwang / Nanotechnology 2021, 32(5), 055703 (202101) 


Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer /  Jangseop Lee,  Sangmin Lee, and  Hyunsang Hwang / Applied Physics Letters 2021, 118(2), 022103 (202101) 


Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks / Soeun Jin, Donguk Lee, Myonghoon Kwak, Ah Ra Kim, Hyunsang Hwang, Hyuknyeong Cheon, Jung-Dae Kwon, Yonghun Kim / Physica Status Solidi (A) Applications and Materials Science 218(2),2000534 (202101) 


Defect Engineering to Achieve Wake-up Free HfO2-Based Ferroelectrics / Alireza Kashir, Seungyeol Oh, and Hyunsang Hwang / Advanced Engineering Materials 2021, 23(1), 2000791 (202101) 

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