Semiconductor Integrated Device & Process Lab.

Journals

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Journals

83
High-quality ultrathin gate oxide prepared by oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Applied Physics Letters 74 (5), pp. 709-710 (1999.02.01)
82
Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 38 (2 A), pp. L99-L101 (1999.02.01)
81
Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation / Jihwan Park, Yun-Jun Huh, Hyunsang Hwang / Applied Physics Letters 74 (9), pp. 1248-1250 (1999.03.01)
80
Effect of statistical process variation of MOSFET on hot carrier lifetime / Hyojune Kim, Hyunsang Hwang / Solid-State Electronics 43 (5), pp. 989-991 (1999.05)
79
Hot carrier reliability characteristics of a bend-gate MOSFET  / Woosung Lee, Hyunsang Hwang / Solid-State Electronics 44 (6), pp. 1117-1119 (2000.06.01)
78
Electromigration-induced failure of GaN multi-quantum well light emitting diode / Hyunsoo Kim, Hyundoek Yang, Chul Huh, Sang-Woo Kim, Seong-Ju Park, Hyunsang Hwang / Electronics Letters 36 (10), pp. 908-910 (2000.05.11)
77
Hot carrier degradation for narrow width MOSFET with shallow trench isolation / Woosung Lee, Hyunsang Hwang / Microelectronics Reliability 40 (1), pp. 49-56 (2000.01.14)
76
Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ND3 / Hyungshin Kwon, Hyunsang Hwang  / Applied Physics Letters 76 (6), pp. 772-773 (2000.02.07)
75
Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric / Hyungsuk Jung, Kiju Im, Hyunsang Hwang, Dooyoung Yang / Applied Physics Letters 76 (24), pp. 3630-3631 (2000.06.12)
74
Characterization of sub-30 nm p+/n junction formed by plasma ion implantation / S. K. Baek, C. J. Choi, T.-Y. Seong, H. Hwang, H. K. Kim, D. W. Moon / Journal of the Electrochemical Society 147 (8), pp. 3091-3093 (2000.08)
73
Modeling of a GaN-based light-emitting diode for uniform current spreading / Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, Hyunsang Hwang / Applied Physics Letters, 77 (12), pp. 1903-1904 (2000.09.18)
72
Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5 / Hyungsuk Jung, Kiju Im, Dooyoung Yang, Hyunsang Hwang / IEEE Electron Device Letters, 21 (12), pp. 563-565 (2000.12)
71
Electrical characteristics of ultra-thin oxynitride gate dielectric prepared by reoxidation of thermal nitride in D2O / Hyungshin Kwon, Inseok Yeo, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters, 39 (4 A), pp. L273-L274 (2000.04.01)
70
Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Applied Surface Science 239 (1), pp. 101-108 (2004.12.15)
69
High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices / Sangmoo Choi, Man Jang, Hokyung Park, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim / Applied Physics Letters 85 (26), pp. 6415-6417 (2004.12.27)
68
Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyunsang Hwang / Materials Science and Engineering B: Solid-State Materials for Advanced Technology 114-115 (SPEC. ISS.), pp. 376-380 (2004.12)
67
Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-engine flash memory devices / Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Hyunsang Hwang / Applied Physics Letters 91 (19), art. no. 192111 (2007.11.05)
66
Improved Electrical Characteristics of Fully Depleted Ultrathin SOI MOSFETs Annealed in High-Pressure Hydrogen Ambient / Yunik Son, Man Chang, Hokyung Park, Md. Shahriar Rahman, Sungkwon Baek, Hyunsang Hwang / Electrochemical and Solid-State Letters 10 (11), pp. 324-326 (2007.11)
65
Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing / Hokyung Park, Rino Choi, Byoung Hun Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 46 (33-35), pp. L786-L788 (2007.09.07)
64
Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications / Hyejung Choi, Seung-Jae Jung, Hokyung Park, Joon-Myung Lee, Moonjae Kwon, Man Chang, Musarrat Hasan, Sangmoo Choi, Hyunsang Hwang / Applied Physics Letters 91 (5), art. no. 052905 (2007.07.30)