Neuromorphic computing using non-volatile memory / Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung Kim, Severin Sidler, Kumar Virwani, Masatoshi Ishii, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Irem Boybat, Manuel Le Gallo, Kibong Moon, Jiyoo Woo, Hyunsang Hwang, Yusuf Leblebici / Advances in Physics: X 2(1), pp. 89–124 (201701)

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO₂ RRAM Synapse for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Myounghoon Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Transactions on Electron Devices 63(12), pp.5064-5067 (201612) 

TiO_x-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing / Jaesung Park, Myunghoon Kwak, Kibong Moon, Jiyong Woo, Dongwook Lee, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (12), 7725546, pp. 1559-1562 (201612) 

Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices / B.-G. Chae, J.-B. Seol, J.-H. Song, W.-Y Jung, H. Hwang, and C.-G. Park, / Applied Physics Letters 109 (11), 112103 (201609) 

Analog Synapse Device with 5-bit MLC and Improved Data Retention for Neuromorphic System / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sang Ho Oh, and Hyunsang Hwang,/ IEEE Electron Device Letters 37 (8), 7497521, pp. 1067-1070 (201608) 

Improved Synaptic Behavior under Identical Pulses using AlO_x/HfO₂ Bilayer RRAM Array for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (8), 7496808, pp. 994-997 (201608)

Steep Slope Field-Effect Transistors with Ag/TiO₂-Based Threshold Switching Device / Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (7), pp. 932-934 (201607) 

Communication-hourglass-shaped metal-filament switching device with multi-layer (AlO_x/TiO₂) oxide electrolytes / Seokjae Lim, Jiyong Woo, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, / ECS Journal of Solid State Science and Technology 5 (9), pp. Q219-Q221 (201607) 

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory / Amit Prakash, Hyunsang Hwang / Physical Sciences Reviews 1(6) (201606) 

Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions / Jun-Woo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, Hyunsang Hwang, and Yoon-Ha Jeong, / IEEE Transactions on Electron Devices 63 (6), 7450157, pp. 2610-2613 (201606) 

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption / Wentao Xu, Sung-Yong Min, Hyunsang Hwang, and Tae-Woo Lee, / Science advances 2(6), 150132, pp.1-7 (201606) 

Dynamics of electroforming and electrically driven insulator-metal transition in NbO_x selector / Jaehyuk Park, Euijun Cha, Ilya Karpov, and Hyunsang Hwang / Applied Physics Letters 108 (23), 232101 (201606) 

Improved reset breakdown strength in a HfO_x-based resistive memory by introducing RuO_x oxygen diffusion barrier / Jaesung Park, Jiyong Woo, Amit Prakash, Sangheon Lee, Seokjae Lim and Hyunsang Hwang / AIP Advances 6(5), 055114 (201605)

Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM  / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Journal of Nanoscience and Nanotechnology 16(5), 4758-4761  (201605)

Introduction of WO₃ Layer in a Cu-based Al₂O₃ Conductive Bridge RAM System for Robust Cycling and Large Memory Window / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Journal of the Electron Devices Society  4 (3), 7400894, pp. 163-166 (201605)

 

Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO₂ Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)

 

Comprehensive scaling study of NbO₂ insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)

 

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602) 

Communication—Impact of Filament Instability in an Ag₂S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)