Semiconductor Integrated Device & Process Lab.

Conferences

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Conferences

11
Reliability characteristics of gate dielectric, Proceeding of Technical Symposium of SEMICON, p.73, Jan. 1995. (Invited talk)
10
Structural evaluation of CVD WSix and its effect on polycide line resistance, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 96, 1995
9
Fluorine induced reliability degradation of W-polycide gate CMOS device, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 102, 1995
8
Electrical characteristics of ultra short channel CMOS device for giga-bit DRAM applications, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 84, 1995
7
Effect of channeling of halo ion implantation on threshold voltage instability of MOSFETs, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 79, 1995
6
Anormalous temperature dependence of nMOSFET lifetime under hot electron stress, Proceeding of European Solid State Device Research Conference, p. 381, 1994
5
Universal behavior of hot-carrier degradation in LDD NMOSFETs, Proceeding of SSDM Tech Dig., p. 35, 1993.
4
Ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation in N2O for ULSI application, Materials Research Soc., Symposium Proceeding. vol. 224, p. 379, 1991.
3
High quality ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O, Proceeding of SSDM Tech Dig., p. 1155, 1990
2
Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O, H. Hwang et al., Proceeding of IEEE IEDM Tech Dig., p. 421, 1990.
1
1. NEMS-CMOS hybrid technology and its applications B.H.Lee, C.H.Cho, H.Hwang, S.K. Lim, S.Y. Lee, H.J. Hwang NANO Korea 2009, 20090826-20090828

2. Hybrid Complementary Logic Circuits from One-Dimensional Nanoscale Building BlocksElements with Adjustment of Operation Voltage Gunho Jo,1 Woong-Ki Hong,1,Jung Inn Sohn,2 Minseok Jo,1 Jiyong Shin,1 Mark E. Welland,2 Hyunsang Hwang,1 Kurt E. Geckeler,1 and Takhee Lee1*,  MRS (Materials Research Society) 2009 Fall  Meeting, 20091130-20091204

3. Logic Circuits from One-Dimensional Nanoscale Building Blocks with Adjustment of Operation Voltage Gunho Jo, Woong-Ki Hong, Jung Inn Sohn, Minseok Jo, Jiyong Shin, Mark E. Welland, Hyunsang Hwang, Kurt E. Geckeler, and Takhee Lee A3 Foresight Program Sub-10 nm Wires Summer School, 20090830-20090901

4. Hybrid Complementary Logic Circuits Based on SWNT and ZnO Nanowire FETs Gunho Jo, Woong-Ki Hong, Jung Inn Sohn, Minseok Jo, Jiyong Shin, Mark E. Welland, Hyunsang Hwang, Kurt E. Geckeler, and Takhee Lee The 11th Nanowire Research Society Meeting & Nano Korea 2009 Satellite Session“ Nanowires for Nano Convergence, 20090828

5. Effect of excimer laser annealing on ZnO nanowires  Jongsun Maeng, Sungho Heo, Gunho Jo, Minhyeok Choe, Seonghyun Kim,Hyunsang Hwang, and Takhee Lee 20th IC-ME&D (20th International Conference on Molecular Electronics and Devices), 20090522-20090523

6. One Transistor–One Resistor (1T-1R) Devices for Polymer Non-Volatile Memory Applications Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Gunuk Wang, Dong-Yu Kim, Hyunsang Hwang, and Takhee Lee 20th IC-ME&D (20th International Conference on Molecular Electronics and Devices), 20090522-20090523

7. Hybrid Complementary Logic Circuits Based on ZnO Nanowire and CNT FETs with Adjustment of Operation Voltage Gunho Jo, Woong-Ki Hong, Jung Inn Sohn, Minseok Jo, Jiyong Shin, Mark E. Welland, Hyunsang Hwang, Kurt E. Geckeler, and Takhee Lee 20th IC-ME&D (20th International Conference on Molecular Electronics and Devices), 20090522-20090523

8. The Electronic Properties of ZnO Nanowires under Different Environments and Diode Characteristics of Hybrid p-engine Organic/n-engine ZnO Nanostructures Jongsun Maeng, Minseok Jo, Seok-Ju Kang, Min-Ki Kwon, Gunho Jo, Minhyeok Choe, Tae-Wook Kim, Hyunsang Hwang, Dong-Yu Kim, Seong-Ju Park, and Takhee Lee MRS (Materials Research Society) 2009 Spring Meeting, 20090413-20090417

9. Electrical Characterization of ZnO Nanowire Field Effect Transistors with High-k Al2O3 Gate Dielectric Layers Minhyeok Choe, Gunho Jo, Jongsun Maeng, Soon-Shin Kwon, Minseok Jo, Woong-Ki Hong, Hyunsang Hwang and Takhee Lee A3 Foresight Program Sub-10 nm Wires Workshop, 20090223-20090225

10. Advanced Ti Impurity Trap Memory and Nanocrystal Memory with Uniform Co Bio-nanodot for Non-volatile Memory Application NANO KOREA 2009, 제7회 국제나노기술심포지엄, 20090826-20090828

11. Effect of Oxygen Migration and Interface Engineering on Resistance Switching Behavior of Reactive Metal/polycrystalline Perovskite Oxide Device for NVM Applications D. Seong, J. Park, N. Lee, M. Hasan, S. Jung, H. Choi, J. Lee, M. Jo, W. Lee, S. Park, & Hyunsang Hwang UT-Dallas MSE colloquium, 20090805

12. Resistive switching of Reactive Metal / Perovskite Oxide Interface for Non-volatile Memory Applications Dong-jun Seong, Musarrat Hasan, Jubong Park, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Minseok Jo, Wootae Lee 2009 International Electron Devices and Materials Symposia (IEDMS), 20091119-20091120

13. Resistive switching of Reactive Metal / Perovskite Oxide Interface for Non-volatile Memory Applications Hyunsang Hwang, 2009 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP(IIRW), 20091018-20091022

14. Effect of the conducting filament resistance on the retention property of resistive memory Jubong Park, El Mostafa Bourim, Minseok Jo, Dong-jun Seong, Joonmyoung Lee, Wootae Lee, Sangsu Park, Jungho Shin, and Hyunsang Hwang The 9th NAIST/GIST Joint Symposium on Advanced Materials, 20091118-20091119

15. Characterization of fast charge trapping sources in bias temperature instability in high-k MOSFET Minseok Jo, Man Chang, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Hyung-Suk Jung,  Rino Choi, and Hyunsang Hwang 40th IEEE Semiconductor Interface Specialists Conference(SISC 2009), 20091203-20091205

16. Effect of Filament Resistance on Retention Characteristics of ReRAM Jubong Park, Jaesik Yoon, Minseok Jo, Dong-jun Seong, Joonmyoung Lee, Wootae Lee, Jungho Shin, El Mostafa Bourim, and Hyunsang Hwang 40th IEEE Semiconductor Interface Specialists Conference(SISC 2009), 20091203-20091205

17. Effect of Oxygen Migration and Interface Engineering of Resistance Switching Behavior of Reactive Metal/Polycrystalline Pr0.7Ca0.3MnO3 Device for Nonvolatile Memory Applications Dong-jun Seong, Jubong Park, Nodo Lee, Musarrat Hasan, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Minseok Jo, Wootae Lee, Sangsu Park, Seonghyun Kim, Yun Hee Jang, Y.Lee, M. Sung, D. Kil, Y.Hwang, S. Chung, S. Hong, J. Roh, and Hyunsang Hwang 2009 IEEE International Electron Devices Meeting (2009 IEDM), 20091207-20091209

18. Resistive Switching Characteristics of Solution-processible TiOx Using Nano-scale Via-hole Structures Seungjae Jung, Tae-Wook Kim, Hyejung Choi, Jaemin Kong, Ju-Bong Park, Minseok Jo, Seonghyun Kim, Wootae Lee, Joonmyoung Lee, TakHee Lee, Kwanghee Lee, and Hyunsang Hwang The International Semiconductor Device Research Symposium (ISDRS 2009), 20091209-20091211

19. Reliable Resistive Switching Device Based on Bi-layers of ZrOx/HfOx Films Joonmyoung lee, Wootae Lee, Minseok Jo, Jubong Park, Dong-jun Seong, Seungjae Jung, Seonghyun Kim, Jungho Shin, Sangsu Park, and Hyunsang Hwang The International Semiconductor Device Research Symposium (ISDRS 2009), 20091209-20091211

20. Effect of High Pressure Hydrogen Anneling on Silicon Nanowire MOSFET Devices with Multi-channel Wires Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, and Hyunsang Hwang The International Semiconductor Device Research Symposium (ISDRS 2009), 20091209-20091211

21. Thermally Robust Nanocrystal Memory with Co Bionanodot Self-assembled Monolayer as a Charge Trap Medium on Ultrathin LaAlO3 Layer S. Jung, K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita and H. Hwang 2009 International Conference on Solid State Devices and Materials(SSDM 2009), 20091007-20091009

22. Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament J. Park, H. Choi, M. Jo, J. Lee, T. W. Kim, J. Yoon, D. J. Seong, W. Lee, M. Chang, J. Shin, T. Lee and H. Hwang 2009 International Conference on Solid State Devices and Materials(SSDM 2009), 20091007-20091009

23. Data retention characteristics of MANOS-engine flash memory device with different metal electrodes at various levels of charge injection Man Chang, Tae-Wook Kim, Joonmyoung Lee, Minseok Jo, Seonghyun Kim, Seungjae Jung, Hyejung Choi, Takhee Lee, Hyunsang Hwang *, 16th biannual conference of Insulating Films on Semiconductors, 20090629-20090701

24. Reliable Impurity Trap Memory with High Charge Trap Efficiency using Ultrathin SiO2 Impurity Host Layer for Nonvolatile Memory Application Seungjae Jung, Man Chang , Seonghyun Kim, Joonmyung Lee, Chunhum Cho, Choongman Lee, Hyunsang Hwang,*16th biannual conference of Insulating Films on Semiconductors, 20090629-20090701

25. Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang 16th biannual conference of Insulating Films on Semiconductors, 20090629-20090701

26. The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang 16th biannual conference of Insulating Films on Semiconductors, 20090629-20090701

27. Charge loss behavior of MANOS-engine Flash Memory Cell with different levels of charge injection Man Chang, Minseok Jo, Musarrat Hasan, Seonghyun Kim, Yongkyu Ju, Seungjae Jung, Hyejung Choi, and Hyunsang Hwang  2009 IEEE International Reliability Physics Symposium , 20090426-20090430