Semiconductor Integrated Device & Process Lab.

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Conferences

40
Electrical and Structural Characteristics of Zirconium Oxynitride Prepared by Nitridation of Zirconium Oxide, S. Jeon and H. Hwang, Electronic Materials Conference 2001.6
39
Electrical characteristics of thermally stable ZrOxNy by NH3 annealing of ZrO2, S. Jeon, C. Choi, T. Seong, and H. Hwang, Semiconductor Technology (ISTC 2001) 2001.5
38
TaOxNy gate dielectric for ULSI MOS device applications, H. Jung, K. Im, S. Jeon, D. Yang, and H. Hwang, Semiconductor Technology (ISTC 2001) 2001.5
37
High-k Metal Oxide/SiO2 Stack Gate Dielectric Prepared by Reaction of Metal with SiO2, Jeshik Shin and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 208, April, 2001.
36
Electrical characteristics of ZrO2 prepared by wet oxidation of Zr layer, Sanhun Jeon and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 210, April, 2001.
35
Electrical characteristics of thermally stable ZrOxNy, Sanhun Jeon and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 211, April, 2001.
34
TaOxNy/ZrSixOy stack gate dielectric for MOS device applications, Kiju Im and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 211, April, 2001.
33
A Comparative study of the thickness evaluation of ultrathin gate oxide using various techniques, H. Chang and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 218, April, 2001.
32
Effect of an oxidized Ni/Au p-contact on the performance of GaN/InGaN MQW-LED, H. Kim, S. Park and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 114, April, 2001.
31
Effect of a current spreading on the performance of GaN-based LED, H. Kim, S. Park and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 118, April, 2001.
30
High-k gate dielectric for sub-100nm CMOSFET, SEMICON Korea Technical Symposium 2001, January 2001
29
Ultra Shallow p+/n Junction Formed by Plasma Ion Implantation, Sungkweon Baek, Chel-Jong Choi, Tae-Yeon Seong, and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 53, April, 2000.
28
Electrical Characteristics of TaOxNy  for High-k MOS Gate Dielectric Applications, Kiju Im, Hyungsuk Jung, Sanghun Jeon, Dooyoung Yang and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 69, April, 2000.
27
Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications, Hyungshin Kwon and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 70, April, 2000.
26
Reliability and Modeling of GaN-based Light Emitting Diode, H. Kim, J.-M. Lee, C. Huh, S.-W. Kim, D.-J. Kim, S-J. Park, and H. Hwang, Proceedings of the 58th Device Research Conference, p. 73-74, June, 2000.
25
High Quality Ultrathin TaOxNy Gate Dielectric Prepared by nitridation of Ta2O5, H. Jung, K. Im, S. Jeon, D. Yang, and H. Hwang, SSDM 2000, p. 236-237, Aug, 2000.
24
Effect of nitrogen plasma treatment on Mg-doped GaN and blue LED, S. W. Kim, C. Huh, J. M. Lee, H. Kim, H. M. Kim, H. Hwang, S. J. Park, Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp. 762-765, Nagoya, Japan, Sept. 24-27, 2000
23
Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation, W. Lee, S. Lee, T. Ahn, H. Hwang, IEEE International Reliability Physics Symposium, p. 259, 1999.
22
Electrical Characteristics of Ultra-thin Gate Oxide Prepared by Oxidation in D2O, Hyungshin Kwon and Hyunsang Hwang, European Solid State Device Research Conference,  Oct/1999
21
Ultrathin gate oxide prepared by oxidation in D2O for MOS device applications, Hyojune Kim and Hyunsang Hwang, 1999 MRS Symposium Proceeding, vol. 567, p.45-49, April/1999