Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application / Musarrat Hasan, Hokyung Park, Hyundoek Yang, Hyunsang Hwang, Hyung-Suk Jung, Jong-Ho Lee / Applied Physics Letters 90 (10), art. no. 103510 (2007.03.05)

Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications / Wenfeng Xiang, Rui Dong, Dongsoo Lee, Seokjoon Oh, Dongjun Seong, Hyunsang Hwang / Applied Physics Letters 90 (5), art. no. 052110 (2007.01.29)

Reproducible hysteresis and resistive switching in metal- Cux O -metal heterostructures / R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, Hyunsang Hwang / Applied Physics Letters 90 (4), art. no. 042107 (2007.01.22)

Effect of F2 postmetallization annealing on the electrical and reliability characteristics of HfSiO gate dielectric / Man Chang, Minseok Jo, Hokyung Park, Hyunsang Hwang, Byoung Hun Lee, Rino Choi / IEEE Electron Device Letters 28 (1), pp. 21-23 (2007.01)

Effective metal work function of high-pressure hydrogen postannealed Pt-Er alloy metal gate on HfO2 film / Cheljong Choi, Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Taeyoub Kim, Byoungchul Park, Seongjae Lee, Hyundoek Yang, Ranju Jung, Man Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (1), pp. 125-127 (2007.01.15)

Low programming voltage resistive switching in reactive metal/polycrystalline Pr_0.7Ca_0.3MnO₃ devices / Xinjun Liu, Kuyyadi P. Biju, El Mostafa Bourim, Sangsu Park, Wootae Lee, Jungho Shin, Hyunsang Hwang / Solid State Communications 150 (45-46), pp. 2231-2235

Resistive switching characteristics of solution-processed transparent TiO_x for nonvolatile memory application / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Journal of the Electrochemical Society 157 (11), pp. H1042-H1045

Reverse resistance switching in polycrystalline Nb₂O₅ films / Younghun Jo, Hyunjun Sim, Hyunsang Hwang, Ken Ahn, Myung-Hwa Jung / Thin Solid Films 518 (20), pp. 5676-5678 (2010.08.02)

Investigation of State Stability of Low Resistance State in Resistive Memory / Jubong Park, Minseok Jo, El Mostafa Bourim, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, and Hyunsang Hwang / IEEE Electron Device Letters 31(5), art. no. 5433005, pp. 485-487 (2010.05)

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant / Minseok Jo, Seonghyun Kim, Joonmyoung Lee, Seungjae Jung, Ju-Bong Park, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / Applied Physics Letters 96 (14), art. no. 142110 (2010.04.05)

Effect of Fast Components in Threshold Voltage Shift on Bias Temperature Instability in High-k MOSFETs / Minseok Jo, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / IEEE Electron Device Letters 31 (4), art. no. 13, pp. 287-289 (2010.04)

Rewritable switching of one diode-one resistor nonvolatile organic memory devices / Byungjin Cho, Tae-Wook Kim, Sunghoon Song, Yongsung Ji, Minseok Jo, Hyunsang Hwang, Gun-Young Jung, Takhee Lee / Advanced Materials 22 (11), pp. 1228-1232 (2010.03.19)

Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application / Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong-Hyun Ahn, Min-Seok Jo, and Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (3), pp. H80-H82 (2010.03)

Electrical properties of ZnO nanowire field effect transistors with varying high-k Al₂O₃ dielectric thickness / Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong-Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, and Takhee Lee / Journal of Applied Physics 107 (3), art. no. 034504 (2010.02.01)

Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices / M. Chang, H. Hwang, and S. Jeon  / Applied Physics Letters 96 (5), art. no. 052106 (2010.02.01)

Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices / Tae-Wook Kim, Seung-Hwan Oh, Joonmyoung Lee, Hyejung Choi, Gunuk Wang, Jubong Park, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Organic Electronics: physics, materials, applications 11 (1), pp. 109-114 (2010.01)

Analysis of interface switching for Nb doped SrTiO₃ single crystal device using complex impedance spectroscopy / Joonmyoung Lee, El Mostafa Bourima, Dongku Shin, Jong-Sook Lee, Dong-jun Seong, Jubong Park, Wootae Lee, Man Chang, Seungjae Jung, Jungho Shin and Hyunsang Hwang, / Current Applied Physics 10 (1 SUPPL. 1), pp. e68-e70 (2010.01)

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO₃: Evidence for the origins of enhanced memory performance / Seungjae Jung, Hyejung Choi, Yongkyu Ju, Man Chang, Minseok Jo, Joonmyoung Lee, Jaesik Yoon, Choongman Lee, Hyunsang Hwang / Applied Physics Letters 95 (24), art. no. 242112 (200912) 

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET / Minseok Jo, Man Chang, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Dong-Jun Seong, Hyunsang Hwang / IEEE Electron Device Letters 30 (11), pp. 1194-1196 (200911) 

Device Performance and Reliability Characteristics of Tantalum-Silicon-Nitride Electrode/Hafnium Oxide n-engine Metal-Oxide-Semiconductor Field-Effect Transistor Depending on Electrode Composition / Hokyung Park , Man Chang, Minseok Jo, Rino Choi, Byoung Hun Lee, Hyunsang Hwang / Japanese Journal of Applied Physics 48 (11), 116506 (200911)