Semiconductor Integrated Device & Process Lab.

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Journals

23
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5 / Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan B. Samantaray, Hyunsang Hwang / Microelectronic Engineering 80 (SUPPL.), pp. 260-263 (2005.06.17)
22
Effects of low-temperature postannealing on a n+ -p shallow junction fabricated by plasma doping / Kiju Im, Sungkweon Baek, Hyunsang Hwang, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, and Won-ju Cho / Applied Physics Letters 86 (19), art. no. 193503, pp. 1-3 (2005.05.09)
21
Resistance-switching Characteristics of polycrystalline Nb2O5 for nonvolatile memory application / Hyunjun Sim, Dooho Choi, Dongsoo Lee, Sunae Seo, Myong-Jae Lee, In-Kyeong Yoo, Hyunsang Hwang / IEEE Electron Device Letters 26 (5), pp. 292-294 (2005.05)
20
Effects of high-pressure deuterium annealing on nonvolatile memory device with silicon nanocrystals embedded in silicon nitride / Sangmoo Choi, Sungkweon Baek, Man Jang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim, Hyunsang Hwang / Journal of the Electrochemical Society 152 (5), pp. G345-G348 (2005.05)
19
Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices / Kiju Im, Won-ju Cho, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Sungkweon Baek, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (4 B), pp. 2376-2379 (2005.04)
18

Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications / Sangmoo Choi, Seok-Soon Kim, Man Chang, Hyunsang Hwang, Sanghun Jeon, Chungwoo Kim / Applied Physics Letters 86 (12), art. no. 123110, pp. 1-3 (2005.03.21)

17

First-principles study of electronic structure and electron energy-loss-spectroscopy (EELS) of transition-metal aluminates as high-k gate dielectrics / C.B. Samantaray, H. Sim, H. Hwang / Applied Surface Science 242 (1-2), pp. 121-128 (2005.03.31)

16
Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing / Sungkweon Baek, Sungho Heo, Haejung Choi, Hyunsang Hwang / IEEE Electron Device Letters 26 (3), pp. 157-159 (2005.03)
15
Ti gate compatible with atomic-layer-deposited HfO2 for n-engine metal-oxide-semiconductor devices / Hyundoek Yang, Yunik Son, Sungkwon Baek, Hyunsang Hwang, Hajin Lim, Hyung-Seok Jung / Applied Physics Letters 86 (9), art. no. 092107, pp. 1-3 (2005.02.28)
14
Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer /Jang-Gn Yun, Soon-Young Oh, Bin-Feng Huang, Hee-Hwan Ji, Yong-Goo Kim, Seong-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Hu, Jeong-Gun Lee, Sung-Kweon Baek, Hyun-Sang Hwang, Hi-Deok Lee / IEEE Electron Device Letters 26 (2), pp. 90-92 (2005.02)
13
Characteristics of heavily doped p+ / n ultrashallow junction prepared by plasma doping and laser annealing / Sungkweon Baek, Sungho Heo, Haejung Choi, and Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (1), pp. 257-261 (2005.01.21)
12

Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon / Applied Physics Letters 86 (3), art. no. 031906, pp. 1-3 (2005.01.17)

11

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Applied Physics Letters 86 (3), art. no. 032104, pp. 1-3 (2005.01.17)

10

Low-temperature-activated bismuth ion-implanted silicon n+/p junction / Shahram Ghanad Tavakoli, Sungkweon Baek and Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (1 A), pp. 141-142 (2005.01.11)

9
Effect of capacitance-voltage sweep on the flat-band voltage of metal-oxide-semiconductor device with high-k gate dielectric / Hyundoek Yang, Yunik Son, Hyejung Choi, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7), pp. L235-L237 (2005.01)
8

The HfSixOy interfacial layer effect on improving electrical characteristics of ultrathin high-k TiO2 gate dielectric / Hyunjun Sim, Chandan B. Samantaray, Hyunsang Hwang / Electrochemical and Solid-State Letters 8 (1), pp. F5-F7 (2005.01)​

7
Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer / Sangmoo Choi, Myungjun Cho, Chandan B. Samantaray, Sanghun Jeon, Chungwoo Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 43 (7 A), pp. L882-L884 (2004.07.01)
6
Effect of Low Temperature Annealing Prior to Laser Annealing of an Ultrashallow n+/p Junction / Taesung Jang, Sungkweon Baek, Hyunsang Hwang / Journal of the Electrochemical Society 149 (12), pp. G661-G663 (2002.12)
5
Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance–Voltage Analysis / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5974-5975 (2002.10.15)
4
Electrical and Reliability Characteristics of an Ultrathin TaOxNy Gate Dielectric Prepared by O3 Annealing / Hyungsuk Jung, Hyunjun Sim, Kiju Im, Dooyoung Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 A), pp. 2221-2222 (2001.04)