High-k gate dielectric for sub-100nm CMOSFET, SEMICON Korea Technical Symposium 2001, January 2001

Ultra Shallow p+/n Junction Formed by Plasma Ion Implantation, Sungkweon Baek, Chel-Jong Choi, Tae-Yeon Seong, and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 53, April, 2000.

Electrical Characteristics of TaOxNy  for High-k MOS Gate Dielectric Applications, Kiju Im, Hyungsuk Jung, Sanghun Jeon, Dooyoung Yang and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 69, April, 2000.

Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications, Hyungshin Kwon and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 70, April, 2000.

Reliability and Modeling of GaN-based Light Emitting Diode, H. Kim, J.-M. Lee, C. Huh, S.-W. Kim, D.-J. Kim, S-J. Park, and H. Hwang, Proceedings of the 58th Device Research Conference, p. 73-74, June, 2000.

High Quality Ultrathin TaOxNy Gate Dielectric Prepared by nitridation of Ta2O5, H. Jung, K. Im, S. Jeon, D. Yang, and H. Hwang, SSDM 2000, p. 236-237, Aug, 2000.

Effect of nitrogen plasma treatment on Mg-doped GaN and blue LED, S. W. Kim, C. Huh, J. M. Lee, H. Kim, H. M. Kim, H. Hwang, S. J. Park, Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp. 762-765, Nagoya, Japan, Sept. 24-27, 2000

Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation, W. Lee, S. Lee, T. Ahn, H. Hwang, IEEE International Reliability Physics Symposium, p. 259, 1999.

Electrical Characteristics of Ultra-thin Gate Oxide Prepared by Oxidation in D2O, Hyungshin Kwon and Hyunsang Hwang, European Solid State Device Research Conference,  Oct/1999

Ultrathin gate oxide prepared by oxidation in D2O for MOS device applications, Hyojune Kim and Hyunsang Hwang, 1999 MRS Symposium Proceeding, vol. 567, p.45-49, April/1999

Comparison of ultra-low-energy ion implantation of boron and BF2. Hyunsang Hwang, 1999 MRS Symposium Proceeding, vol. 568, p.71-75, April/1999

Characterization of Corner Induced Leakage Current in Shallow silicide n+/p junction, H. Lee, J. W. Jung, H. Hwang, K. Lee, Y. Lee and J. Hwang, International Conference on Solid State Device and Materials, Yokohama, Japan, p. 120, 1997.

Two-dimensional dopant delineation by selective chemical etching, Kwangki Choi, Tae-yeon Seong, Seonghoon Lee and Hyunsang Hwang, Proceeding of Material research society, vol. 490, Dec. 1997.

Characterization of Corner Induced Leakage Current in Shallow silicide n+/p junction, Proceeding of SSDM Tech Dig., Yokohama, Japan, p. 120, 1997.

Defect generation during epitaxial growth of CoSi2 on miniature sized (100) Si substrate and its effect on electrical properties, Materials Research Soc., Symposium Proceeding. vol. 402, p. 167, 1996.

Degradation of MOSFETs drive current due to halo ion implantation, H. Hwang et al., Proceeding of IEEE International Electron Device Meeting (IEDM), p.567, 1996.

Hot carrier reliability characteristics of ultra short channel CMOSFETs, Proceeding of European Solid State Device Research Conference, p. 234, 1996

Performance and reliability optimization of ultra short channel CMOS device for giga-bit DRAM applications, H. Hwang et al., IEEE International Electron Device Meeting (IEDM), p.435, 1995.

Impact of velocity saturation on nMOSFETs hot carrier reliability at elevated temperature, Proceeding of IEEE International Reliability Physics Symposium, p. 48, 1995.

Reliability characteristics of gate dielectric, Proceeding of Technical Symposium of SEMICON, p.73, Jan. 1995. (Invited talk)