Semiconductor Integrated Device & Process Lab.

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Journals

43

Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO2 gated nMOSFETs / Hokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, Chadwin D. Young, Gennadi Bersuker, Jack C. Lee, Hyunsang Hwang / IEEE Electron Device Letters 27 (8), pp. 662-664 (2006.08) 

42

Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film / Chel-Jong Choi, Moon-Gyu Jang, Yark-Yeon Kim, Myung-Sim Jeon, Byoung-Chul Park, Seong-Jae Lee, Ran-Ju Jung, Hyun-doek Yang, Man Chang, Hyun-sang Hwang / Electrochemical and Solid-State Letters 9 (7), pp. G228-G230 (2006.07) 

41

Impact of metal work function on memory properties of charge-trap Flash memory devices using Fowler-Nordheim P/E mode / Sanghun Jeon, Jeong Hee Han, Junghoon Lee, Sangmoo Choi, Hyunsang Hwang, Chungwoo Kim / IEEE Electron Device Letters 27 (6), pp. 486-488 (2006.06) 

40

ScNx gate on atomic layer deposited HfO2 and effect of high-pressure wet post deposition annealing / Hyundoek Yang, Dongsoo Lee, M. S. Rahman, M. Hasan, Hyung-Seok Jung, Hyunsang Hwang / IEEE Electron Device Letters 27 (6), pp. 435-438 (2006.06) 

39

Formation of a self-aligned hard mask using hydrogen silsesquioxane / Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Hyunsang Hwang, Won-ju Cho / Applied Physics Letters 88 (15), art. no. 153502 (2006.04.10) 

38

Sub-15 nm n+/p -Germanium shallow junction formed by PH3 plasma doping and excimer laser annealing / Sungho Heo, Sungkweon Baek, Dongkyu Lee, Musarrat Hasan, Hyungsuk Jung, Jongho Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. 136-137 (2006.04) 

37

Enhanced reliability and performance of high-k MOSFET by two-step annealing / M. Shahriar Rahman, Hokyung Park, Man Chang, Dongsoo Lee, Byoung Hun Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G127-G129 (2006.04)

36

Electrical characteristics of ultrashallow p+/n junction formed by BF3 plasma doping and two-step annealing process / Dongkyu Lee, Sungho Heo, Changhee Cho, G. H. Buh, Tai-su Park, Jongryeol Yoo, Yugyun Shin, and Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G121-G123 (2006.04) 

35

Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications / Dooho Choi, Dongsoo Lee, Hyunjun Sim, Man Chang, Hyunsang Hwang / Applied Physics Letters 88 (8) art. no. 082904 (2006.02.20) 

34

Effective work function of scandium nitride gate electrodes on SiO2 and HfO2 / Hyundoek Yang, Sungho Heo, Dongkyu Lee, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (1-3), pp. L83-L85 (2006.01.31) 

33

Ultrashallow p+/n junction prepared by low energy BF3 plasma doping and KrF excimer laser annealing / Dongkyu Lee, Sungkweon Baek, Sungho Heo, Changhee Cho, Gyoungho Buh, Taisu Park, Yugyun Shin, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (1), pp. G19-G21 (2006.01) 

32
High work-function metal gate and high-k dielectrics for charge trap flash memory device applications / Sanghun Jeon, Jeong Hee Han,Jung Hoon Lee, Sangmoo Choi, Hyunsang Hwang, Chungwoo Kim / IEEE Transactions on Electron Devices 52 (12), pp. 2654-2659 (2005.12)
31
Improved conductance method for determining interface trap density of metal-oxide-semiconductor device with high series resistance / Hyundoek Yang, Yunik Son, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 44 (46-49), pp. L1460-L1462 (2005.11)
30
Improved interface quality and charge-trapping characteristics of MOSFETs with high-k gate dielectric / Hokyung Park, M. Shahriar Rahman, Man Chang, Byoung Hun Lee, Rino Choi, Chadwin D. Young, Hyunsang Hwang / IEEE Electron Device Letters 26 (10), pp. 725-727 (2005.10)
29

Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications / Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, I. K. Yoo / IEEE Electron Device Letters 26 (10), pp. 719-721 (2005.10)

28
Electrical characteristics of metal-oxide-semiconductor device with Sc gate on atomic-layer-deposited HfO2 / Hyundoek Yang, Hokyung Park, Dongsoo Lee, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 44 (37-41), pp. L1275-L1277 (2005.09.30)
27

First-principles study of electronic structure and optical properties of barium strontium titanates (BaxSr1-xTiO3) / C.B. Samantaray, H. Sim, H. Hwang / Applied Surface Science 250 (1-4), pp. 146-151 (2005.08.31)

26
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations / C.B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Microelectronics Journal 36 (8), pp. 725-728 (2005.08)
25
Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices / Sangmoo Choi, Hyundeok Yang, Man Chang, Sungkweon Baek, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim / Applied Physics Letters 86 (25), art. no. 251901, pp. 1-3 (2005.06.20)
24
Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-engine nonvolatile memory devices / S. Choi, S.S. Kim, H. Yang, M. Chang, S. Jeon, C. Kim, D.Y. Kim, H. Hwang / Microelectronic Engineering 80 (SUPPL.), pp. 264-267 (2005.06.17)