Epitaxial SrTiO3 on Silicon with EOT of 5.4 for MOS Gate Dielectric Applications, S. Jeon, F. J. Walker, C. A. Billman, R. A. Mckee, and H. Hwang, Internation Electron Device Meeting (IEDM) 2002.12

Hygroscopic nature of lanthanide oxide (Ln2O3) and its effect on electrical properties of Ln2O3, S. Jeon, M. Cho, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM), pp. 744, 2002.9

Formation of shallow junction using spin coating SPD method for sub 0.1 micron SOI MOSFET, K. Im, W. J. Cho, S. Lee, S. Maeng, M. G. Jang, T. W. Kang, K. Park, and H. Hwang, Electronic Materials Conference, 2002.6

Electrical and materials characteristics of Pr2O3-SiO2, S. Jeon and H. Hwang, Electronic Materials Conference, 2002.6

High quality ZrO2 gate dielectric for SiGe MOS devices, S. Choi, S. Jeon, and H. Hwang, MRS Spring meeting, Symposium Proceeding 2002.4

High-k gate dielectric prepared by low temperature wet oxidation of ultrathin metal nitride, S. Choi, S. Jeon, and H. Hwang, MRS Spring meeting, Symposium Proceeding 2002.4

The influence of low temperature pre-annealing on the defect removal and the reduction of junction depth in excimer laser annealing, S. Baek, T. Jang, and H. Hwang, MRS Spring meeting, Symposium Proceeding, 2002.4

Excellent electrical characteristics of Lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and Lanthanide-doped oxide for MOS gate dielectric applications, S. Jeon, K. Im, H. Yang, H. Lee, H. Sim, S. Choi, T. Jang, and H. Hwang, Internation Electron Device Meeting (IEDM) 2001.12

Ultrathin nitride-nanolaminate (Al2O3/ZrO2/Al2O3) for gate dielectric application, S. Jeon, H. Yang, H. Chang, D. G. Park, K. Y. Lim, I. S. Yeo, H. Koh, H. W. Yeom, and H. Hwang,  Int. Conf. of Solid state device & Materials (SSDM), pp. 178, 2001

Effect of plasma nitridation on the conduction mechanism of Ta2O5 gate dielectric, W. H. Lee, K. Im, S. Jeon, and H. Hwang, Int. Conf. of Solid state device & Materials, pp. 418, 2001

Electrical and Structural Characteristics of Zirconium Oxynitride Prepared by Nitridation of Zirconium Oxide, S. Jeon and H. Hwang, Electronic Materials Conference 2001.6

Electrical characteristics of thermally stable ZrOxNy by NH3 annealing of ZrO2, S. Jeon, C. Choi, T. Seong, and H. Hwang, Semiconductor Technology (ISTC 2001) 2001.5

TaOxNy gate dielectric for ULSI MOS device applications, H. Jung, K. Im, S. Jeon, D. Yang, and H. Hwang, Semiconductor Technology (ISTC 2001) 2001.5

High-k Metal Oxide/SiO2 Stack Gate Dielectric Prepared by Reaction of Metal with SiO2, Jeshik Shin and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding, p. 208, April, 2001.

Electrical characteristics of ZrO2 prepared by wet oxidation of Zr layer, Sanhun Jeon and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 210, April, 2001.

Electrical characteristics of thermally stable ZrOxNy, Sanhun Jeon and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 211, April, 2001.

TaOxNy/ZrSixOy stack gate dielectric for MOS device applications, Kiju Im and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 211, April, 2001.

A Comparative study of the thickness evaluation of ultrathin gate oxide using various techniques, H. Chang and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 218, April, 2001.

Effect of an oxidized Ni/Au p-contact on the performance of GaN/InGaN MQW-LED, H. Kim, S. Park and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 114, April, 2001.

Effect of a current spreading on the performance of GaN-based LED, H. Kim, S. Park and H. Hwang, MRS Spring meeting, Symposium Proceeding, p. 118, April, 2001.