Semiconductor Integrated Device & Process Lab.

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Conferences

71
 High work-function metal gate and high-k dielectric for charge trap flash memory device applications, S. Jeon, J. H. Han, J. Lee, C. J. Choi, S. Choi, H. Hwang, and C. Kim, 2005 ESSDERC, pp. 325, Sep. 2005 (ETC, NO)
70
 Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric, H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young, H. Hwang, 43rd Annual International Reliability Physics Symposium, pp. 646-647, 2005.06 (CA, BK 21, System IC 2010)
69
The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND engine charge trap flash memroy devices, S. Jeon, J. H. Han, J. Lee, J. Hyun, J. H. Kim, Y. S. Jeong, H. S. Chae, S. D. Chae, M. K. Kim, J. W. Lee, S. Choi, M. Jang, H. Hwang, C. Kim, 63rd Annual Device Research Conference, pp. 39-40, 2005.06 (ETC, NO)
68
Reversible resistance switching of the non-stoichiometric ZrOx and SrTiOx for non-volatile memory applications, Dongsoo Lee, Dooho Choi, Hyejung Choi, Hyunjun Sim, Hyunsang Hwang, 63rd Annual Device Research Conference, pp. 45-46, 2005.06 (CA, National R&D project on NVM device by MOCIE)
67
Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process, M. S. Rahman, H. Park, M. Chang, R. Choi, B. H. Lee, Jack C. Lee, H. Hwang, 63rd Annual Device Research Conference, pp. 85-86, 2005.06 (CA, SEMATECH & AMRC project)
66
Hydrogen effect on ultra-shallow arsenic n+/p junction formed by AsH3 plasma doping (PLAD), S. Heo, S. Baek, D. Lee, G. Buh, Y. Sin, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 65-66, 2005.06 (CA, Samsung Electronics)
65
 N+/P Ultra-Shallow Junction with Low Energy Bismuth Ion-implantation at Low Temperature, D. Lee, S. Baek, S. G. Tavakoli, S. Heo, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 37-38, 2005.06 (CA, Samsung Electronics)
64
Al2O3 with Metal-Nitride Nanocrystals as a Charge Trapping Layer of MONOS-engine Nonvolatile Memory Devices, Sangmoo Choi, Seok-Soon Kim, Hyundeok Yang, Man Chang, Sanghun Jeon, Chungwoo Kim, Dong-Yu Kim, and Hyunsang Hwang, Insulating Films On Semiconductors, pp. 264-267, 2005.06 (CA, BK 21, TND)
63
Reproducible resistance switching characteristics of pulsed laser-deposited polycrystalline Nb2O5, Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan. B. Samantaray, Hyunsang Hwang, Insulating Films On Semiconductors, pp. 260-263, 2005.06 (CA, 0.1 Terabit NVM project)
62
Ti metal gate with appropriate workfunction for ALD-HfO2 NMOS devices, Hyundoek Yang, Sangmoo Choi, Sungho Huh, Hyunsang Hwang, 35th IEEE Semiconductor Interface Specialists Conference, Late News Poster #5, 2004.12 (CA, System IC 2010)
61
High pressure H2/D2 annealed SONOS nonvolatile memory devices, S. Choi, M. Jang, H. park, S. Jeon, J. Kim, C. Kim, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 652, 2004.9.
60
Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-based gate dielectrics, H. Park, B. Lee, M. Gardner, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 748, 2004.9.
59
Triple high-k stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS engine flash memory device applications, S. Jeon, S. Choi, H. Hwang, J. H. Han, H. Chae, S. D. Chae, J. H. Kim, M. K. Kim, Y. S. Jeong, Y. Park, S. Seo, J. W. Lee, and C. W. Kim, IEEE Conference on Nanotechnology, pp. 53, 2004.8.
58
The growth kinetics of HfO2 films on Si(100) grown by atomic-layer deposition using in-situ medium energy ion scattering, H. S. Chang, H. Hwang, M. H. Cho, and D. W. Moon, Materials Research Society, 2004.4.
57
Effect of high-pressure hydrogen annealing on non-volatile memory device with silicon QD embedded in SiN, S. Choi, C. Cho, H. Park, M. Chang, S. Jeon, C. Kim, S. Park, and H. Hwang, IEEE Si Nanoelectronics Workshop, pp. 105, 2004.6.
56
Low temperature activated Ga and Sb ion-implanted shallow junctions, S. G. Tavakoli, K. Lee, S. Baek and H. Hwang, Int. Workshop on Junction Technology, pp. 104, 2004. 3.
55
Characteristics of low-temperature preannealing effects on laser-annealed p+/n and n+/p ultra-shallow junctions, S. Baek, S. Heo, H. Choi and H. Hwang, Int. Workshop on Junction Technology, pp. 54, 2004. 3.
54
Effects of high pressure hydrogen and deuterium annealing on HfO2 gate dielectric, H. Park, H. Yang, H. Sim, C. B. Samantaray, H. Hwang, 34th IEEE Semiconductor Interface Specialists Conference, P24, 2003.12.04
53
Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient, H. Park, H. Yang, H. Sim and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) 2003. 9.
52
Excellent electrical characteristics of SONOS-engine flash memory with high-k dielectric as trapping and blocking layer, M. Cho, S. Choi, J. W. Kim and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) 2003. 9.