Semiconductor Integrated Device & Process Lab.

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Journals

63
High-quality ultrathin gate oxide prepared by oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Applied Physics Letters 74 (5), pp. 709-710 (1999.02.01)
62
Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D2O / Hyojune Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 38 (2 A), pp. L99-L101 (1999.02.01)
61
Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation / Jihwan Park, Yun-Jun Huh, Hyunsang Hwang / Applied Physics Letters 74 (9), pp. 1248-1250 (1999.03.01)
60
Effect of statistical process variation of MOSFET on hot carrier lifetime / Hyojune Kim, Hyunsang Hwang / Solid-State Electronics 43 (5), pp. 989-991 (1999.05)
59
Hot carrier reliability characteristics of a bend-gate MOSFET  / Woosung Lee, Hyunsang Hwang / Solid-State Electronics 44 (6), pp. 1117-1119 (2000.06.01)
58
Electromigration-induced failure of GaN multi-quantum well light emitting diode / Hyunsoo Kim, Hyundoek Yang, Chul Huh, Sang-Woo Kim, Seong-Ju Park, Hyunsang Hwang / Electronics Letters 36 (10), pp. 908-910 (2000.05.11)
57
Hot carrier degradation for narrow width MOSFET with shallow trench isolation / Woosung Lee, Hyunsang Hwang / Microelectronics Reliability 40 (1), pp. 49-56 (2000.01.14)
56
Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ND3 / Hyungshin Kwon, Hyunsang Hwang  / Applied Physics Letters 76 (6), pp. 772-773 (2000.02.07)
55
Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric / Hyungsuk Jung, Kiju Im, Hyunsang Hwang, Dooyoung Yang / Applied Physics Letters 76 (24), pp. 3630-3631 (2000.06.12)
54
Characterization of sub-30 nm p+/n junction formed by plasma ion implantation / S. K. Baek, C. J. Choi, T.-Y. Seong, H. Hwang, H. K. Kim, D. W. Moon / Journal of the Electrochemical Society 147 (8), pp. 3091-3093 (2000.08)
53
Modeling of a GaN-based light-emitting diode for uniform current spreading / Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, Hyunsang Hwang / Applied Physics Letters, 77 (12), pp. 1903-1904 (2000.09.18)
52
Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5 / Hyungsuk Jung, Kiju Im, Dooyoung Yang, Hyunsang Hwang / IEEE Electron Device Letters, 21 (12), pp. 563-565 (2000.12)
51
Electrical characteristics of ultra-thin oxynitride gate dielectric prepared by reoxidation of thermal nitride in D2O / Hyungshin Kwon, Inseok Yeo, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters, 39 (4 A), pp. L273-L274 (2000.04.01)
50
Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Applied Surface Science 239 (1), pp. 101-108 (2004.12.15)
49
High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices / Sangmoo Choi, Man Jang, Hokyung Park, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim / Applied Physics Letters 85 (26), pp. 6415-6417 (2004.12.27)
48
Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyunsang Hwang / Materials Science and Engineering B: Solid-State Materials for Advanced Technology 114-115 (SPEC. ISS.), pp. 376-380 (2004.12)
47

Ultrashallow (<10 nm)p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing / Sungho Heo, Hyunsang Hwang, H. T. Cho, and W. A. Krull / Applied Physics Letters 89 (24), art. no. 243516 (2006.12.11)

46

Electrical characteristics of LaAlO3 gate dielectrics prepared by high-pressure hydrogen post-deposition annealing / Musarrat Hasan, Min Seok Jo, Md. Shahriar Rahman, Hyejong Choi, Sungho Heo, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (11), pp. F77-F79 (2006.11) 

45

Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliability / Taeho Lee, Han-Kyoung Ko, Jinho Ahn, In-Sung Park, Hyunjun Sim, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (9 A), pp. 6993-6995 (2006.09.07) 

44

Nano-scale memory characteristics of silicon nitride charge trapping layer with silicon nanocrystals / Hyejung Choi, Sangmoo Choi1, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (29-32), pp. L807-L809 (2006.08.11)