Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111) / Hyunjun Sim, Chandan B. Samantaray, Taeho Lee, Hanwoong Yeom, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (12), pp. 7926-7928 (2004.12.15)

Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications / Hyungsuk Jung, Hyundoek Yang, Kiju Im, Hyunsang Hwang /
Applied Physics Letters 79 (26), pp. 4408-4410 (2001.12.24)

Electrical Characteristics of TiO2/ZrSixOy Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications / Hyunjun Sim, Sanghun Jeon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12), pp. 6803-6804 (2001.12)

Effects of N2O Plasma Surface Treatment on the Electrical and Ohmic Contact Properties of n-engine GaN / Hyunsoo Kim, Nae-Man Park, Ja-Soon Jang, Seong-Ju Park, Hyunsang Hwang / Electrochemical and Solid-State Letters 4 (11), pp. G104-G106 (2001.11)

Electrical characteristics of a Dy-doped HfO2 gate dielectric / Hyelan Lee, Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 79 (16), pp. 2615-2617 (2001.10.15)

Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors / Woohyung Lee, Jeshik Shin, Hyundoek Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A), pp. 5308-5309 (2001.09)

Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 / Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, Hyunsang Hwang / Applied Physics Letters 79 (2), pp. 245-247 (2001.07.09)

Effects of current spreading on the performance of GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 48 (6), pp. 1065-1069 (2001.06)

Asymmetric bipolar resistive switching in solution-processed Pt/TiO₂/W devices / Kuyyadi P Biju, XinJun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Hyunsang Hwang / Journal of Physics D: Applied Physics 43 (49), art. no. 495104 (2010.12.15)

Improved resistive switching properties of solution processed TiO₂ thin films / Kuyyadi P. Biju, Xinjun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Jubong Park,  Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (12), pp. H443-H446 (2010.12)

Three-Dimensional Integration of Organic Resistive Memory Devices / Sunghoon Song , Byungjin Cho , Tae-Wook Kim , Yongsung Ji , Minseok Jo ,Gunuk Wang , Minhyeok Choe , Yung Ho Kahng , Hyunsang Hwang , Takhee Lee / Advanced Materials 22 (44), pp. 5048-5052 (2010.11.24)

Effect of ZrO_x/HfO_x bilayer structure on switching uniformity and reliability in nonvolatile memory applications / Joonmyoung Lee, El Mostafa Bourim, Wootae Lee, Jubong Park, Minseok Jo, Seungjae Jung, Jungho Shin, Hyunsang Hwang / Applied Physics Letters 97 (17), art. no. 172105

Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications / Sanghun Jeon, Hyundoek Yang, Dae-Gyu Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (4 B), pp. 2390-2393 (2002.04)

Improved Reliability Characteristics of Ultrathin SiO2 Grown by Low Temperature Ozone Oxidation / Hyo Sik Chang, Sangmoo Choi, Dae Won Moon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5971-5973  (2002.10.15)

Design and fabrication of highly efficient GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 49 (10), pp. 1715-1722 (2002.10)

Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics / Hyunjun Sim, Hyunsang Hwang / Applied Physics Letters 81 (21), pp. 4038-4039 (2002.11.18)

Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics / Hyunjun Sim, Hyosik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (4 A), pp. 1596-1597 (2003.04.15)

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride / Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, Hyunsang Hwang, Seong-Ju Park, Suk-Ho Choi / Applied Physics Letters 83 (5), pp. 1014-1016 (2003.08.04)

Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 (5), pp. L5-L9 (2003.09)

Improved metal–oxide–nitride–oxide–silicon-engine flash device with high-k dielectrics for blocking layer / Sangmoo Choi, Myungjun Cho, Hyunsang Hwang, Jung Woo Kim / Journal of Applied Physics 94 (8), pp. 5408-5410 (2003.10.15)