Semiconductor Integrated Device & Process Lab.

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Dual-Metal-Gate Work Function by Controlling Metal Gate Thickness and Composition / Musarrat Hasan, Hokyong Park, Joon-Myoung Lee, and Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (5), pp. H124-H126 (2008.03.03)
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High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices / Sung-Man Cho, Jeong-Hyun Lee, Man Chang, Min-Seok Jo, Hyun-Sang Hwang, Jong-kon Lee, Sung-Bo Hwang, and Jong-Ho Lee/ IEEE Transactions on Device and Materials Reliability 8 (1), art. no. 4399958, pp. 153-158 (2008.03)
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Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor / Hokyung Park, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, and Hyunsang Hwang / Japanese Journal of Applied Physics 47 (1), pp. 136-138  (2008.01.18)
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The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices / Hokyung Park, Minseok Jo, Hyejung Choi, Musarrat Hasan, Rino Choi, Paul D. Kirsch, Chang Young Kang, Byoung Hun Lee, Tae-Wook Kim, Takhee Lee, and Hyunsang Hwang / IEEE Electron Device Letters 29 (1), pp. 54-56 (2008.01)
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