Investigation of the initial stage of growth of HfO₂ films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon / Applied Physics Letters 86 (3), art. no. 031906, pp. 1-3 (2005.01.17)

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Applied Physics Letters 86 (3), art. no. 032104, pp. 1-3 (2005.01.17)

Low-temperature-activated bismuth ion-implanted silicon n+/p junction / Shahram Ghanad Tavakoli, Sungkweon Baek and Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (1 A), pp. 141-142 (2005.01.11)

Effect of capacitance-voltage sweep on the flat-band voltage of metal-oxide-semiconductor device with high-k gate dielectric / Hyundoek Yang, Yunik Son, Hyejung Choi, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 44 (1-7), pp. L235-L237 (2005.01)

The HfSi_xO_y interfacial layer effect on improving electrical characteristics of ultrathin high-k TiO₂ gate dielectric / Hyunjun Sim, Chandan B. Samantaray, Hyunsang Hwang / Electrochemical and Solid-State Letters 8 (1), pp. F5-F7 (2005.01)​