Semiconductor Integrated Device & Process Lab.

Journals

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Journals

83
Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors / Woohyung Lee, Jeshik Shin, Hyundoek Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A), pp. 5308-5309 (2001.09)
82
Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 / Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, Hyunsang Hwang / Applied Physics Letters 79 (2), pp. 245-247 (2001.07.09)
81
Effects of current spreading on the performance of GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 48 (6), pp. 1065-1069 (2001.06)
80
Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications / Sanghun Jeon, Hyundoek Yang, Dae-Gyu Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (4 B), pp. 2390-2393 (2002.04)
79
Improved Reliability Characteristics of Ultrathin SiO2 Grown by Low Temperature Ozone Oxidation / Hyo Sik Chang, Sangmoo Choi, Dae Won Moon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5971-5973  (2002.10.15)
78
Design and fabrication of highly efficient GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 49 (10), pp. 1715-1722 (2002.10)
77
Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics / Hyunjun Sim, Hyunsang Hwang / Applied Physics Letters 81 (21), pp. 4038-4039 (2002.11.18)
76
Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics / Hyunjun Sim, Hyosik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (4 A), pp. 1596-1597 (2003.04.15)
75
Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride / Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, Hyunsang Hwang, Seong-Ju Park, Suk-Ho Choi / Applied Physics Letters 83 (5), pp. 1014-1016 (2003.08.04)
74
Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 (5), pp. L5-L9 (2003.09)
73
Improved metal–oxide–nitride–oxide–silicon-engine flash device with high-k dielectrics for blocking layer / Sangmoo Choi, Myungjun Cho, Hyunsang Hwang, Jung Woo Kim / Journal of Applied Physics 94 (8), pp. 5408-5410 (2003.10.15)
72
Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications / Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 81 (25), pp. 4856-4858 (2002.12.16)
71
Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001) / Hyo Sik Chang, Hyunsang Hwang, Mann-ho Cho, Hyun Kyung Kim, Dae Won Moon / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1), pp. 165-169 (2004.01)
70
Thermal stability and decomposition of the HfO2–Al2O3 laminate system / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon, Seok Joo Doh, Jong Ho Lee, Nae-In Lee / Applied Physics Letters 84 (1), pp. 28-30 (2004.01.05)
69
Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing / Kiju Im, Won-Ju Cho, Chang-Geun Ahn, Jong-Heon Yang, Jihun Oh, Seongjae Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (5 A), pp. 2438-2441 (2004.05.15)
68
Electrical and Physical Properties of HfO2 Deposited via ALD Using Hf(OtBu)4 and Ozone atop Al2O3 / H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, M.-H. Cho / Electrochemical and Solid-State Letters 7 (6), pp. F42-F44 (2004.06)
67
Electronic structures of high-k transition metal silicates: first-principles calculations / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Microelectronics Journal 35 (8), pp. 655-658 (2004.08)
66
Electronic structure and optical properties of barium strontium titanate (BaxSr1−xTiO3) using first-principles method / C.B. Samantaray, H. Sim, H. Hwang / Physica B: Condensed Matter 351 (1-2), pp. 158-162 (2004.08.15)
65
Ultrashallow p+/n Junction Formation by 0.5–1 keV Ion Implantation / Jihwan Park, Jeong-Youb Lee, Kilho Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 37 (11 SUPPL. B), pp. L1376-L1378 (1998.11.15)
64
Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide / Jihwan Park, Yun Jun Huh, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 37 (11 SUPPL. B), pp. L1347-L1349 (1998.11.15)