Semiconductor Integrated Device & Process Lab.

Journals

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Journals

413

A CMOS-compatible morphotropic phase boundary / Alireza Kashir, Hyunsang Hwang​ / Nanotechnology​ 32(44),445706​ (202110) 

412

Deep Insight into Steep-Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal-Ion Movement through Vacancy-Induced-Percolation Path: Quantum-Level Control of Hybrid-Filament / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, Hyunsang Hwang / Advanced Functional Materials​ 31(37),2104054​ (202109) 

411

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor / Chuljun Lee, Wooseok Choi, Myunghoon Kwak, Seyoung Kim, Hyunsang Hwang​ / Applied Physics Letters​ 119(10),103503​ (202109) 

410

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films ​/ Anupam Giri, Manish Kumar, Jaeseon Kim, Monalisa Pal, Writam Banerjee, Revannath Dnyandeo Nikam, Junghyeok Kwak, Minsik Kong, Seong Hun Kim, Kaliannan Thiyagarajan, Geonwoo Kim, Hyunsang Hwang, Hyun Hwi Lee, Donghwa Lee, Unyong Jeong​ / Advanced Materials​ 33(35),2102252​ (202109) 

409

Improved turn-off speed and uniformity of atomic threshold switch device by agse electrode and bipolar pulse forming / Seungyeol Oh; Seungwoo Lee; Hyunsang Hwang / IEEE Journal of the Electron Devices Society 9, pp. 864-867 (202109)​

408

Hybrid memory characteristics of NbOx threshold switching devices / Sangmin Lee, Hyunsang Hwang, Jiyong Woo​ / Applied Physics Letters​ 119(9),092102​ (202108) 

407

Towards an ideal high-κ HfO2-ZrO2-based dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang / Nanoscale 13(32), pp. 13631–13640 (202108)

406

Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels​ / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunjeong Kwak, Seyoung Kim, Hyunsang Hwang / Advanced Electronic Materials​ ​7(8),2100219 (202108) 

405

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2ferroelectric device / Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang and Hyunsang Hwang / Nanotechnology 32(31),315712 (202107)​

404

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee and Hyunsang Hwang / Nanotechnology 32(27),275201 (202107) 

403

Neural Network Training Acceleration With RRAM-Based Hybrid Synapses / Wooseok Choi, Myonghoon Kwak, Seyoung Kim and Hyunsang Hwang / Frontiers in Neuroscience 2021(15), 690418 (202106) 

402

Multinary data processing based on nonlinear synaptic devices / Myungjun Kim, Jae-Eun Lee, Chuljun Lee, Yubin Song, Geonhui Han, Jongseon Seo, Dong-Wook Kim, Young-Ho Seo, Hyunsang Hwang, Daeseok Lee​ / Journal of Electronic Materials 50(6),3471-3477​​​ (202106) 

401

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device ​​/ Sangmin Lee, Jangseop Lee, Myonghoon Kwak, Oleksandr Mosendz, Hyunsang Hwang / Applied Physics Letters ​118(21),212103 (202105) 

400

Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive Array-based Hardware Neural Networks / Wooseok Choi, Chuljun Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Seyoung Kim, Hyunsang Hwang / IEEE Electron Device Letters 42(5), pp. 763-766 (202105) 

399

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),2100142 (202105) 

398

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary / Alireza Kashir,  Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials Science 218(8),2000819 (202104) 

397

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices / Writam Banerjee,  Seong Hun Kim,  Seungwoo Lee,  Donghwa Lee,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(4),2100022 (202104) 

396

Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training / Myonghoon Kwak , Wooseok Choi , Seongjae Heo, Chuljun Lee , Revannath Nikam, Seyoung Kim , and Hyunsang Hwang / IEEE Electron Device Letters 2021, 42(4), pp. 609–612, 9350640 (202104) 

395

Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR-Based Neural Network Applications / Changhyuck Sung,  Seong Hun Kim,  Myounghoon Kwak,  Donghwa Lee,  Hyunsang Hwang / Advanced Electronic Materials 2021, 7(3), 2000881 (202103) 

394

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering / Alireza Kashir, Hyungwoo Kim, Seungyeol Oh, and Hyunsang Hwang / ACS Applied Electronic Materials 3(2), pp. 629-638 (202102)