Reversible resistance switching of the non-stoichiometric ZrOx and SrTiOx for non-volatile memory applications, Dongsoo Lee, Dooho Choi, Hyejung Choi, Hyunjun Sim, Hyunsang Hwang, 63rd Annual Device Research Conference, pp. 45-46, 2005.06 (CA, National R&D project on NVM device by MOCIE)

Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process, M. S. Rahman, H. Park, M. Chang, R. Choi, B. H. Lee, Jack C. Lee, H. Hwang, 63rd Annual Device Research Conference, pp. 85-86, 2005.06 (CA, SEMATECH & AMRC project)

Hydrogen effect on ultra-shallow arsenic n+/p junction formed by AsH3 plasma doping (PLAD), S. Heo, S. Baek, D. Lee, G. Buh, Y. Sin, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 65-66, 2005.06 (CA, Samsung Electronics)

 N+/P Ultra-Shallow Junction with Low Energy Bismuth Ion-implantation at Low Temperature, D. Lee, S. Baek, S. G. Tavakoli, S. Heo, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 37-38, 2005.06 (CA, Samsung Electronics)

Al2O3 with Metal-Nitride Nanocrystals as a Charge Trapping Layer of MONOS-engine Nonvolatile Memory Devices, Sangmoo Choi, Seok-Soon Kim, Hyundeok Yang, Man Chang, Sanghun Jeon, Chungwoo Kim, Dong-Yu Kim, and Hyunsang Hwang, Insulating Films On Semiconductors, pp. 264-267, 2005.06 (CA, BK 21, TND)

Reproducible resistance switching characteristics of pulsed laser-deposited polycrystalline Nb2O5, Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan. B. Samantaray, Hyunsang Hwang, Insulating Films On Semiconductors, pp. 260-263, 2005.06 (CA, 0.1 Terabit NVM project)