Semiconductor Integrated Device & Process Lab.

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Journals

184
Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions / Sungkweon Baek, Taesung Jang, Hyunsang Hwang / Applied Physics Letters 80 (13), pp. 2272 (2002.04.01)
183
Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal–oxide–semiconductor gate dielectric applications / Sanghun Jeon, Hyundoek Yang, Hyo Sik Chang, Dae-Gyu Park, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (3), pp. 1143-1145 (2002.05)
182
Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application / Hyo Sik Chang, Sanghun Jeon, Hyunsang Hwang, Dae Won Moon / Applied Physics Letters 80 (18), pp. 3385-3387 (2002.05.06)
181
Improved Extrapolation Method of Ultrathin Oxide Thickness Using C–V Characteristics of Metal-Oxide-Semiconductor Device / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 41 (5 B), pp. L549-L551 (2002.05.15)
180
Electrical Characteristics of ZrO2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications / Sangmoo Choi, Sanghun Jeon, Hyunsang Hwang, Young J. Song, Jung-Wook Lim, Kyu-Hwan Shim, Kyung Wan Park / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (8), pp. 5129-5130 (2002.08)
179
Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, Nae-Man Park / Applied Physics Letters 81 (7), pp. 1326 (2002.08.12)
178
Measurement of the physical and electrical thickness of ultrathin gate oxides / H. S. Chang, H. D. Yang, H. Hwang, H. M. Cho, H. J. Lee, D. W. Moon / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5), pp. 1836-1842 (2002.09)
177
High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon / Sangmoo Choi, Sanghun Jeon, Myungjun Cho, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 42 (2 A), pp. L102-L104 (2003.02.01)
176
Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications / Sanghun Jeon, Frederick J. Walker, Curtis A. Billman, Rodney A. McKee, Hyunsang Hwang / IEEE Electron Device Letters 24 (4), pp. 218-220 (2003.04)
175
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) / Sanghun Jeon, Hyunsang Hwang / Journal of Applied Physics 93 (10 1), pp. 6393-6395 (2003.05.15)
174
Antimony as a Proper Candidate for Low-Temperature Solid Phase Epitaxially Activated n+/p Junctions / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Electrochemical and Solid-State Letters 7 (10), pp. G216-G218 (2004.10)
173
Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111) / Hyunjun Sim, Chandan B. Samantaray, Taeho Lee, Hanwoong Yeom, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (12), pp. 7926-7928 (2004.12.15)
172
Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications / Hyungsuk Jung, Hyundoek Yang, Kiju Im, Hyunsang Hwang /
Applied Physics Letters 79 (26), pp. 4408-4410 (2001.12.24)
171
Electrical Characteristics of TiO2/ZrSixOy Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications / Hyunjun Sim, Sanghun Jeon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12), pp. 6803-6804 (2001.12)
170
Effects of N2O Plasma Surface Treatment on the Electrical and Ohmic Contact Properties of n-engine GaN / Hyunsoo Kim, Nae-Man Park, Ja-Soon Jang, Seong-Ju Park, Hyunsang Hwang / Electrochemical and Solid-State Letters 4 (11), pp. G104-G106 (2001.11)
169
Electrical characteristics of a Dy-doped HfO2 gate dielectric / Hyelan Lee, Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 79 (16), pp. 2615-2617 (2001.10.15)
168
Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors / Woohyung Lee, Jeshik Shin, Hyundoek Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A), pp. 5308-5309 (2001.09)
167

Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature / Wootae Lee, Minseok Jo, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Seungjae Jung, Jungho Shin, Daeseok Lee, Manzar Siddik, Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials 208 (1), pp. 202-205 (2011.01) 

166
Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 / Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, Hyunsang Hwang / Applied Physics Letters 79 (2), pp. 245-247 (2001.07.09)
165
Effects of current spreading on the performance of GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 48 (6), pp. 1065-1069 (2001.06)