Semiconductor Integrated Device & Process Lab.

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2

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time /  J. Park, D. Lee, J.M. Yoo and H. Hwang / 2017 IEEE International Electron Devices Meeting (IEDM) 

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Study on Insulator - metal transition characteristics of NbO2 for selector device / Jaehyuk Park, Euijun Cha and Hyunsang Hwang / Non-Volatile Memory Technology Symposium 2017(NVMTS 2017) 

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