NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (~2mV/dec) with ultra-low voltage operation and improved delay time /  J. Park, D. Lee, J.M. Yoo and H. Hwang / 2017 IEEE International Electron Devices Meeting (IEDM) 

Study on Insulator - metal transition characteristics of NbO2 for selector device / Jaehyuk Park, Euijun Cha and Hyunsang Hwang / Non-Volatile Memory Technology Symposium 2017(NVMTS 2017)