Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors / Jeonghwan Song, Jaehyuk Park, Kibong Moon, Jiyong Woo, Seokjae Lim, Jongmyung Yoo, Dongwook Lee, and Hyunsang Hwang / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 

Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang, / 2016 IEEE International Electron Devices Meeting (2016 IEDM) 

Full Chip Integration of 3-D Cross-Point ReRAM with Leakage-Compensating Write Driver and Disturbance-Aware Sense Amplifier / Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-moon Choi, Soon-chan Kwon, Ho-joon Kim, Hyun-suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-won Kwon, Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits 

Te-Based Amorphous Binary OTS Device with Excellent Selector Characteristics for X-point Memory  / Yunmo Koo, Kyungjoon Baek, and Hyunsang Hwang, / 2016 Symposia on VLSI Technology and Circuits