Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode / E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. Park, M. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H. Hwang, / 2013 IEEE International Electron Devices Meeting

Selector-less ReRAM with an Excellent Non-Linearity and Reliability by the Band-Gap Engineered Multi-Layer Titanium Oxide and Triangular Shaped AC Pulse / S. Lee, D. Lee, J. Woo, E. Cha, J. Song, J. Park, H. Hwang, / 2013 IEEE International Electron Devices Meeting

BEOL Compatible (300^oC) TiN/TiOx/Ta/TiN 3D nanoscale (~10nm) IMT Selector / D. Lee, J. Park, S. Park, J. Woo, K. Moon, E. Cha, S. Lee, J. Song, Y. Koo, H. Hwang, / 2013 IEEE International Electron Devices Meeting 

Neuromorphic Speech Systems Using Advanced ReRAM-Based Synapse / S. Park, A.M. Sheri, J. Kim, J. Noh, J.-W. Jang*, M. Jeon, B.-G. Lee, B.H. Lee, B.H. Lee, H. Hwang, / 2013 IEEE International Electron Devices Meeting

Multi-layer tunnel barrier (Ta2O5/TaO x/TiO2) engineering for bipolar RRAM selector applications  / Jiyong Woo, Wootae Lee, Sangsu Park, Seonghyun Kim, Daeseok Lee, Godeuni Choi, Euijun Cha, Ji hyun Lee, Woo young Jung, Chan gyung Park, and Hyunsang Hwang, / 2013 Symposia on VLSI Technology and Circuits